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- 1.0523535 - ÚFE 2020 RIV US eng C - Conference Paper (international conference)
Tiagulskyi, Stanislav - Yatskiv, Roman - Faitová, Hana - Vaniš, Jan - Grym, Jan
Homogeneous Resistive Switching in Individual ZnO Nanorod p-n Junctions.
International Semiconductor Conference (CAS 2019). New York: IEEE, 2019 - (Brezeanu, G.), s. 289-292. ISBN 978-1-7281-1888-8. ISSN 1545-827X.
[42nd International Semiconductor Conference (CAS). Sinaia (RO), 09.10.2019-11.10.2019]
R&D Projects: GA ČR(CZ) GA17-00546S; GA ČR(CZ) GA17-00355S
Institutional support: RVO:67985882
Keywords : Nanoprobe I-V * Nanoscale heterojunctions * FIB
OECD category: Electrical and electronic engineering
Permanent Link: http://hdl.handle.net/11104/0307889File Download Size Commentary Version Access UFE 0523535.pdf 2 230.7 KB Author´s preprint require - 2.0502998 - ÚFE 2019 RIV CZ eng C - Conference Paper (international conference)
Tiagulskyi, Stanislav - Yatskiv, Roman - Grym, Jan - Schenk, Antonín - Roesel, David - Vaniš, Jan - Hamplová, Marie
Electrical properties of nanoscale heterojunctions formed between GaN and ZnO nanorods.
9TH INTERNATIONAL CONFERENCE ON NANOMATERIALS - RESEARCH & APPLICATION (NANOCON 2017). Ostrava: TANGER, 2018, s. 146-151. ISBN 978-80-87294-81-9.
[9th International Conference on Nanomaterials - Research and Application (NANOCON). Brno (CZ), 18.10.2017-20.10.2017]
R&D Projects: GA ČR(CZ) GA17-00546S; GA ČR(CZ) GA15-17044S
Institutional support: RVO:67985882
Keywords : Scanning electron microscope * Hydrothermal growth * In-situ current-voltage measurements
OECD category: Electrical and electronic engineering
Permanent Link: http://hdl.handle.net/11104/0294830