Search results
- 1.0469569 - FZÚ 2017 RIV US eng C - Conference Paper (international conference)
Zíková, Markéta - Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří - Hulicius, Eduard
GaAsSb/InAs QDs structures for advanced telecom lasers.
ASDAM 2016. Danvers: IEEE, 2016 - (Haščík, Š.; Dzuba, J.; Vanko, G.), s. 57-60. ISBN 978-150903083-5.
[International conference on advanced semiconductor devices and microsystems /11./. Smolenice (SK), 13.11.2016-16.11.2016]
R&D Projects: GA MŠMT LO1603
Institutional support: RVO:68378271
Keywords : InAs/GaAs quantum dots * MOVPE * strain reducing layer * long emission wavelength * telecom lasers
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0267401 - 2.0448593 - FZÚ 2016 RIV NL eng J - Journal Article
Zíková, Markéta - Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří - Krčil, Pavel - Hulicius, Eduard - Komninou, Ph. - Kioseoglou, J.
MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 µm.
Journal of Crystal Growth. Roč. 414, Mar (2015), 167-171. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA ČR GA13-15286S; GA MŠMT(CZ) LM2011026
Institutional support: RVO:68378271
Keywords : long emission wavelength * photocurrent * InAs quantum dots * MOVPE * GaAsSb layer
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.462, year: 2015
Permanent Link: http://hdl.handle.net/11104/0250242 - 3.0433914 - FZÚ 2015 CH eng A - Abstract
Zíková, Markéta - Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří - Krčil, Pavel - Hulicius, Eduard - Komninou, Ph. - Kioseoglou, J.
MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 µm.
International Conference on Metalorganic Vapor Phase Epitaxy /17./. Lausanne: École Polytechnique Fédérale de Lausanne, 2014 - (Kapon, E.; Rudra, A.). s. 14-14
[International Conference on Metalorganic Vapor Phase Epitaxy /17./. 13.07.2014-18.07.2014, Lausanne]
R&D Projects: GA ČR GA13-15286S
Institutional support: RVO:68378271
Keywords : InAs quantum dots * GaAsSb layer * photocurrent * long emission wavelength * MOVPE
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0238091