Search results
- 1.0578139 - FZÚ 2024 RIV US eng J - Journal Article
Hazdra, P. - Laposa, A. - Šobáň, Z. - Kroutil, J. - Lambert, Nicolas - Povolný, V. - Taylor, Andrew - Mortet, Vincent
Pseudo-vertical Schottky diode with Ruthenium contacts on (113) boron-doped homoepitaxial diamond layers.
Physica Status Solidi A. Roč. 220, č. 23 (2023), č. článku 2300508. ISSN 1862-6300. E-ISSN 1862-6319
R&D Projects: GA MŠMT(CZ) EF16_019/0000760; GA ČR(CZ) GA20-11140S
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Research Infrastructure: CzechNanoLab II - 90251
Institutional support: RVO:68378271
Keywords : boron-doped diamond (BDD) * pseudo-vertical Schottky barrier diodes (pVSBDs) * ruthenium (Ru) ohmic contact * ruthenium (Ru) Schottky contact
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 2, year: 2022
Method of publishing: Limited access
https://doi.org/10.1002/pssa.202300508
Permanent Link: https://hdl.handle.net/11104/0348945 - 2.0562514 - ÚFE 2023 RIV NL eng J - Journal Article
Tiagulskyi, Stanislav - Yatskiv, Roman - Faitová, Hana - Černohorský, Ondřej - Vaniš, Jan - Grym, Jan
Focused ion beam assisted prototyping of graphene/ZnO devices on Zn-polar and O-polar faces of ZnO bulk crystals.
Physica E: Low-Dimensional Systems and Nanostructures. Roč. 136, February (2022), č. článku 115006. ISSN 1386-9477. E-ISSN 1873-1759
R&D Projects: GA ČR(CZ) GA20-24366S
Institutional support: RVO:67985882
Keywords : Schottky barrier * Graphene * Nanomanipulator * FIB * Surface polarity * ZnO
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.3, year: 2022
Method of publishing: Limited access
https://doi.org/10.1016/j.physe.2021.115006
Permanent Link: https://hdl.handle.net/11104/0334836 - 3.0537851 - ÚFE 2021 RIV US eng J - Journal Article
Yatskiv, Roman - Tiagulskyi, Stanislav - Grym, Jan
Influence of Crystallographic Orientation on Schottky Barrier Formation in Gallium Oxide.
Journal of Electronic Materials. Roč. 49, č. 9 (2020), s. 5133-5137. ISSN 0361-5235. E-ISSN 1543-186X
R&D Projects: GA ČR(CZ) GA17-00546S
Institutional support: RVO:67985882
Keywords : Gallium oxide * Schottky barrier diode * Graphite/beta-Ga2O3
OECD category: Electrical and electronic engineering
Impact factor: 1.938, year: 2020
Method of publishing: Limited access
https://doi.org/10.1007/s11664-020-07996-0
Permanent Link: http://hdl.handle.net/11104/0315682File Download Size Commentary Version Access UFE 0537851.pdf 1 428.8 KB Other require - 4.0507477 - ÚMCH 2020 RIV DE eng J - Journal Article
Knotek, P. - Plecháček, T. - Smolík, J. - Kutálek, P. - Dvořák, F. - Vlček, Milan - Navrátil, J. - Drašar, Č.
Kelvin probe force microscopy of the nanoscale electrical surface potential barrier of metal/semiconductor interfaces in ambient atmosphere.
Beilstein Journal of Nanotechnology. Roč. 10, 15 July (2019), s. 1401-1411. ISSN 2190-4286. E-ISSN 2190-4286
R&D Projects: GA ČR(CZ) GA16-07711S
Institutional support: RVO:61389013
Keywords : Kelvin probe atomic force microscope * nanoinclusion * Schottky barrier
OECD category: Inorganic and nuclear chemistry
Impact factor: 2.612, year: 2019
Method of publishing: Open access
https://www.beilstein-journals.org/bjnano/content/pdf/2190-4286-10-138.pdf
Permanent Link: http://hdl.handle.net/11104/0298458 - 5.0427088 - FZÚ 2015 RIV US eng J - Journal Article
Čermák, Jan - Koide, Y. - Takeuchi, D. - Rezek, Bohuslav
Spectrally dependent photovoltages in Schottky photodiode based on (100) B-doped diamond.
Journal of Applied Physics. Roč. 115, č. 5 (2014), "053105-1"-"053105-6". ISSN 0021-8979. E-ISSN 1089-7550
R&D Projects: GA ČR(CZ) GBP108/12/G108
Grant - others:AVČR(CZ) M100101209
Institutional support: RVO:68378271
Keywords : Schottky barrier * diamond * Kelvin probe force microscopy * surface photovoltage
Subject RIV: BH - Optics, Masers, Lasers
Impact factor: 2.183, year: 2014
Permanent Link: http://hdl.handle.net/11104/0232715 - 6.0396586 - ÚFE 2014 RIV CH eng C - Conference Paper (international conference)
Žďánský, Karel - Yatskiv, Roman - Černohorský, Ondřej - Piksová, K.
EPD of Reverse Micelle Pd and Pt Nanoparticles onto InP and GaN for High-Response Hydrogen Sensors.
ELECTROPHORETIC DEPOSITION: FUNDAMENTALS AND APPLICATIONS IV. Vol. 507. ZURICH: TRANS TECH PUBLICATIONS LTD, 2012 - (Boccaccini, A.; VanDeBiest, O.; Clasen, R.; Dickerson, J.), s. 169-173. ISBN 9783037853795. ISSN 1013-9826.
[4th International Conference on Electrophoretic Deposition: Fundamentals and Applications. Puerto Vallarta (MX), 02.10.2011-07.10.2011]
Institutional support: RVO:67985882
Keywords : Electrophoresis * Metal Nanoparticles * Schottky Barrier
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0224369 - 7.0395144 - ÚFE 2014 RIV GB eng C - Conference Paper (international conference)
Yatskiv, Roman - Grym, Jan
Hydrogen sensing using reduced graphene oxide sheets supported by Pd nanoparticles.
SENSORS & THEIR APPLICATIONS XVII. Vol. 450. BRISTOL: IOP PUBLISHING LTD, 2013 - (Bilas, V.; McConnell, G.; Kyriacou, P.), 012020. ISSN 1742-6588.
[17th Conference in the biennial Sensors and Their Applications. Dubrovnik (HR), 16.09.2013-18.09.2013]
R&D Projects: GA MŠMT LD12014
Institutional support: RVO:67985882
Keywords : Schottky barrier diodes * Graphene * Nanocrystals
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0224287 - 8.0395141 - ÚFE 2014 RIV GB eng J - Journal Article
Grym, Jan - Yatskiv, Roman
Schottky barriers based on metal nanoparticles deposited on InP epitaxial layers.
Semiconductor Science and Technology. Roč. 28, č. 4 (2013). ISSN 0268-1242. E-ISSN 1361-6641
R&D Projects: GA MŠMT LD12014
Institutional support: RVO:67985882
Keywords : Colloidal graphite * Epitaxial growth * Schottky barrier diodes
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 2.206, year: 2013
Permanent Link: http://hdl.handle.net/11104/0223262 - 9.0395132 - ÚFE 2014 RIV GB eng J - Journal Article
Yatskiv, Roman - Grym, Jan
Thermal stability study of semimetal graphite n-InP and n-GaN Schottky diodes.
Semiconductor Science and Technology. Roč. 28, č. 5 (2013). ISSN 0268-1242. E-ISSN 1361-6641
R&D Projects: GA MŠMT LD12014
Institutional support: RVO:67985882
Keywords : Gallium nitride * Schottky barrier diodes * Graphite
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 2.206, year: 2013
Permanent Link: http://hdl.handle.net/11104/0223260File Download Size Commentary Version Access UFE 0395132.pdf 12 508.5 KB Other require - 10.0391737 - FZÚ 2014 RIV GB eng J - Journal Article
Dubecký, F. - Dubecký, M. - Hubík, Pavel - Kindl, Dobroslav - Gombia, E. - Baldini, M. - Nečas, V.
Unexpected current lowering by a low work-funkction metal contact: Mg/SI-GaAs.
Solid-State Electronics. Roč. 82, APR (2013), s. 72-76. ISSN 0038-1101. E-ISSN 1879-2405
Institutional support: RVO:68378271
Keywords : Schottky barrier * low-bias transport * semi-insulating GaAs * low work-function * high resistence * low leakage current * blocking contact
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.514, year: 2013
Permanent Link: http://hdl.handle.net/11104/0220698