Search results

  1. 1.
    0543533 - FZÚ 2022 RIV GB eng J - Journal Article
    Hájek, František - Hospodková, Alice - Hubík, Pavel - Gedeonová, Zuzana - Hubáček, Tomáš - Pangrác, Jiří - Kuldová, Karla
    Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design.
    Semiconductor Science and Technology. Roč. 36, č. 7 (2021), s. 1-9, č. článku 075016. ISSN 0268-1242. E-ISSN 1361-6641
    R&D Projects: GA MŠk LM2018110; GA MŠk(CZ) LTAIN19163; GA MŠk(CZ) EF16_019/0000760
    Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
    Institutional support: RVO:68378271
    Keywords : HEMT * GaN * metalorganic vapor phase epitaxy
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.)
    Impact factor: 2.352, year: 2020
    Permanent Link: http://hdl.handle.net/11104/0320728
     
     
  2. 2.
    0532847 - FZÚ 2021 RIV NL eng J - Journal Article
    Hospodková, Alice - Hájek, František - Pangrác, Jiří - Slavická Zíková, Markéta - Hubáček, Tomáš - Kuldová, Karla - Oswald, Jiří - Vaněk, Tomáš - Vetushka, Aliaksi - Čížek, J. - Liedke, M.O. - Butterling, M. - Wagner, A.
    A secret luminescence killer in deepest QWs of InGaN/GaN multiple quantum well structures.
    Journal of Crystal Growth. Roč. 536, Apr (2020), s. 1-6, č. článku 125579. ISSN 0022-0248. E-ISSN 1873-5002
    R&D Projects: GA MŠk LM2015087; GA TA ČR TH02010580; GA MŠk(CZ) LO1603
    Institutional support: RVO:68378271
    Keywords : quantum wells * defects * impurities * metalorganic vapor phase epitaxy * nitrides
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.)
    Impact factor: 1.797, year: 2020
    https://doi.org/10.1016/j.jcrysgro.2020.125579
    Permanent Link: http://hdl.handle.net/11104/0311234
     
     
  3. 3.
    0509851 - ÚFM 2020 RIV NL eng J - Journal Article
    Lee, L.Y. - Frentrup, M. - Vacek, Petr - Massabuau, Fabien C. P. - Kappers, Menno J. - Wallis, David J. - Oliver, Rachel A.
    Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates.
    Journal of Crystal Growth. Roč. 524, OCT (2019), č. článku 125167. ISSN 0022-0248. E-ISSN 1873-5002
    R&D Projects: GA MŠk(CZ) EF16_027/0008056
    Institutional support: RVO:68081723
    Keywords : Atomic force microscopy * Nucleation * X-ray diffraction * Metalorganic vapor phase epitaxy * Nitrides * Semiconducting gallium compounds
    Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
    OBOR OECD: Electrical and electronic engineering
    Impact factor: 1.632, year: 2019
    https://www.sciencedirect.com/science/article/pii/S0022024819303823?via%3Dihub
    Permanent Link: http://hdl.handle.net/11104/0300844
     
     
  4. 4.
    0505794 - FZÚ 2020 RIV NL eng J - Journal Article
    Dominec, Filip - Hospodková, Alice - Hubáček, Tomáš - Zíková, Markéta - Pangrác, Jiří - Kuldová, Karla - Vetushka, Aliaksi - Hulicius, Eduard
    Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties.
    Journal of Crystal Growth. Roč. 507, Feb (2019), s. 246-250. ISSN 0022-0248. E-ISSN 1873-5002
    R&D Projects: GA MŠk(CZ) LO1603; GA ČR GA16-15569S
    EU Projects: European Commission(XE) 690599 - ASCIMAT
    Institutional support: RVO:68378271
    Keywords : low dimensional structures * V-pits * metalorganic vapor phase epitaxy * InGaN/GaN quantum wells * GaN buffer layer * scintillators
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.)
    Impact factor: 1.632, year: 2019
    https://doi.org/10.1016/j.jcrysgro.2018.11.025
    Permanent Link: http://hdl.handle.net/11104/0297183
    FileDownloadSizeCommentaryVersionAccess
    0505794.pdf31.1 MBAuthor’s postprintopen-access
     
     
  5. 5.
    0501495 - FZÚ 2019 JP eng A - Abstract
    Hospodková, Alice - Dominec, Filip - Hubáček, Tomáš - Zíková, Markéta - Pangrác, Jiří - Oswald, Jiří - Kuldová, Karla - Vetushka, Aliaksi - Hulicius, Eduard
    Suppressed contamination of InGaN/GaN MQW region by growing the buffer layer at lower temperature.
    ICMOVPE XIX - Technical Digest. Nara: Japanese Association for Crystal Growth, 2018 - (Miyake, H.). s. 147-147
    [19th International Conference on Metalorganic Vapor Phase Epitaxy - ICMOVPE XIX. 03.06.2018-08.06.2018, Nara]
    R&D Projects: GA MŠk(CZ) LO1603; GA ČR GA16-15569S
    EU Projects: European Commission(XE) 690599 - ASCIMAT
    Institutional support: RVO:68378271
    Keywords : GaN buffer layer * scintillators * low dimensional structures * V-pits * metalorganic vapor phase epitaxy * InGaN/GaN QWs
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.)
    Permanent Link: http://hdl.handle.net/11104/0293517
     
     
  6. 6.
    0456264 - FZÚ 2016 RIV NL eng J - Journal Article
    Šimek, P. - Sedmidubský, D. - Klímová, K. - Mikulics, M. - Maryško, Miroslav - Veselý, M. - Jurek, Karel - Sofer, Z.
    GaN:Co epitaxial layers grown by MOVPE.
    Journal of Crystal Growth. Roč. 44, Mar (2015), 62-68. ISSN 0022-0248. E-ISSN 1873-5002
    R&D Projects: GA ČR GA13-20507S
    Institutional support: RVO:68378271
    Keywords : doping * metalorganic vapor phase epitaxy * cobalt * gallium compounds * nitrides * magnetic materials spintronics
    Subject RIV: CA - Inorganic Chemistry
    Impact factor: 1.462, year: 2015
    Permanent Link: http://hdl.handle.net/11104/0256820
     
     
  7. 7.
    0447827 - FZÚ 2016 RIV NL eng J - Journal Article
    Vyskočil, Jan - Gladkov, Petar - Petříček, Václav - Hospodková, Alice - Pangrác, Jiří
    Growth and properties of AIII BV QD structures for intermediate band solar cells.
    Journal of Crystal Growth. Roč. 414, č. 172 (2015), s. 172-176. ISSN 0022-0248. E-ISSN 1873-5002
    R&D Projects: GA ČR(CZ) GP14-21285P
    Institutional support: RVO:68378271 ; RVO:67985882
    Keywords : metalorganic vapor phase epitaxy * InAs/GaAs Quantum dots * GaAsSb Strain reducing layer * solar cells
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Impact factor: 1.462, year: 2015
    Permanent Link: http://hdl.handle.net/11104/0249601
     
     
  8. 8.
    0433689 - FZÚ 2015 CH eng A - Abstract
    Morávek, P. - Pangrác, Jiří - Fulem, M. - Hulicius, Eduard - Růžička, K.
    Vapor pressures of (3-dimethylaminopropyl)dimethylindium, (t-butylimino)bis(diethylamino)tantalum cyclopentadienylide, and (t-butylimido)tris(ethylmethylamino)tantalum.
    International Conference on Metalorganic Vapor Phase Epitaxy /17./. Lausanne: École Polytechnique Fédérale de Lausanne, 2014 - (Kapon, E.; Rudra, A.). s. 7-7
    [International Conference on Metalorganic Vapor Phase Epitaxy /17./. 13.07.2014-18.07.2014, Lausanne]
    Institutional support: RVO:68378271
    Keywords : metalorganic vapor phase epitaxy * vapor pressure * static method * indium precursors * tantalum precursors
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Permanent Link: http://hdl.handle.net/11104/0237855
     
     
  9. 9.
    0433688 - FZÚ 2015 CH eng A - Abstract
    Hospodková, Alice - Pangrác, Jiří - Vyskočil, Jan - Zíková, Markéta - Oswald, Jiří - Komninou, Ph. - Hulicius, Eduard
    Growth of InAs/GaAs quantum dots covered by GaAsSb in multiple structures studied by reflectance anisotropy spectroscopy.
    International Conference on Metalorganic Vapor Phase Epitaxy /17./. Lausanne: École Polytechnique Fédérale de Lausanne, 2014 - (Kapon, E.; Rudra, A.). s. 14-14
    [International Conference on Metalorganic Vapor Phase Epitaxy /17./. 13.07.2014-18.07.2014, Lausanne]
    R&D Projects: GA ČR(CZ) GP14-21285P; GA ČR GA13-15286S
    Institutional support: RVO:68378271
    Keywords : metalorganic vapor phase epitaxy * InAs/GaAs quantum dots * GaAsSb strain reducing layer * reflectance anisotropy
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Permanent Link: http://hdl.handle.net/11104/0237854
     
     
  10. 10.
    0433687 - FZÚ 2015 CH eng A - Abstract
    Vyskočil, Jan - Gladkov, Petar - Petříček, Otto - Hospodková, Alice - Pangrác, Jiří
    Growth and properties of AIII BV QD structures for intermediate band solar cells.
    International Conference on Metalorganic Vapor Phase Epitaxy /17./. Lausanne: École Polytechnique Fédérale de Lausanne, 2014 - (Kapon, E.; Rudra, A.). s. 7-7
    [International Conference on Metalorganic Vapor Phase Epitaxy /17./. 13.07.2014-18.07.2014, Lausanne]
    R&D Projects: GA ČR(CZ) GP14-21285P
    Institutional support: RVO:68378271 ; RVO:67985882
    Keywords : metalorganic vapor phase epitaxy * InAs/GaAs quantum dots * GaAsSb strain reducing layer * solar cells
    Permanent Link: http://hdl.handle.net/11104/0237896