Search results
- 1.0576333 - ÚFM 2024 RIV US eng J - Journal Article
Ji, Y. - Frentrup, M. - Zhang, X. - Pongrácz, Jakub - Fairclough, S. M. - Liu, Y. - Zhu, T. - Oliver, Rachel A.
Porous pseudo-substrates for InGaN quantum well growth: Morphology, structure, and strain relaxation.
Journal of Applied Physics. Roč. 134, č. 14 (2023), č. článku 145102. ISSN 0021-8979. E-ISSN 1089-7550
Institutional support: RVO:68081723
Keywords : InGaN * MQW * porosification * AFM * XRD * strain relaxation
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.2, year: 2022
Method of publishing: Open access
https://pubs.aip.org/aip/jap/article/134/14/145102/2916034/Porous-pseudo-substrates-for-InGaN-quantum-well
Permanent Link: https://hdl.handle.net/11104/0345962 - 2.0541992 - ÚFM 2022 RIV US eng J - Journal Article
Vacek, Petr - Frentrup, M. - Lee, L. Y. - Massabuau, Fabien C. P. - Kappers, Menno J. - Wallis, David J. - Gröger, Roman - Oliver, Rachel A.
Defect structures in (001) zincblende GaN/3C-SiC nucleation layers.
Journal of Applied Physics. Roč. 129, č. 15 (2021), č. článku 155306. ISSN 0021-8979. E-ISSN 1089-7550
R&D Projects: GA MŠMT(CZ) EF16_027/0008056
Institutional support: RVO:68081723
Keywords : stacking faults * gallium nitride * transmission electron microscopy
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 2.877, year: 2021
Method of publishing: Open access
https://aip.scitation.org/doi/10.1063/5.0036366
Permanent Link: http://hdl.handle.net/11104/0319746 - 3.0509851 - ÚFM 2020 RIV NL eng J - Journal Article
Lee, L.Y. - Frentrup, M. - Vacek, Petr - Massabuau, Fabien C. P. - Kappers, Menno J. - Wallis, David J. - Oliver, Rachel A.
Investigation of MOVPE-grown zincblende GaN nucleation layers on 3C-SiC/Si substrates.
Journal of Crystal Growth. Roč. 524, OCT (2019), č. článku 125167. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA MŠMT(CZ) EF16_027/0008056
Institutional support: RVO:68081723
Keywords : Atomic force microscopy * Nucleation * X-ray diffraction * Metalorganic vapor phase epitaxy * Nitrides * Semiconducting gallium compounds
OECD category: Electrical and electronic engineering
Impact factor: 1.632, year: 2019
Method of publishing: Limited access
https://www.sciencedirect.com/science/article/pii/S0022024819303823?via%3Dihub
Permanent Link: http://hdl.handle.net/11104/0300844 - 4.0506256 - ÚFM 2020 RIV US eng J - Journal Article
Lee, Lok Y. - Frentrup, M. - Vacek, Petr - Kappers, Menno J. - Wallis, David J. - Oliver, Rachel A.
Investigation of stacking faults in MOVPE-grown zincblende GaN by XRD and TEM.
Journal of Applied Physics. Roč. 125, č. 10 (2019), č. článku 105303. ISSN 0021-8979. E-ISSN 1089-7550
R&D Projects: GA MŠMT(CZ) EF16_027/0008056; GA MŠMT(CZ) LQ1601
Institutional support: RVO:68081723
Keywords : Epilayers * Gallium nitride * High resolution transmission electron microscopy * III-V semiconductors * Silicon carbide * Stacking faults * X ray diffraction * Zinc sulfide
OECD category: Electrical and electronic engineering
Impact factor: 2.286, year: 2019
Method of publishing: Open access
http://orca.cf.ac.uk/120129/1/Wallis%20D%20-%20Investigation%20of%20stacking%20faults%20in%20MOVPE-grown%20....pdf
Permanent Link: http://hdl.handle.net/11104/0300842