Search results
- 1.0570907 - FZÚ 2024 RIV CZ eng A - Abstract
Hulicius, Eduard - Vaněk, Tomáš - Hospodková, Alice - Blažek, K.
Hybrid detector based on MOVPE grown InGaN/GaN MQW + BGO.
NANOCON 2022 - Book of Abstracts. Ostrava: Tanger Ltd, 2022 - (Zbořil, R.; Váňová, J.). s. 25-25. ISBN 978-80-88365-07-5.
[International Conference on Nanomaterials - Research & Application /14./ NANOCON. 19.10.2022-21.10.2022, Brno]
R&D Projects: GA MŠMT LM2018110; GA MŠMT(CZ) LTAIN19163; GA MŠMT(CZ) EF16_019/0000760
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : MOVPE * quantum wells * scintillator
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Permanent Link: https://hdl.handle.net/11104/0342237 - 2.0520830 - FZÚ 2020 RIV US eng A - Abstract
Vaněk, Tomáš - Hubáček, Tomáš - Hájek, František - Kuldová, Karla - Oswald, Jiří - Pangrác, Jiří - Slavická Zíková, Markéta - Kretková, Tereza - Dominec, Filip - Hospodková, Alice
Luminescence red shift of InGaN/GaN heterostructures by enlargement of V-pits.
Book of Abstracts of the International Conference on Crystal Growth and Epitaxy - ICCGE /19./. CTI Meeting Technology, 2019. ISBN 9780463615836.
[International Conference on Crystal Growth and Epitaxy - ICCGE /19./. 28.07.2019-02.08.2019, Keystone]
R&D Projects: GA MŠMT(CZ) LO1603
Institutional support: RVO:68378271
Keywords : MOVPE * InGaN * quantum well * photoluminescence * cathodoluminescence
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Permanent Link: http://hdl.handle.net/11104/0305492 - 3.0496205 - FZÚ 2019 RIV PL eng A - Abstract
Hospodková, Alice - Hubáček, Tomáš - Zíková, Markéta - Dominec, Filip - Oswald, Jiří - Kuldová, Karla - Hájek, František - Vaněk, Tomáš - Jarý, Vítězslav
Design of InGaN/GaN MQW structure for scintillator applications.
Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. University of Warsaw, 2018. s. 256-256.
[International Symposium on Growth of III-Nitrides ISGN-7. 05.08.2018-10.08.2018, Warsaw]
R&D Projects: GA ČR GA16-11769S
Institutional support: RVO:68378271
Keywords : InGaN/GaN * MQW structure * scintillator
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Permanent Link: http://hdl.handle.net/11104/0289031 - 4.0496184 - FZÚ 2019 RIV PL eng A - Abstract
Vaněk, Tomáš - Hospodková, Alice - Hubáček, Tomáš - Kuldová, Karla - Oswald, Jiří - Pangrác, Jiří - Dominec, Filip - Zíková, Markéta - Vetushka, Aliaksi
Increasing scintillator active region thickness by InGaN/GaN QW number.
Proceedings of the International Symposium on Growth of III-Nitrides ISGN-7. University of Warsaw, 2018. s. 151-151.
[International Symposium on Growth of III-Nitrides ISGN-7. 05.08.2018-10.08.2018, Warsaw]
R&D Projects: GA MŠMT(CZ) LO1603; GA ČR GA16-15569S
Institutional support: RVO:68378271
Keywords : InGaN/GaN * QW number
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Permanent Link: http://hdl.handle.net/11104/0289013