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0538098 - ÚFE 2021 RIV CH eng J - Journal Article
Tiagulskyi, Stanislav - Yatskiv, Roman - Faitová, Hana - Kučerová, Šárka - Roesel, David - Vaniš, Jan - Grym, Jan - Veselý, J.
Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates.
Nanomaterials. Roč. 10, č. 3 (2020), č. článku 508. E-ISSN 2079-4991
R&D Projects: GA ČR(CZ) GA17-00546S; GA ČR(CZ) GA17-00355S
Institutional support: RVO:67985882
Keywords : ZnO nanorods * Nanoscale heterojunctions * Current-voltage characteristics
OECD category: Electrical and electronic engineering
Impact factor: 5.076, year: 2020
Method of publishing: Open access
https://doi.org/10.3390/nano10030508
Permanent Link: http://hdl.handle.net/11104/0315911