Search results
- 1.0541992 - ÚFM 2022 RIV US eng J - Journal Article
Vacek, Petr - Frentrup, M. - Lee, L. Y. - Massabuau, Fabien C. P. - Kappers, Menno J. - Wallis, David J. - Gröger, Roman - Oliver, Rachel A.
Defect structures in (001) zincblende GaN/3C-SiC nucleation layers.
Journal of Applied Physics. Roč. 129, č. 15 (2021), č. článku 155306. ISSN 0021-8979. E-ISSN 1089-7550
R&D Projects: GA MŠMT(CZ) EF16_027/0008056
Institutional support: RVO:68081723
Keywords : stacking faults * gallium nitride * transmission electron microscopy
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 2.877, year: 2021
Method of publishing: Open access
https://aip.scitation.org/doi/10.1063/5.0036366
Permanent Link: http://hdl.handle.net/11104/0319746 - 2.0536309 - FZÚ 2021 RIV US eng J - Journal Article
Jarý, Vítězslav - Hospodková, Alice - Hubáček, Tomáš - Hájek, František - Blažek, K. - Nikl, Martin
Optical properties of InGaN/GaN multiple quantum well structures grown on GaN and sapphire substrates.
IEEE Transactions on Nuclear Science. Roč. 67, č. 6 (2020), s. 974-977. ISSN 0018-9499. E-ISSN 1558-1578
R&D Projects: GA MŠMT(CZ) EF16_019/0000760; GA TA ČR TH02010580
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : gallium nitride * substrates * quantum well devices * photoluminescence * photonic band gap * fluctuations * nanotechnology * scintillation detectors
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.679, year: 2020
Method of publishing: Limited access
https://doi.org/10.1109/TNS.2020.2985666
Permanent Link: http://hdl.handle.net/11104/0314097 - 3.0524049 - ÚFM 2021 RIV NL eng J - Journal Article
Antoš, Zdeněk - Vacek, Petr - Gröger, Roman
Intersections of two stacking faults in zincblende GaN.
Computational Materials Science. Roč. 180, JUL (2020), č. článku 109620. ISSN 0927-0256. E-ISSN 1879-0801
R&D Projects: GA MŠMT(CZ) LQ1601
Institutional support: RVO:68081723
Keywords : Atomistic simulation * Gallium nitride * Gamma surface * Stacking fault * Zincblende
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.300, year: 2020
Method of publishing: Limited access
https://www.sciencedirect.com/science/article/pii/S0927025620301117?via%3Dihub
Permanent Link: http://hdl.handle.net/11104/0309681 - 4.0506256 - ÚFM 2020 RIV US eng J - Journal Article
Lee, Lok Y. - Frentrup, M. - Vacek, Petr - Kappers, Menno J. - Wallis, David J. - Oliver, Rachel A.
Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEM.
Journal of Applied Physics. Roč. 125, č. 10 (2019), č. článku 105303. ISSN 0021-8979. E-ISSN 1089-7550
R&D Projects: GA MŠMT(CZ) EF16_027/0008056; GA MŠMT(CZ) LQ1601
Institutional support: RVO:68081723
Keywords : Epilayers * Gallium nitride * High resolution transmission electron microscopy * III-V semiconductors * Silicon carbide * Stacking faults * X ray diffraction * Zinc sulfide
OECD category: Electrical and electronic engineering
Impact factor: 2.286, year: 2019
Method of publishing: Open access
http://orca.cf.ac.uk/120129/1/Wallis%20D%20-%20Investigation%20of%20stacking%20faults%20in%20MOVPE-grown%20....pdf
Permanent Link: http://hdl.handle.net/11104/0300842 - 5.0477154 - FZÚ 2018 RIV US eng C - Conference Paper (international conference)
Hospodková, Alice - Pangrác, Jiří - Kuldová, Karla - Nikl, Martin - Pacherová, Oliva - Oswald, Jiří - Hubáček, Tomáš - Zíková, Markéta - Brůža, P. - Pánek, D. - Blažek, K. - Ledoux, G. - Dujardin, C. - Heuken, M. - Hulicius, Eduard
Devices based on InGaN/GaN multiple quantum well for scintillator and detector applications.
Fourth Conference on Sensors, MEMS, and Electro-Optic Systems. Bellingham: SPIE, 2017 - (du Plessis, M.), s. 1-15, č. článku 1003617. Proceedings of SPIE, 10036. ISBN 978-151060513-8. ISSN 0277-786X.
[South African Conference on Sensors, MEMS and Electro-Optical Systems (SMEOS) /4./. Skukuza (ZA), 18.09.2016-20.09.2016]
R&D Projects: GA MŠMT LM2015087; GA MŠMT LO1603; GA ČR GA16-15569S
EU Projects: European Commission(XE) CZ.2.16/3.1.00/24510; European Commission(XE) 690599 - ASCIMAT
Institutional support: RVO:68378271
Keywords : gallium nitride * indium gallium nitride * quantum wells * scintillators * sensors * luminescence * excitons * scintillation * radiation * resistance
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Permanent Link: http://hdl.handle.net/11104/0273529File Download Size Commentary Version Access 0477154.pdf 6 459.7 KB Other open-access - 6.0468194 - FZÚ 2017 RIV RO eng J - Journal Article
Prajzler, V. - Nekvindová, P. - Varga, Marián - Bruncko, J. - Remeš, Zdeněk - Kromka, Alexander
Prism coupling technique for characterization of the high refractive index planar waveguides.
Journal of Optoelectronics and Advanced Materials. Roč. 18, 11-12 (2016), s. 915-921. ISSN 1454-4164. E-ISSN 1841-7132
R&D Projects: GA ČR(CZ) GA14-05053S
Institutional support: RVO:68378271
Keywords : high index contrast * optical planar waveguides * zinc oxide * nanocrystalline diamond * gallium nitride
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 0.449, year: 2016
Permanent Link: http://hdl.handle.net/11104/0266040 - 7.0425306 - FZÚ 2014 RIV US eng J - Journal Article
Jirásek, V. - Ižák, Tibor - Babchenko, Oleg - Kromka, Alexander - Vanko, G.
Modeling of thermal stress induced during the diamond-coating of AlGaN/GaN high electron mobility transistors.
Advanced Science, Engineering and Medicine. Roč. 5, č. 6 (2013), s. 522-526. ISSN 2164-6627
R&D Projects: GA ČR(CZ) GBP108/12/G108
Institutional support: RVO:68378271
Keywords : gallium nitride * HEMT * nano-crystalline diamond * selective diamond growth
Subject RIV: BM - Solid Matter Physics ; Magnetism
http://dx.doi.org/10.1166/asem.2013.1324.
Permanent Link: http://hdl.handle.net/11104/0231205 - 8.0420780 - FZÚ 2014 RIV US eng J - Journal Article
Jirásek, Vít - Ižák, Tibor - Babchenko, Oleg - Kromka, Alexander - Vanko, G.
Modeling of thermal stress induced during the diamond-coating of ALGaN/GaN high electron mobility transistors.
Advanced Science, Engineering and Medicine. Roč. 5, č. 6 (2013), s. 522-526. ISSN 2164-6627
R&D Projects: GA ČR(CZ) GBP108/12/G108
Institutional support: RVO:68378271
Keywords : nano-crystalline diamond * gallium nitride * HEMT * selective diamond growth
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0227254 - 9.0395132 - ÚFE 2014 RIV GB eng J - Journal Article
Yatskiv, Roman - Grym, Jan
Thermal stability study of semimetal graphite n-InP and n-GaN Schottky diodes.
Semiconductor Science and Technology. Roč. 28, č. 5 (2013). ISSN 0268-1242. E-ISSN 1361-6641
R&D Projects: GA MŠMT LD12014
Institutional support: RVO:67985882
Keywords : Gallium nitride * Schottky barrier diodes * Graphite
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 2.206, year: 2013
Permanent Link: http://hdl.handle.net/11104/0223260File Download Size Commentary Version Access UFE 0395132.pdf 12 508.5 KB Other require - 10.0393052 - ÚOCHB 2014 RIV NL eng J - Journal Article
Sofer, Z. - Sedmidubský, D. - Huber, Š. - Šimek, P. - Šaněk, F. - Jankovský, O. - Gregorová, E. - Fiala, R. - Matějková, Stanislava - Mikulics, M.
Rapid thermal synthesis of GaN nanocrystals and nanodisks.
Journal of Nanoparticle Research. Roč. 15, č. 1 (2013), 1411/1-1411/7. ISSN 1388-0764. E-ISSN 1572-896X
Institutional support: RVO:61388963
Keywords : gallium nitride * thermal ammonolysis * nanodisks * nanocrystals
Subject RIV: CF - Physical ; Theoretical Chemistry
Impact factor: 2.278, year: 2013
Permanent Link: http://hdl.handle.net/11104/0221826