Počet záznamů: 1

Profiling of N-type dopants in silicon structures

  1. 1.
    0335261 - UPT-D 2010 RIV AT eng C - Konferenční příspěvek (zahraniční konf.)
    Hovorka, Miloš - Mika, Filip - Frank, Luděk
    Profiling of N-type dopants in silicon structures.
    MC 2009 - Microscopy Conference: First Joint Meeting of Dreiländertagung and Multinational Conference on Microscopy. Graz: Verlag der Technischen Universität, 2009, Vol. 1: 181-182. ISBN 978-3-85125-062-6.
    [MC 2009 - Joint Meeting of Dreiländertagung and Multinational Congress on Microscopy /9./. Graz (AT), 30.08.2009-04.09.2009]
    Grant CEP: GA ČR GP102/09/P543; GA AV ČR IAA100650803
    Výzkumný záměr: CEZ:AV0Z20650511
    Klíčová slova: silicon * dopants * PEEM * SEM
    Kód oboru RIV: JA - Elektronika a optoelektronika, elektrotechnika
    http://www.univie.ac.at/asem/Graz_MC_09/papers/19923.pdf http://www.univie.ac.at/asem/Graz_MC_09/papers/19923.pdf

    Among the dopant profiling techniques the scanning electron microscopy (SEM) reached position of a well established method which offers a high spatial resolution and good sensitivity to dopant concentration. Differently doped areas exhibit a contrast depending on the dopant level and surface conditions. Photoemission electron microscopy (PEEM) is a surface-sensitive alternative providing a high sensitivity to the dopant density. Both methods have already been successfully applied in imaging and characterization of the doped silicon structures.
    Trvalý link: http://hdl.handle.net/11104/0179772