Search results
- 1.0539176 - FZÚ 2021 RIV US eng J - Journal Article
Tisbi, E. - Placidi, E. - Magri, R. - Prosposito, P. - Francini, R. - Zaganelli, A. - Cecchi, S. - Zallo, E. - Calarco, R. - Luna, E. - Honolka, Jan - Vondráček, Martin - Colonna, S. - Arciprete, F.
Increasing optical efficiency in the telecommunication bands of strain-engineered Ga(As, Bi) alloys.
Physical Review Applied. Roč. 14, č. 1 (2020), s. 1-14, č. článku 014028. ISSN 2331-7019. E-ISSN 2331-7019
R&D Projects: GA MŠMT EF16_013/0001406
Grant - others:OP VVV - SAFMAT(XE) CZ.02.1.01/0.0/0.0/16_013/0001406
Institutional support: RVO:68378271
Keywords : alloys * III-V semiconductors * single crystal materials * crystal growth * luminescence * optoelectronics
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 4.985, year: 2020
Method of publishing: Limited access
https://doi.org/10.1103/PhysRevApplied.14.014028
Permanent Link: http://hdl.handle.net/11104/0316877 - 2.0506256 - ÚFM 2020 RIV US eng J - Journal Article
Lee, Lok Y. - Frentrup, M. - Vacek, Petr - Kappers, Menno J. - Wallis, David J. - Oliver, Rachel A.
Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEM.
Journal of Applied Physics. Roč. 125, č. 10 (2019), č. článku 105303. ISSN 0021-8979. E-ISSN 1089-7550
R&D Projects: GA MŠMT(CZ) EF16_027/0008056; GA MŠMT(CZ) LQ1601
Institutional support: RVO:68081723
Keywords : Epilayers * Gallium nitride * High resolution transmission electron microscopy * III-V semiconductors * Silicon carbide * Stacking faults * X ray diffraction * Zinc sulfide
OECD category: Electrical and electronic engineering
Impact factor: 2.286, year: 2019
Method of publishing: Open access
http://orca.cf.ac.uk/120129/1/Wallis%20D%20-%20Investigation%20of%20stacking%20faults%20in%20MOVPE-grown%20....pdf
Permanent Link: http://hdl.handle.net/11104/0300842 - 3.0459032 - FZÚ 2017 RIV US eng J - Journal Article
Klenovský, P. - Hemzal, D. - Steindl, P. - Zíková, Markéta - Křápek, V. - Humlíček, J.
Polarization anisotropy of the emission from type-II quantum dots.
Physical Review. B. Roč. 92, č. 24 (2015), 1-5, č. článku 241302. ISSN 1098-0121
Institutional support: RVO:68378271
Keywords : quantum dot * type II heterostructure * polarization anisotropy * III-V semiconductors
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 3.736, year: 2014
Permanent Link: http://hdl.handle.net/11104/0259302 - 4.0438610 - FZÚ 2015 RIV US eng J - Journal Article
Soltani, A. - Stolz, A. - Charrier, J. - Mattalah, M. - Gerbedoen, J.-C. - Barkad, H.A. - Mortet, Vincent - Rousseau, M. - Bourzgui, N. - BenMoussa, A. - De Jaeger, J.-C.
Dispersion properties and low infrared optical losses in epitaxial AlN on sapphire substrate in the visible and infrared range.
Journal of Applied Physics. Roč. 115, č. 16 (2014), "163515-1"-"163515-6". ISSN 0021-8979. E-ISSN 1089-7550
Institutional support: RVO:68378271
Keywords : III-V semiconductors * AlN films * surface scattering * refractive index * optical properties
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 2.183, year: 2014
Permanent Link: http://hdl.handle.net/11104/0242023 - 5.0427123 - FZÚ 2015 RIV US eng J - Journal Article
Hemon, S. - Akjouj, A. - Soltani, A. - Pennec, Y. - El Hassouani, Y. - Talbi, A. - Mortet, Vincent - Djafari-Rouhani, B.
Hypersonic band gap in an AlN-TiN bilayer phononic crystal slab.
Applied Physics Letters. Roč. 104, č. 6 (2014), , "063101-1"-"063101-5". ISSN 0003-6951. E-ISSN 1077-3118
R&D Projects: GA AV ČR(CZ) Fellowship J. E. Purkyně
Grant - others:AV ČR(CZ) Fellowship J. E. Purkyně
Program: Fellowship J. E. Purkyně
Institutional support: RVO:68378271
Keywords : band gap * III-V semiconductors * AIN films * photonic bandgap materials * thin film deposition * band structure * surface acoustic waves * bulk materials
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 3.302, year: 2014
Permanent Link: http://hdl.handle.net/11104/0232738 - 6.0396852 - FZÚ 2014 RIV US eng C - Conference Paper (international conference)
Král, Karel - Menšík, Miroslav
Power-law time decay of the quantum dot photoluminescence intensity.
PHONONS 2012. Melville: AIP, 2012 - (Pipe, K.), s. 79-85. AIP Conference Proceedings, 1506. ISBN 978-0-7354-1124-1. ISSN 0094-243X.
[International Conference on Phonon Scattering in Condensed Matter /14./. Ann Arbor, MI (US), 08.07.2012-12.07.2012]
R&D Projects: GA MŠMT(CZ) OC10007; GA MŠMT LH12186
Institutional support: RVO:68378271 ; RVO:61389013
Keywords : polarons and electron-phonon interactions * quantum dots * III-V semiconductors
Subject RIV: BM - Solid Matter Physics ; Magnetism
http://proceedings.aip.org/resource/2/apcpcs/1506/1/79_1?is
Permanent Link: http://hdl.handle.net/11104/0224531 - 7.0387722 - ÚFE 2013 RIV CZ eng C - Conference Paper (international conference)
Nohavica, Dušan - Grym, Jan - Gladkov, Petar - Hamplová, Marie
LOW SUPERSATURATION OVERGROWTH OF NANOPOROUS GaAs SUBSTRATES.
NANOCON 2012, 4th International Conference Proceedings. Ostrava: TANGER Ltd, 2012. ISBN 978-80-87294-32-1.
[NANOCON 2012. International Conference /4./. Brno (CZ), 23.10.2012-25.10.2012]
R&D Projects: GA ČR GAP108/10/0253
Institutional support: RVO:67985882
Keywords : Porous III-V semiconductors * Electrochemical etching * Pores conversion
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0216684 - 8.0370546 - FZÚ 2012 RIV NL eng J - Journal Article
Proessdorf, A. - Grosse, F. - Romanyuk, Olexandr - Braun, W. - Jenichen, B. - Trampert, A. - Riechert, H.
Interface engineering for improved growth of GaSb on Si(111).
Journal of Crystal Growth. Roč. 213, č. 1 (2011), 401-404. ISSN 0022-0248. E-ISSN 1873-5002
Grant - others:AV CR - DFG(DE) Common Project AV CR - DFG
Institutional research plan: CEZ:AV0Z10100521
Keywords : defects * RHEED * XRD * MBE * antimonides * III-V semiconductors
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.726, year: 2011
Permanent Link: http://hdl.handle.net/11104/0204326 - 9.0368043 - ÚFE 2012 RIV US eng J - Journal Article
Grym, Jan - Procházková, Olga - Yatskiv, Roman - Piksová, K.
Hydrogen sensors based on electrophoretically deposited Pd nanoparticles onto InP.
Nanoscale Research Letters. Roč. 6, č. 392 (2011), 3921-3925. ISSN 1931-7573. E-ISSN 1556-276X
R&D Projects: GA ČR GA102/09/1037; GA AV ČR KJB200670901
Institutional research plan: CEZ:AV0Z20670512
Keywords : nanoparticles * gas sensors * III-V semiconductors
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 2.726, year: 2011
Permanent Link: http://hdl.handle.net/11104/0202514File Download Size Commentary Version Access UFE 0368043.pdf 1 731.9 KB Other require - 10.0365408 - ÚJF 2012 RIV CH eng J - Journal Article
Sofer, Z. - Sedmidubský, D. - Moram, M. - Macková, Anna - Buchal, C. - Hardtdegen, H. - Václavů, M. - Peřina, Vratislav - Groetzschel, R. - Mikulics, M. - Hejtmánek, Jiří - Maryško, Miroslav
Magnetism in GaN layers implanted by La, Gd, Dy and Lu.
Thin Solid Films. Roč. 519, č. 18 (2011), s. 6120-6125. ISSN 0040-6090. E-ISSN 1879-2731
R&D Projects: GA ČR GA104/09/1269; GA ČR GA106/09/0125; GA ČR GA104/09/0621
Institutional research plan: CEZ:AV0Z10480505; CEZ:AV0Z10100521
Keywords : Magnetic semiconductors * III-V semiconductors * Ion implantation * X-ray diffraction * Rutherford backscattering spectroscopy
Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders
Impact factor: 1.890, year: 2011
Permanent Link: http://hdl.handle.net/11104/0200656