Search results

  1. 1.
    0385913 - FZÚ 2013 RIV CZ eng J - Journal Article
    Šimek, P. - Šofer, Z. - Sedmidubský, D. - Jankovský, O. - Hejtmánek, Jiří - Maryško, Miroslav - Václavů, M. - Mikulics, M.
    Mn doping of GaN layers grown by MOVPE.
    Ceramics - Silikáty. Roč. 56, č. 2 (2012), s. 122-126. ISSN 0862-5468. E-ISSN 1804-5847
    R&D Projects: GA ČR GA104/09/0621
    Institutional research plan: CEZ:AV0Z10100521
    Keywords : metalorganic vapor phase epitaxy * nitrides * magnetic materials * semiconducting III-V materials
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Impact factor: 0.418, year: 2012
    Permanent Link: http://hdl.handle.net/11104/0215069
     
     
  2. 2.
    0373041 - FZÚ 2012 US eng A - Abstract
    Hospodková, Alice - Hulicius, Eduard - Oswald, Jiří - Pangrác, Jiří - Hazdra, P. - Caha, O. - Vyskočil, Jan - Kuldová, Karla
    InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots.
    The 14th US Biennial Workshop on Organometallic Vapor Phase Epitaxy. 2009 Abstract Book. Warren: American Association for Crystal Growth, 2009. s. 68. ISBN N.
    [US Biennial Workshop on Organometallic Vapor Phase Epitaxy /14./. 09.08.2009-14.08.2009, Lake Geneva, Wisconsin]
    R&D Projects: GA ČR GA202/09/0676
    Keywords : low dimensional structures * photoluminescence * low-pressure MOVPE * InAs/GaAs quantum dots * semiconducting III/V materials
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Permanent Link: http://hdl.handle.net/11104/0006873
     
     
  3. 3.
    0371379 - FZÚ 2012 RIV NL eng J - Journal Article
    Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří - Hazdra, P. - Kuldová, Karla - Vyskočil, Jan - Hulicius, Eduard
    Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures.
    Journal of Crystal Growth. Roč. 315, č. 1 (2011), 110-113. ISSN 0022-0248. E-ISSN 1873-5002
    R&D Projects: GA ČR GAP102/10/1201; GA MŠk LC510; GA ČR GA202/09/0676
    Institutional research plan: CEZ:AV0Z10100521
    Keywords : low dimensional structures * photoluminescence * electroluminescence * low-pressure MOVPE * InAs/GaAs quantum dots * semiconducting III–V materials
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Impact factor: 1.726, year: 2011
    Permanent Link: http://hdl.handle.net/11104/0204912
     
     
  4. 4.
    0359526 - FZÚ 2012 RIV NL eng J - Journal Article
    Hospodková, Alice - Pangrác, Jiří - Vyskočil, Jan - Oswald, Jiří - Vetushka, Aliaksi - Caha, O. - Hazdra, P. - Kuldová, Karla - Hulicius, Eduard
    InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime.
    Journal of Crystal Growth. Roč. 317, č. 1 (2011), s. 39-42. ISSN 0022-0248. E-ISSN 1873-5002
    R&D Projects: GA ČR GAP102/10/1201; GA ČR GAP108/10/0253; GA MŠk LC510; GA ČR GA202/09/0676
    Institutional research plan: CEZ:AV0Z10100521
    Keywords : low dimensional structures * photoluminescence * low-pressure MOVPE * InAs/GaAs quantum dots * semiconducting III–V materials
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Impact factor: 1.726, year: 2011
    Permanent Link: http://hdl.handle.net/11104/0197302
     
     
  5. 5.
    0342440 - FZÚ 2011 RIV NL eng J - Journal Article
    Hospodková, Alice - Hulicius, Eduard - Pangrác, Jiří - Oswald, Jiří - Vyskočil, Jan - Kuldová, Karla - Šimeček, Tomislav - Hazdra, P. - Caha, O.
    InGaAs and GaAsSb strain reducing layers covering InAs/GaAs quantum dots.
    Journal of Crystal Growth. Roč. 312, č. 8 (2010), 1383-1387. ISSN 0022-0248. E-ISSN 1873-5002
    R&D Projects: GA AV ČR IAA100100719; GA ČR GA202/09/0676; GA MŠk LC510
    Institutional research plan: CEZ:AV0Z10100521
    Keywords : low dimensional structures * photoluminescence * low-pressure MOVPE * InAs/GaAs quantum dots * semiconducting III/V materials
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Impact factor: 1.737, year: 2010
    Permanent Link: http://hdl.handle.net/11104/0185175
     
     
  6. 6.
    0318588 - FZÚ 2009 RIV NL eng J - Journal Article
    Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří - Hulicius, Eduard - Kuldová, Karla - Vyskočil, Jan - Melichar, Karel - Šimeček, Tomislav
    Influence of capping layer on the properties of MOVPE-grown InAs/GaAs quantum dots.
    [Vliv krycí vrstvy na vlastnosti InAs/GaAs kvantových teček připravených technologií MOVPE.]
    Journal of Crystal Growth. Roč. 310, č. 23 (2008), s. 5081-5084. ISSN 0022-0248. E-ISSN 1873-5002
    R&D Projects: GA AV ČR IAA100100719; GA ČR GA202/06/0718
    Institutional research plan: CEZ:AV0Z10100521
    Keywords : atomic force microscopy * nanostructures * low-pressure metalorganic vapor phase epitaxy * semiconducting III–V materials
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Impact factor: 1.757, year: 2008
    Permanent Link: http://hdl.handle.net/11104/0167961
     
     
  7. 7.
    0308047 - FZÚ 2008 RIV NL eng J - Journal Article
    Hulicius, Eduard - Oswald, Jiří - Pangrác, Jiří - Vyskočil, Jan - Hospodková, Alice - Kuldová, Karla - Melichar, Karel - Šimeček, Tomislav
    Growth and properties of InAs/InxGa1-xAs/GaAs quantum dot structures.
    [Růst a vlastnosti InAs/InxGa1-xAs/GaAs struktur s kvantovými tečkami.]
    Journal of Crystal Growth. Roč. 310, 7-9 (2008), s. 2229-2233. ISSN 0022-0248. E-ISSN 1873-5002
    R&D Projects: GA AV ČR KJB101630601; GA AV ČR IAA100100719; GA ČR GA202/06/0718; GA ČR GA202/05/0242
    Institutional research plan: CEZ:AV0Z10100521
    Keywords : nanostructures * metalorganic vapor-phase epitaxy * semiconducting III–V materials
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Impact factor: 1.757, year: 2008
    Permanent Link: http://hdl.handle.net/11104/0160642
     
     
  8. 8.
    0085194 - FZÚ 2008 RIV NL eng J - Journal Article
    Hospodková, Alice - Křápek, V. - Mates, Tomáš - Kuldová, Karla - Pangrác, Jiří - Hulicius, Eduard - Oswald, Jiří - Melichar, Karel - Humlíček, J. - Šimeček, Tomislav
    Lateral shape of InAs/GaAs quantum dots in vertically correlated structures grown by MOVPE.
    [Laterální tvar InAs/GaAs kvantových teček ve vertikálně korelovaných strukturách připravených pomocí MOVPE.]
    Journal of Crystal Growth. Roč. 298, - (2007), s. 570-573. ISSN 0022-0248. E-ISSN 1873-5002
    R&D Projects: GA AV ČR KJB101630601; GA ČR GA202/06/0718; GA ČR GA202/05/0242; GA MŠk LC510; GA MŠk(CZ) LC06040
    Institutional research plan: CEZ:AV0Z10100521
    Keywords : nanostructures * MOVPE * arsenides * semiconducting III-V materials
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Impact factor: 1.950, year: 2007
    Permanent Link: http://hdl.handle.net/11104/0147758
     
     
  9. 9.
    0085159 - FZÚ 2008 RIV NL eng J - Journal Article
    Hospodková, Alice - Hulicius, Eduard - Oswald, Jiří - Pangrác, Jiří - Mates, Tomáš - Kuldová, Karla - Melichar, Karel - Šimeček, Tomislav
    Properties of MOVPE InAs/GaAs quantum dots overgrown by InGaAs.
    [Vlastnosti InAs/GaAs kvantových teček přerůstaných InGaAs připravených pomocí MOVPE.]
    Journal of Crystal Growth. Roč. 298, - (2007), s. 582-858. ISSN 0022-0248. E-ISSN 1873-5002
    R&D Projects: GA AV ČR KJB101630601; GA ČR GA202/06/0718; GA MŠk LC510; GA MŠk(CZ) LC06040
    Institutional research plan: CEZ:AV0Z10100521
    Keywords : nanostructures * metalorganic vapor phase epitaxy * arsenides * semiconducting III-V materials
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Impact factor: 1.950, year: 2007
    Permanent Link: http://hdl.handle.net/11104/0147727
     
     
  10. 10.
    0078520 - FZÚ 2007 RIV DE eng J - Journal Article
    Kuldová, Karla - Křápek, V. - Hospodková, Alice - Oswald, Jiří - Pangrác, Jiří - Melichar, Karel - Hulicius, Eduard - Potemski, M. - Humlíček, J.
    1.3 μm emission from InAs/GaAs quantum dots.
    [1.3 μm emise InAs/GaAs kvantových teček.]
    Physica Status Solidi C. Roč. 3, č. 11 (2006), s. 3811-3814. ISSN 1610-1634
    R&D Projects: GA ČR GA202/05/0242; GA ČR GA202/06/0718; GA AV ČR KJB101630601
    Institutional research plan: CEZ:AV0Z10100521
    Keywords : nanostructures * metalorganic vapor phase epitaxy * arsenides * semiconducting III–V materials
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Permanent Link: http://hdl.handle.net/11104/0143602