Počet záznamů: 1

Inversion of conductivity type of III-V compound layers in experiments with LPE growth from rare-earth containing melts

  1. 1.
    0341232 - URE-Y 2010 RIV DE eng J - Článek v odborném periodiku
    Šrobár, Fedor - Procházková, Olga
    Inversion of conductivity type of III-V compound layers in experiments with LPE growth from rare-earth containing melts.
    Crystal Research and Technology. Roč. 44, č. 6 (2009), s. 597-602 ISSN 0232-1300
    Grant CEP: GA ČR GA102/09/1037; GA ČR GA102/06/0153
    Výzkumný záměr: CEZ:AV0Z20670512
    Klíčová slova: semiconductors
    Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
    Impakt faktor: 0.896, rok: 2009

    Rare-earth (RE) elements present in the growth melt of the LPE process are known to have a purifying effect on the grown layers of III-V compounds. The RE atoms exhibit high chemical affinity to shallow donors. The aim of this paper is to simulate the sometimes observed situation where the gradual gettering of donor impurity leads to an inversion of the electrical conductivity type of the grown layer from n to p. Usefulness of the approach is demonstrated by interpreting results of experimental work.
    Trvalý link: http://hdl.handle.net/11104/0184282