Počet záznamů: 1

Conjugated Silicon–Based Polymer Resists for Nanotechnologies: EB and UV Meditated Degradation Processes in Polysilanes

  1. 1.
    0341918 - UPT-D 2011 RIV JP eng J - Článek v odborném periodiku
    Schauer, F. - Schauer, Petr - Kuřitka, I. - Hua, B.
    Conjugated Silicon–Based Polymer Resists for Nanotechnologies: EB and UV Meditated Degradation Processes in Polysilanes.
    Materials Transactions. Roč. 51, č. 2 (2010), s. 197-201 ISSN 1345-9678
    Grant CEP: GA AV ČR IAA100100622
    Výzkumný záměr: CEZ:AV0Z20650511
    Klíčová slova: ultra violet degradability * polysilylenes * weak bond * conformation defect * nanorezists
    Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika
    Impakt faktor: 0.779, rok: 2010

    The comparison of the susceptibility of aryl-substituted polysilanes to the photodegradation by electron beam (EB) and UV radiation is examined on the prototypical material, poly[methyl(phenyl)silylene] (PMPSi). The main purpose of this paper is to compare the photoluminescence (PL) and cathodoluminescence (CL) after major degradation, predominantly in the long wavelength range of 400–600 nm, studying the disorder due to dangling bonds, conformational transformations and weak bonds created by the degradation process. The UV degradation was a completely reversible process, whereas the EB degradation process was only reversible, provided certain material specific level of degradation was not exceeded. This observation supports different paths and final states in both UV and EB degradations. The results serve for the optimization of polysilane nanoresists.
    Trvalý link: http://hdl.handle.net/11104/0184761