Search results
- 1.0580341 - FZÚ 2024 RIV US eng J - Journal Article
Coraiola, M. - Haxell, D.Z. - Sabonis, D. - Weisbrich, H. - Svetogorov, A.E. - Hinderling, M. - ten Kate, S.C. - Cheah, E. - Křížek, Filip - Schott, R. - Wegscheider, W. - Cuevas, J.C. - Belzig, W. - Nichele, F.
Phase-engineering the Andreev band structure of a three-terminal Josephson junction.
Nature Communications. Roč. 14, č. 1 (2023), č. článku 6784. E-ISSN 2041-1723
Institutional support: RVO:68378271
Keywords : InAs shallow quantum well * Andreev band structure * multi-terminal Josephson junctions * phase-engineering
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 16.6, year: 2022
Method of publishing: Open access
Permanent Link: https://hdl.handle.net/11104/0349112File Download Size Commentary Version Access 0580341.pdf 0 6 MB CC licence Publisher’s postprint open-access - 2.0575228 - FZÚ 2024 RIV US eng J - Journal Article
Cheah, E. - Haxell, D.Z. - Schott, R. - Zeng, P. - Paysen, E. - ten Kate, S.C. - Coraiola, M. - Landstetter, M. - Zadeh, A.B. - Trampert, A. - Sousa, M. - Riel, H. - Nichele, F. - Wegscheider, W. - Křížek, Filip
Control over epitaxy and the role of the InAs/Al interface in hybrid two-dimensional electron gas systems.
Physical Review Materials. Roč. 7, č. 7 (2023), č. článku 073403. ISSN 2475-9953. E-ISSN 2475-9953
R&D Projects: GA ČR(CZ) GM22-22000M
Institutional support: RVO:68378271
Keywords : InAs shallow quantum well * superconductor semiconductor interface * epitaxial Al * hybrid 2DEG
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.4, year: 2022
Method of publishing: Open access
Permanent Link: https://hdl.handle.net/11104/0348792File Download Size Commentary Version Access 0575228.pdf 0 16.4 MB CC licence Publisher’s postprint open-access - 3.0536309 - FZÚ 2021 RIV US eng J - Journal Article
Jarý, Vítězslav - Hospodková, Alice - Hubáček, Tomáš - Hájek, František - Blažek, K. - Nikl, Martin
Optical properties of InGaN/GaN multiple quantum well structures grown on GaN and sapphire substrates.
IEEE Transactions on Nuclear Science. Roč. 67, č. 6 (2020), s. 974-977. ISSN 0018-9499. E-ISSN 1558-1578
R&D Projects: GA MŠMT(CZ) EF16_019/0000760; GA TA ČR TH02010580
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : gallium nitride * substrates * quantum well devices * photoluminescence * photonic band gap * fluctuations * nanotechnology * scintillation detectors
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.679, year: 2020
Method of publishing: Limited access
https://doi.org/10.1109/TNS.2020.2985666
Permanent Link: http://hdl.handle.net/11104/0314097 - 4.0521523 - FZÚ 2020 RIV eng P - Patent Document
Hospodková, Alice - Blažek, K. - Hulicius, Eduard - Touš, Jan - Nikl, Martin
Scintillation detector for detection of ionising radiation.
2018. Owner: Fyzikální ústav AV ČR, v. v. i. - CRYTUR SPOL. S R.O. Date of the patent acceptance: 04.09.2018. Patent Number: US10067246
R&D Projects: GA TA ČR TH02010580
Institutional support: RVO:68378271
Keywords : scintillation * detector * GaN * quantum well
OECD category: Electrical and electronic engineering
http://patft.uspto.gov/netacgi/nph-Parser?Sect1=PTO2&Sect2=HITOFF&p=1&u=%2Fnetahtml%2FPTO%2Fsearch-bool.html&r=1&f=G&l=50&co1=AND&d=PTXT&s1=10067246.PN.&OS=PN/10067246&RS=PN/10067246
Permanent Link: http://hdl.handle.net/11104/0306122 - 5.0520830 - FZÚ 2020 RIV US eng A - Abstract
Vaněk, Tomáš - Hubáček, Tomáš - Hájek, František - Kuldová, Karla - Oswald, Jiří - Pangrác, Jiří - Slavická Zíková, Markéta - Kretková, Tereza - Dominec, Filip - Hospodková, Alice
Luminescence red shift of InGaN/GaN heterostructures by enlargement of V-pits.
Book of Abstracts of the International Conference on Crystal Growth and Epitaxy - ICCGE /19./. CTI Meeting Technology, 2019. ISBN 9780463615836.
[International Conference on Crystal Growth and Epitaxy - ICCGE /19./. 28.07.2019-02.08.2019, Keystone]
R&D Projects: GA MŠMT(CZ) LO1603
Institutional support: RVO:68378271
Keywords : MOVPE * InGaN * quantum well * photoluminescence * cathodoluminescence
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Permanent Link: http://hdl.handle.net/11104/0305492 - 6.0501493 - FZÚ 2019 JP eng A - Abstract
Hospodková, Alice - Hubáček, Tomáš - Oswald, Jiří - Pangrác, Jiří - Kuldová, Karla - Dominec, Filip - Ledoux, G. - Dujardin, C.
Strong suppression of In desorption from InGaN QW by barrier growth.
ICMOVPE XIX - Technical Digest. Nara: Japanese Association for Crystal Growth, 2018 - (Miyake, H.). s. 131-132
[19th International Conference on Metalorganic Vapor Phase Epitaxy - ICMOVPE XIX. 03.06.2018-08.06.2018, Nara]
R&D Projects: GA MŠMT(CZ) LO1603; GA ČR(CZ) GA16-11769S
EU Projects: European Commission(XE) 690599 - ASCIMAT
Institutional support: RVO:68378271
Keywords : quantum well * InGaN * MOVPE
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Permanent Link: http://hdl.handle.net/11104/0293516 - 7.0492160 - FZÚ 2019 RIV DE eng J - Journal Article
Hospodková, Alice - Hubáček, Tomáš - Oswald, Jiří - Pangrác, Jiří - Kuldová, Karla - Hývl, Matěj - Dominec, Filip - Ledoux, G. - Dujardin, C.
InGaN/GaN structures: effect of the quantum well number on the cathodoluminescent properties.
Physica Status Solidi B. Roč. 255, č. 5 (2018), s. 1-5, č. článku 1700464. ISSN 0370-1972. E-ISSN 1521-3951
R&D Projects: GA MŠMT LM2015087; GA ČR GA16-11769S; GA MŠMT(CZ) LO1603
EU Projects: European Commission(XE) 690599 - ASCIMAT
Institutional support: RVO:68378271
Keywords : MOVPE * nitrides * scintillator * quantum well * cathodoluminescence
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.454, year: 2018
Permanent Link: http://hdl.handle.net/11104/0285718File Download Size Commentary Version Access 0492160.pdf 4 492.5 KB Author’s postprint open-access - 8.0479290 - FZÚ 2018 RIV FR eng C - Conference Paper (international conference)
Hospodková, Alice - Hubáček, Tomáš - Pangrác, Jiří - Oswald, Jiří - Hývl, Matěj - Zíková, Markéta - Hulicius, Eduard
MOVPE growth of InGaN/GaN MQW nitride scintillator structure.
EWMOVPE 17 - 17th European Workshop on Metalorganic Vapour Phase Epitaxy. Grenoble, 2017 - (Eymery, J.), s. 114-117
[EWMOVPE 17 - 17th European Workshop on Metalorganic Vapour Phase Epitaxy. Grenoble (FR), 18.06.2017-21.06.2017]
R&D Projects: GA ČR GA16-11769S; GA MŠMT LO1603
EU Projects: European Commission(XE) CZ.2.16/3.1.00/24510
Institutional support: RVO:68378271
Keywords : MOVPE * nitrides * scintillator * quantum well
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
http://inac.cea.fr/en/Phocea/Page/index.php?id=215&ref=193
Permanent Link: http://hdl.handle.net/11104/0275558 - 9.0469563 - FZÚ 2017 RIV US eng C - Conference Paper (international conference)
Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří - Kuldová, Karla - Zíková, Markéta - Hulicius, Eduard
Photoluminescence of InGaN/GaN MQW structures – technological aspects.
ASDAM 2016. Danvers: IEEE, 2016 - (Haščík, Š.; Dzuba, J.; Vanko, G.), s. 41-44. ISBN 978-150903083-5.
[International conference on advanced semiconductor devices and microsystems /11./. Smolenice (SK), 13.11.2016-16.11.2016]
R&D Projects: GA MŠMT LO1603; GA ČR GA16-15569S
Institutional support: RVO:68378271
Keywords : scintillator * GaN * multiple quantum well * photoluminescence * cathodoluminescence * MOVPE
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0267357 - 10.0463746 - FZÚ 2017 RIV DE eng A - Abstract
Hospodková, Alice - Oswald, Jiří - Pangrác, Jiří - Zíková, Markéta - Vyskočil, Jan - Kuldová, Karla - Melichar, Karel - Hubáček, Tomáš - Walachová, J. - Vaniš, J. - Křápek, V. - Humlíček, J. - Nikl, Martin - Pacherová, Oliva - Brůža, P. - Pánek, D. - Foltynski, B. - Oeztuerk, M. - Heuken, M. - Hulicius, Eduard
Nanostructures grown by MOVPE InAs/InGaAs/Ga(Sb)As quantum dot and GaN/InGaN quantum well structures.
GCCCG-1/DKT2016. Dresden: TU Dresden, 2016. s. 38.
[German Czechoslovak Conference on Crystal Growth (GCCCG-1) /1./. 16.03.2016-18.03.2016, Dresden]
R&D Projects: GA ČR GA13-15286S; GA ČR(CZ) GP14-21285P; GA MŠMT(CZ) LM2011026
Institutional support: RVO:68378271
Keywords : MOVPE * InAs quantum dot * GaAsSb SRL * GaInN quantum well * GaN * GaAs
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0262837