Počet záznamů: 1

Homogenization of CZ Si wafers by Tabula Rasa annealing

  1. 1.
    0332842 - UFM-A 2010 RIV NL eng J - Článek v odborném periodiku
    Meduňa, M. - Caha, O. - Kuběna, J. - Kuběna, A. - Buršík, Jiří
    Homogenization of CZ Si wafers by Tabula Rasa annealing.
    Physica. B. Roč. 404, - (2009), s. 4637-4640 ISSN 0921-4526
    Grant CEP: GA ČR(CZ) GA202/09/1013
    Výzkumný záměr: CEZ:AV0Z20410507
    Klíčová slova: silicon * interstitial oxygen * oxygen precipitates
    Kód oboru RIV: BM - Fyzika pevných látek a magnetismus
    Impakt faktor: 1.056, rok: 2009

    The precipitation of interstitial oxygen in Czochralski grown silicon has been investigated by infrared absorption spectroscopy, chemical etching, TEM and X-ray diffraction after application of homogenization annealing process called Tabula Rasa.
    Trvalý link: http://hdl.handle.net/11104/0177972