Search results
- 1.0500481 - FZÚ 2019 RIV GB eng J - Journal Article
Supplie, O. - Romanyuk, Olexandr - Koppka, C. - Steidl, M. - Nägelein, A. - Paszuk, A. - Winterfeld, L. - Dobrich, A. - Kleinschmidt, P. - Runge, E. - Hannappel, T.
Metalorganic vapor phase epitaxy of III V-on-silicon: experiment and theory.
Progress in Crystal Growth and Characterization of Materials. Roč. 64, č. 4 (2018), s. 103-132. ISSN 0960-8974. E-ISSN 1878-4208
R&D Projects: GA ČR GC18-06970J
Institutional support: RVO:68378271
Keywords : III-V-on-silicon * heteroepitaxy * MOCVD * MOVPE * theory
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.872, year: 2018
Method of publishing: Limited access
https://doi.org/10.1016/j.pcrysgrow.2018.07.002
Permanent Link: http://hdl.handle.net/11104/0292543 - 2.0440096 - FZÚ 2015 RIV US eng J - Journal Article
Supplie, O. - Brückner, S. - Romanyuk, Olexandr - Döscher, H. - Höhn, C. - May, M.M. - Kleinschmidt, P. - Grosse, F. - Hannappel, T.
Atomic scale analysis of the GaP/Si(100) heterointerface by in situ reflection anisotropy spectroscopy and ab initio density functional theory.
Physical Review. B. Roč. 90, č. 23 (2014), "235301-1"-"235301-7". ISSN 1098-0121
Grant - others:AVČR(CZ) M100101201
Institutional support: RVO:68378271
Keywords : solar cells * GaP on Si(001) heteroepitaxy * RAS * DFT
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 3.736, year: 2014
Permanent Link: http://hdl.handle.net/11104/0243233 - 3.0356059 - ÚFE 2012 RIV CZ eng C - Conference Paper (international conference)
Nohavica, Dušan - Grym, Jan - Hulicius, Eduard - Pangrác, Jiří - Gladkov, Petar - Jarchovský, Zdeněk
EPITAXIAL OVERGROWTH OF InP and GaAs MICROPORES, MICROCAVITIES AND MICROLAMELLAS BY InAs AND InGaAs.
CONFERENCE PROCEEDINGS NANOCON 2010. Ostrava: TANGER, 2010 - (Zbořil, R.), s. 28-33. ISBN 978-80-87294-19-2.
[NANOCON 2010. International Conference /2./. Olomouc (CZ), 12.10.2010-14.10.2010]
Institutional research plan: CEZ:AV0Z20670512; CEZ:AV0Z10100521
Keywords : A3B5 * micropores * heteroepitaxy
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0194679 - 4.0324855 - FZÚ 2009 RIV CZ eng C - Conference Paper (international conference)
Kotrla, Miroslav - Volkmann, T. - Much, F. - Biehl, M.
Mechanism of formation of self-assembeled nanostructures in heteroepitaxy.
[[Mechanismus vzniku spontánně tvořených nanostruktůr při heteroepitaxy.]
NANO´03. Brno: Brno University of Technology, 2003 - (Sandera, P.), s. 98-103. ISBN 80-214-2527-X.
[International Conference Nano03. Brno (CZ), 21.10.2003-23.10.2003]
Institutional research plan: CEZ:AV0Z1010914
Keywords : surface nanostructure * self-assembly * heteroepitaxy * strain * Monte Carlo simulation
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0172454 - 5.0100322 - FZU-D 20040257 RIV US eng J - Journal Article
Kocán, P. - Sobotík, P. - Ošt'ádal, I. - Kotrla, Miroslav
Continuous and correlated nucleation during nonstandard island growth at Ag/Si(111)-7X7 heteroepitaxy.
[Spojitá a korelovaná nukleace během nestandardního růstu ostrůvků při Ag/Si(111)-7x7 heteroepitaxi.]
Physical Review. B. Roč. 69, č. 16 (2004), 165409/1-165409/6. ISSN 0163-1829
R&D Projects: GA ČR GA202/01/0928
Grant - others:GA-(CZ) FRVŠ2735/2003
Institutional research plan: CEZ:AV0Z1010914
Keywords : heteroepitaxy * Ag, Si(111) * mechanism of growth * island size distribution * Monte Carlo simulations
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 3.075, year: 2004
Permanent Link: http://hdl.handle.net/11104/0007825