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0533057 - ÚFCH JH 2021 RIV DE eng J - Journal Article
Haider, Golam - Wang, Y. H. - Farjana, Jaishmin Sonia - Chiang, Ch.-W. - Frank, Otakar - Vejpravová, J. - Kalbáč, Martin - Chen, Y.-F.
Rippled Metallic-Nanowire/Graphene/Semiconductor Nanostack for a Gate-Tunable Ultrahigh-Performance Stretchable Phototransistor.
Advanced Optical Materials. Roč. 8, č. 19 (2020), č. článku 2000859. ISSN 2195-1071. E-ISSN 2195-1071
R&D Projects: GA ČR(CZ) GX20-08633X; GA MŠMT(CZ) EF16_027/0008355; GA MŠMT(CZ) LTAUSA19001; GA MŠMT EF16_026/0008382
Grant - others:Ministerstvo školství, mládeže a tělovýchovy - GA MŠk(CZ) CZ.02.1.01/0.0/0.0/16_026/0008382
Institutional support: RVO:61388955
Keywords : zinc-oxide nanostructures * hybrid graphene * strain sensors * electronics * photodetectors * responsivity * transistors * skin * mechanics * pressure * gate-tunable phototransistor * single-layer graphene * stretchable phototransistor * ultrahigh responsivity * ZnO nanoparticles
OECD category: Physical chemistry
Impact factor: 9.926, year: 2020
Method of publishing: Limited access
Permanent Link: http://hdl.handle.net/11104/0311556