Počet záznamů: 1

Ultrasharp Si nanowires produced by plasma-enhanced chemical vapor deposition

  1. 1.
    0341570 - FZU-D 2011 RIV DE eng J - Článek v odborném periodiku
    Červenka, Jiří - Ledinský, Martin - Stuchlíková, The-Ha - Stuchlík, Jiří - Výborný, Zdeněk - Holovský, Jakub - Hruška, Karel - Fejfar, Antonín - Kočka, Jan
    Ultrasharp Si nanowires produced by plasma-enhanced chemical vapor deposition.
    Physica Status Solidi-Rapid Research Letters. Roč. 4, 1-2 (2010), s. 37-39 ISSN 1862-6254
    Grant CEP: GA MŠk(CZ) LC06040; GA AV ČR KAN400100701; GA MŠk LC510
    Výzkumný záměr: CEZ:AV0Z10100521
    Klíčová slova: nanowires * silicon * scanning electron microscopy * hemical vapor deposition * Raman spectroscopy
    Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
    Impakt faktor: 2.660, rok: 2010
    http://www3.interscience.wiley.com/cgi-bin/fulltext/123213957/HTMLSTART

    Conical silicon nanowires have been grown by gold nanoparticle catalyzed plasma-enhanced chemical vapor deposition. This method produces Si nanowires with a very fast growth rate (1 μm/min) and unique sharpness (< 10 nm). Raman spectroscopy has proved the presence of both crystalline and amorphous Si in the grown Si nanowire layer. The fast growth process of Si nanowires with dimensions below 10 nm holds promises in various applications in electronics, photovoltaics and atomic force microscopy.
    Trvalý link: http://hdl.handle.net/11104/0184509