Search results

  1. 1.
    0350664 - ÚPT 2011 RIV CZ eng C - Conference Paper (international conference)
    Mika, Filip - Hovorka, Miloš - Frank, Luděk
    Imaging of dopants under presence of surface ad-layers.
    Proceedings of the 12th International Seminar on Recent Trends in Charged Particle Optics and Surface Physics Instrumentation. Brno: Institute of Scientific Instruments AS CR, v.v.i, 2010 - (Mika, F.), s. 35-36. ISBN 978-80-254-6842-5.
    [International Seminar on Recent Trends in Charged Particle Optics and Surface Physics Instrumentation /12./. Skalský dvůr (CZ), 31.05.2010-04.06.2010]
    R&D Projects: GA ČR GP102/09/P543
    Institutional research plan: CEZ:AV0Z20650511
    Keywords : scanning electron microscopy * semiconductor structures * image contrast * dopant concentration * secondary electron emission
    Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
    http://arl-repository.lib.cas.cz/uloziste_av/UPT-D/cav_un_epca-0350664_01.pdf
    Permanent Link: http://hdl.handle.net/11104/0190604
     
     
  2. 2.
    0350658 - ÚPT 2011 RIV CZ eng C - Conference Paper (international conference)
    Hovorka, Miloš - Konvalina, Ivo - Frank, Luděk
    Mapping of dopants by electron injection.
    Proceedings of the 12th International Seminar on Recent Trends in Charged Particle Optics and Surface Physics Instrumentation. Brno: Institute of Scientific Instruments AS CR, v.v.i, 2010 - (Mika, F.), s. 15-16. ISBN 978-80-254-6842-5.
    [International Seminar on Recent Trends in Charged Particle Optics and Surface Physics Instrumentation /12./. Skalský dvůr (CZ), 31.05.2010-04.06.2010]
    R&D Projects: GA ČR GP102/09/P543; GA AV ČR IAA100650803
    Institutional research plan: CEZ:AV0Z20650511
    Keywords : silicon structures * secondary electron emission * very low energy range * mapping dopants
    Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
    http://arl-repository.lib.cas.cz/uloziste_av/UPT-D/cav_un_epca-0350658_01.pdf
    Permanent Link: http://hdl.handle.net/11104/0190598
     
     
  3. 3.
    0335293 - ÚPT 2011 RIV CZ eng C - Conference Paper (international conference)
    Hovorka, Miloš - Mika, Filip - Frank, Luděk - Mikulík, P.
    Profiling of N-Type Dopants in Silicon Based Structures.
    Proceedings of the 4th Czech-Japan-China Cooperative Symposium on Nanostructure of Advanced Materials and Nanotechnology (CJCS’09). Brno: ISI AS CR, 2009 - (Pokorná, Z.; Mika, F.), s. 14. ISBN 978-80-254-4535-8.
    [CJCS’09 - Czech-Japan-China Cooperative Symposium on Nanostructure of Advanced Materials and Nanotechnology /4./. Brno (CZ), 10.08.2009-14.08.2009]
    R&D Projects: GA ČR GP102/09/P543; GA AV ČR IAA100650803
    Institutional research plan: CEZ:AV0Z20650511
    Keywords : n-type substrate * SEM * PEEM * doping levels
    Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
    Permanent Link: http://hdl.handle.net/11104/0179799
     
     
  4. 4.
    0335263 - ÚPT 2010 RIV AT eng C - Conference Paper (international conference)
    Mika, Filip - Hovorka, Miloš - Frank, Luděk
    Secondary electron contrast in doped semiconductor with presence of a surface ad-layer.
    MC 2009 - Microscopy Conference: First Joint Meeting of Dreiländertagung and Multinational Conference on Microscopy. Graz: Verlag der Technischen Universität, 2009, Vol. 1: 199-200. ISBN 978-3-85125-062-6.
    [MC 2009 - Joint Meeting of Dreiländertagung and Multinational Congress on Microscopy /9./. Graz (AT), 30.08.2009-04.09.2009]
    R&D Projects: GA ČR GP102/09/P543; GA AV ČR IAA100650803
    Institutional research plan: CEZ:AV0Z20650511
    Keywords : dopant contrast * secondary electrons * semiconductor
    Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
    http://www.univie.ac.at/asem/Graz_MC_09/papers/51426.pdf
    Permanent Link: http://hdl.handle.net/11104/0179773
     
     
  5. 5.
    0335261 - ÚPT 2010 RIV AT eng C - Conference Paper (international conference)
    Hovorka, Miloš - Mika, Filip - Frank, Luděk
    Profiling of N-type dopants in silicon structures.
    MC 2009 - Microscopy Conference: First Joint Meeting of Dreiländertagung and Multinational Conference on Microscopy. Graz: Verlag der Technischen Universität, 2009, Vol. 1: 181-182. ISBN 978-3-85125-062-6.
    [MC 2009 - Joint Meeting of Dreiländertagung and Multinational Congress on Microscopy /9./. Graz (AT), 30.08.2009-04.09.2009]
    R&D Projects: GA ČR GP102/09/P543; GA AV ČR IAA100650803
    Institutional research plan: CEZ:AV0Z20650511
    Keywords : silicon * dopants * PEEM * SEM
    Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
    http://www.univie.ac.at/asem/Graz_MC_09/papers/19923.pdf
    Permanent Link: http://hdl.handle.net/11104/0179772
     
     


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