Microscopic mechanism of the noncrystalline anisotropic magnetoresistance in (Ga,Mn)As

0336033 - FZÚ 2010 RIV US eng J - Článek v odborném periodiku
Výborný, Karel - Kučera, Jan - Sinova, J. - Rushforth, A.W. - Gallagher, B. L. - Jungwirth, Tomáš
Microscopic mechanism of the noncrystalline anisotropic magnetoresistance in (Ga,Mn)As.
[Mikroskopický mechanizmus nekrystalické anizotropni magnetorezistence v GaMnAs.]
Physical Review. B. Roč. 80, č. 16 (2009), 165204/1-165204/8. ISSN 1098-0121
Grant CEP: GA AV ČR KJB100100802; GA AV ČR KAN400100652; GA ČR GEFON/06/E002
GRANT EU: European Commission(XE) 215368 - SemiSpinNet; European Commission(XE) 214499 - NAMASTE
Grant ostatní: AV ČR(CZ) AP0801
Program: Akademická prémie - Praemium Academiae
Výzkumný záměr: CEZ:AV0Z10100521
Klíčová slova: anisotropic magnetoresistance * diluted magnetic semiconductors
Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
Impakt faktor: 3.475, rok: 2009
http://arxiv.org/abs/0906.3151

Starting with a microscopic model based on the Kohn-Luttinger Hamiltonian and kinetic p-d exchange combined with Boltzmann formula for conductivity we identify the scattering from magnetic Mn combined with the strong spin-orbit interaction of the GaAs valence band as the dominant mechanism of the anisotropic magnetoresistance (AMR) in (Ga,Mn)As. This fact allows to construct a simple analytical model of the AMR consisting of two heavy-hole bands whose charge carriers are scattered on the impurity potential of the Mn atoms. The model predicts the correct sign of the AMR (resistivity parallel to magnetization is smaller than perpendicular to magnetization) and identifies its origin arising from the destructive interference between electric and magnetic part of the scattering potential of magnetic ionized Mn acceptors when the carriers move parallel to the magnetization.

Rozptyl na magnetických manganových nečistotách kombinovaný se silnou spin-orbitální interakcí je identifikován jako dominantní zdroj anizotropni magnetorezistence (AMR) v tomto materialu. Je predstaven jednoduchy analyticky model, ktery vysvetluje znamenko AMR v tomto materialu.
Trvalý link: http://hdl.handle.net/11104/0180362