Search results
- 1.0542805 - FZÚ 2022 RIV NL eng J - Journal Article
Vaněk, Tomáš - Hájek, František - Dominec, Filip - Hubáček, Tomáš - Kuldová, Karla - Pangrác, Jiří - Košutová, Tereza - Kejzlar, P. - Bábor, P. - Lachowski, A. - Hospodková, Alice
Luminescence redshift of thick InGaN/GaN heterostructures induced by the migration of surface adsorbed atoms.
Journal of Crystal Growth. Roč. 565, July (2021), s. 1-6, č. článku 126151. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA MŠk(CZ) EF16_019/0000760; GA MŠk LM2018110; GA TA ČR(CZ) FW03010298
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : characterization * growth models * MOVPE * nitrides * scintillators
Subject RIV: BM - Solid Matter Physics ; Magnetism
OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.797, year: 2020
https://doi.org/10.1016/j.jcrysgro.2021.126151
Permanent Link: http://hdl.handle.net/11104/0320191 - 2.0542725 - FZÚ 2022 RIV NL eng J - Journal Article
Hájek, František - Hospodková, Alice - Hubáček, Tomáš - Oswald, Jiří - Pangrác, Jiří - Dominec, Filip - Horešovský, Robert - Kuldová, Karla
Depth profile of acceptor concentration in InGaN/GaN multiple quantum wells.
Journal of Luminescence. Roč. 236, Aug (2021), s. 1-5, č. článku 118127. ISSN 0022-2313. E-ISSN 1872-7883
R&D Projects: GA MŠk(CZ) EF16_019/0000760; GA TA ČR(CZ) FW03010298
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : nitrides * impurity * SIMS * InGaN/GaN
Subject RIV: BM - Solid Matter Physics ; Magnetism
OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.599, year: 2020
https://www.doi.org/10.1016/j.jlumin.2021.118127
Permanent Link: http://hdl.handle.net/11104/0320090File Download Size Commentary Version Access 0542725.pdf 2 1 MB Author’s postprint require - 3.0532847 - FZÚ 2021 RIV NL eng J - Journal Article
Hospodková, Alice - Hájek, František - Pangrác, Jiří - Slavická Zíková, Markéta - Hubáček, Tomáš - Kuldová, Karla - Oswald, Jiří - Vaněk, Tomáš - Vetushka, Aliaksi - Čížek, J. - Liedke, M.O. - Butterling, M. - Wagner, A.
A secret luminescence killer in deepest QWs of InGaN/GaN multiple quantum well structures.
Journal of Crystal Growth. Roč. 536, Apr (2020), s. 1-6, č. článku 125579. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA MŠk LM2015087; GA TA ČR TH02010580; GA MŠk(CZ) LO1603
Institutional support: RVO:68378271
Keywords : quantum wells * defects * impurities * metalorganic vapor phase epitaxy * nitrides
Subject RIV: BM - Solid Matter Physics ; Magnetism
OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.797, year: 2020
https://doi.org/10.1016/j.jcrysgro.2020.125579
Permanent Link: http://hdl.handle.net/11104/0311234 - 4.0509851 - ÚFM 2020 RIV NL eng J - Journal Article
Lee, L.Y. - Frentrup, M. - Vacek, Petr - Massabuau, Fabien C. P. - Kappers, Menno J. - Wallis, David J. - Oliver, Rachel A.
Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates.
Journal of Crystal Growth. Roč. 524, OCT (2019), č. článku 125167. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA MŠk(CZ) EF16_027/0008056
Institutional support: RVO:68081723
Keywords : Atomic force microscopy * Nucleation * X-ray diffraction * Metalorganic vapor phase epitaxy * Nitrides * Semiconducting gallium compounds
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
OBOR OECD: Electrical and electronic engineering
Impact factor: 1.632, year: 2019
https://www.sciencedirect.com/science/article/pii/S0022024819303823?via%3Dihub
Permanent Link: http://hdl.handle.net/11104/0300844 - 5.0509467 - FZÚ 2020 RIV CH eng J - Journal Article
Vlčák, P. - Fojt, J. - Weiss, Zdeněk - Kopeček, Jaromír - Peřina, V.
The effect of nitrogen saturation on the corrosion behaviour of Ti-35Nb-7Zr-5Ta beta titanium alloy nitrided by ion implantation.
Surface and Coatings Technology. Roč. 358, Jan (2019), s. 144-152. ISSN 0257-8972
R&D Projects: GA MŠk(CZ) LO1409; GA MŠk(CZ) LM2015088
Grant - others:FUNBIO(XE) CZ.2.16/3.1.00/21568
Institutional support: RVO:68378271
Keywords : nitrogen ion implantation * titanium alloy * nitrides * blisters * corrosion
Subject RIV: BM - Solid Matter Physics ; Magnetism
OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.784, year: 2019
https://doi.org/10.1016/j.surfcoat.2018.11.004
Permanent Link: http://hdl.handle.net/11104/0300207 - 6.0502838 - FZÚ 2019 RIV NL eng J - Journal Article
Hubáček, Tomáš - Hospodková, Alice - Oswald, Jiří - Kuldová, Karla - Pangrác, Jiří - Zíková, Markéta - Hájek, František - Dominec, Filip - Florini, N. - Komninou, Ph. - Ledoux, G. - Dujardin, C.
Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface.
Journal of Crystal Growth. Roč. 507, Feb (2019), s. 310-315. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA MŠk LM2015087; GA ČR(CZ) GA16-11769S; GA MŠk(CZ) LO1603
EU Projects: European Commission(XE) 690599 - ASCIMAT
Institutional support: RVO:68378271
Keywords : interfaces * MOVPE * quantum wells * nitrides * scintillators
Subject RIV: BM - Solid Matter Physics ; Magnetism
OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.632, year: 2019
Permanent Link: http://hdl.handle.net/11104/0294724File Download Size Commentary Version Access 0502838.pdf 2 1.3 MB Author’s postprint open-access - 7.0502374 - FZÚ 2019 RIV CZ eng C - Conference Paper (international conference)
Hájek, František - Hospodková, Alice - Oswald, Jiří - Slavická Zíková, Markéta
Influence of Si doping in different layers on luminescence properties of InGaN/GaN multiple quantum well structure.
Proceedings of the 8th Student scientific conference of solid state engineering and materials. Praha: České vysoké učení technické v Praze, 2018 - (Dragounová, K.; Koubský, T.; Kalvoda, L.; Čapek, J.; Trojan, K.; Kolenko, P.), s. 42-45. ISBN 978-80-01-06511-2.
[Student scientific conference of solid state engineering and materials /8./. Sedliště (CZ), 17.09.2018-21.09.2018]
Institutional support: RVO:68378271
Keywords : nitrides * quantum wells * luminescence * semiconductor doping
Subject RIV: BM - Solid Matter Physics ; Magnetism
OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Permanent Link: http://hdl.handle.net/11104/0294317 - 8.0500425 - ÚFP 2020 RIV NL eng J - Journal Article
Matějíček, Jiří - Veverka, Jakub - Nemanič, V. - Cvrček, L. - Lukáč, František - Havránek, Vladimír - Illková, Ksenia
Characterization of less common nitrides as potential permeation barriers.
Fusion Engineering and Design. Roč. 139, February 2019 (2019), s. 74-80. ISSN 0920-3796. E-ISSN 1873-7196
R&D Projects: GA ČR(CZ) GA14-12837S; GA MŠk LM2015056
EU Projects: European Commission(XE) 633053 - EUROfusion
Institutional support: RVO:61389021 ; RVO:61389005
Keywords : Adhesion * Hydrogen permeation barriers * Nitrides * Permeation measurement * Physical vapor deposition * Residual stress
Subject RIV: JG - Metallurgy
OBOR OECD: Materials engineering
Impact factor: 1.692, year: 2019
https://www.sciencedirect.com/science/article/pii/S0920379618308214?via%3Dihub
Permanent Link: http://hdl.handle.net/11104/0292506File Download Size Commentary Version Access Characterization of less common nitrides as potential permeation barriers.pdf 5 2.4 MB Publisher’s postprint require - 9.0495805 - FZÚ 2019 RIV DE eng J - Journal Article
Rettig, O. - Scholz, J.P. - Steiger, N. - Bauer, S. - Hubáček, Tomáš - Zíková, Markéta - Li, Y. - Qi, H. - Biskupek, J. - Kaiser, U. - Thonke, K. - Scholz, F.
Investigation of Boron containing AlN and AlGaN layers grown by MOVPE.
Physica Status Solidi B. Roč. 255, č. 5 (2018), s. 1-9, č. článku 1700510. ISSN 0370-1972. E-ISSN 1521-3951
Institutional support: RVO:68378271
Keywords : boron nitrides * AIBN * AIBGaN * TEM * XRD * heterostructure
Subject RIV: BM - Solid Matter Physics ; Magnetism
OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.454, year: 2018
Permanent Link: http://hdl.handle.net/11104/0289786 - 10.0492160 - FZÚ 2019 RIV DE eng J - Journal Article
Hospodková, Alice - Hubáček, Tomáš - Oswald, Jiří - Pangrác, Jiří - Kuldová, Karla - Hývl, Matěj - Dominec, Filip - Ledoux, G. - Dujardin, C.
InGaN/GaN structures: effect of the quantum well number on the cathodoluminescent properties.
Physica Status Solidi B. Roč. 255, č. 5 (2018), s. 1-5, č. článku 1700464. ISSN 0370-1972. E-ISSN 1521-3951
R&D Projects: GA MŠk LM2015087; GA ČR GA16-11769S; GA MŠk(CZ) LO1603
EU Projects: European Commission(XE) 690599 - ASCIMAT
Institutional support: RVO:68378271
Keywords : MOVPE * nitrides * scintillator * quantum well * cathodoluminescence
Subject RIV: BM - Solid Matter Physics ; Magnetism
OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.454, year: 2018
Permanent Link: http://hdl.handle.net/11104/0285718File Download Size Commentary Version Access 0492160.pdf 4 492.5 KB Author’s postprint open-access