Search results
- 1.0539174 - FZÚ 2021 RIV GB eng J - Journal Article
Mates, Tomáš - Polášek, J. - Mareš, P. - Dubau, M. - Vetushka, Aliaksi - Ledinský, Martin - Fejfar, Antonín - Vyskočil, J.
Growth defects in WC:H layers for tribological applications.
Vacuum. Roč. 178, Aug (2020), s. 1-7, č. článku 109372. ISSN 0042-207X. E-ISSN 1879-2715
R&D Projects: GA MŠk(CZ) EF16_026/0008382; GA MŠk LM2018110; GA TA ČR(CZ) TH03020004
Grant - others:OP VVV - CARAT CZ.02.1.01/0.0/0.0/16_026/0008382
Institutional support: RVO:68378271
Keywords : DLC * PACVD * AFM * SEM * FIB * Raman
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.627, year: 2020
Method of publishing: Limited access
https://doi.org/10.1016/j.vacuum.2020.109372
Permanent Link: http://hdl.handle.net/11104/0316874 - 2.0538662 - FZÚ 2021 RIV CH eng J - Journal Article
Vokoun, David - Klimša, Ladislav - Vetushka, Aliaksi - Duchoň, Jan - Racek, Jan - Drahokoupil, Jan - Kopeček, Jaromír - Yu, Y.-S. - Koothan, N. - Kei, C.C.
Al2O3 and Pt atomic layer deposition for surface modification of NiTi shape memory films.
Coatings. Roč. 10, č. 8 (2020), s. 1-14, č. článku 746. E-ISSN 2079-6412
R&D Projects: GA MŠk(CZ) EF16_019/0000760
Grant - others:AV ČR(CZ) MOST-20-11; OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Program: Bilaterální spolupráce
Institutional support: RVO:68378271
Keywords : NiTi alloy * atomic layer deposition * thin film * Pt nanoparticles
OECD category: Materials engineering
Impact factor: 2.881, year: 2020
Method of publishing: Open access
Permanent Link: http://hdl.handle.net/11104/0316416File Download Size Commentary Version Access 0538662.pdf 0 4.8 MB CC licence Publisher’s postprint open-access - 3.0535316 - FZÚ 2021 RIV US eng J - Journal Article
Křížek, Filip - Kašpar, Zdeněk - Vetushka, Aliaksi - Kriegner, Dominik - Fiordaliso, E.M. - Michalička, J. - Man, O. - Zubáč, Jan - Brajer, Jan - Hills, V.A. - Edmonds, K. W. - Wadley, P. - Campion, R. P. - Olejník, Kamil - Jungwirth, Tomáš - Novák, Vít
Molecular beam epitaxy of CuMnAs.
Physical Review Materials. Roč. 4, č. 1 (2020), s. 1-9, č. článku 014409. ISSN 2475-9953. E-ISSN 2475-9953
R&D Projects: GA ČR(CZ) GX19-28375X; GA MŠk EF16_027/0008215; GA MŠk EF16_013/0001405; GA MŠk(CZ) LM2018096; GA MŠk LM2018110
EU Projects: European Commission(XE) 766566 - ASPIN
Grant - others:MOBILITY FZU(XE) CZ.02.2.69/0.0/0.0/16_027/0008215; OP VVV - LNSM(XE) CZ.02.1.01/0.0/0.0/16_013/0001405
Institutional support: RVO:68378271
Keywords : spintronics * antiferromagnets
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.989, year: 2020
Method of publishing: Limited access
https://journals.aps.org/prmaterials/pdf/10.1103/PhysRevMaterials.4.014409
Permanent Link: http://hdl.handle.net/11104/0313378 - 4.0532847 - FZÚ 2021 RIV NL eng J - Journal Article
Hospodková, Alice - Hájek, František - Pangrác, Jiří - Slavická Zíková, Markéta - Hubáček, Tomáš - Kuldová, Karla - Oswald, Jiří - Vaněk, Tomáš - Vetushka, Aliaksi - Čížek, J. - Liedke, M.O. - Butterling, M. - Wagner, A.
A secret luminescence killer in deepest QWs of InGaN/GaN multiple quantum well structures.
Journal of Crystal Growth. Roč. 536, Apr (2020), s. 1-6, č. článku 125579. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA MŠk LM2015087; GA TA ČR TH02010580; GA MŠk(CZ) LO1603
Institutional support: RVO:68378271
Keywords : quantum wells * defects * impurities * metalorganic vapor phase epitaxy * nitrides
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.797, year: 2020
Method of publishing: Limited access
https://doi.org/10.1016/j.jcrysgro.2020.125579
Permanent Link: http://hdl.handle.net/11104/0311234 - 5.0520842 - FZÚ 2020 RIV LT eng J - Journal Article
Hospodková, Alice - Slavická Zíková, Markéta - Hubáček, Tomáš - Pangrác, Jiří - Kuldová, Karla - Hájek, František - Dominec, Filip - Vetushka, Aliaksi - Hasenöhrl, S.
Improvement of GaN crystalline quality by SiNx layer grown by MOVPE.
Lithuanian Journal of Physics. Roč. 59, č. 4 (2019), s. 179-186. ISSN 1648-8504. E-ISSN 1648-8504
R&D Projects: GA MŠk(CZ) LO1603; GA ČR(CZ) GA16-11769S; GA TA ČR TH02010014
Institutional support: RVO:68378271
Keywords : dislocations * MOVPE * GaN * SiNx * photoluminescence
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 0.966, year: 2019
Method of publishing: Open access
Permanent Link: http://hdl.handle.net/11104/0305500File Download Size Commentary Version Access 0520842.pdf 0 3 MB OA časopis Publisher’s postprint open-access - 6.0507908 - FZÚ 2020 RIV GB eng J - Journal Article
Hladik, Martin - Vetushka, Aliaksi - Fejfar, Antonín - Vázquez, Héctor
Tuning of the gold work function by carborane films studied using density functional theory.
Physical Chemistry Chemical Physics. Roč. 21, č. 11 (2019), s. 6178-6185. ISSN 1463-9076. E-ISSN 1463-9084
R&D Projects: GA TA ČR TH02020628; GA ČR(CZ) GJ17-27338Y; GA MŠk EF16_019/0000760
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : density functional theory * SIESTA code * self-assembled monolayers * carborane * Au surface * work function
OECD category: Electrical and electronic engineering
Impact factor: 3.430, year: 2019
Method of publishing: Limited access
https://doi.org/10.1039/c9cp00346k
Permanent Link: http://hdl.handle.net/11104/0298872 - 7.0505794 - FZÚ 2020 RIV NL eng J - Journal Article
Dominec, Filip - Hospodková, Alice - Hubáček, Tomáš - Zíková, Markéta - Pangrác, Jiří - Kuldová, Karla - Vetushka, Aliaksi - Hulicius, Eduard
Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties.
Journal of Crystal Growth. Roč. 507, Feb (2019), s. 246-250. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA MŠk(CZ) LO1603; GA ČR GA16-15569S
EU Projects: European Commission(XE) 690599 - ASCIMAT
Institutional support: RVO:68378271
Keywords : low dimensional structures * V-pits * metalorganic vapor phase epitaxy * InGaN/GaN quantum wells * GaN buffer layer * scintillators
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.632, year: 2019
Method of publishing: Limited access
https://doi.org/10.1016/j.jcrysgro.2018.11.025
Permanent Link: http://hdl.handle.net/11104/0297183File Download Size Commentary Version Access 0505794.pdf 3 1.1 MB Author’s postprint open-access - 8.0505462 - FZÚ 2020 CZ cze J - Journal Article
Hájková, Zdeňka - Ledinský, Martin - Hývl, Matěj - Vetushka, Aliaksi - Fejfar, Antonín - Řáhová, Jaroslava - Frank, Otakar
2D materiály aneb grafen a jak to bylo dál.
[2D materials: Graphene and beyond.]
Československý časopis pro fyziku. Roč. 69, č. 1 (2019), s. 21-24. ISSN 0009-0700
R&D Projects: GA ČR(CZ) GA17-18702S; GA MŠk LM2015087
Institutional support: RVO:68378271 ; RVO:61388955
Keywords : 2D materials * graphene * heterostructures
OECD category: Nano-materials (production and properties)
Method of publishing: Limited access
Permanent Link: http://hdl.handle.net/11104/0296958File Download Size Commentary Version Access 0505462.pdf 0 477.6 KB Publisher’s postprint require - 9.0502820 - FZÚ 2019 RIV GB eng J - Journal Article
Hubáček, Tomáš - Hospodková, Alice - Kuldová, Karla - Oswald, Jiří - Pangrác, Jiří - Jarý, Vítězslav - Dominec, Filip - Slavická Zíková, Markéta - Hájek, František - Hulicius, Eduard - Vetushka, Aliaksi - Ledoux, G. - Dujardin, C. - Nikl, Martin
Advancement toward ultra-thick and bright InGaN/GaN structures with a high number of QWs.
CrystEngComm. Roč. 21, č. 2 (2019), s. 356-362. ISSN 1466-8033
R&D Projects: GA ČR(CZ) GA16-11769S; GA MŠk(CZ) LO1603
EU Projects: European Commission(XE) 690599 - ASCIMAT
Institutional support: RVO:68378271
Keywords : InGaN * MOVPE * QW number
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.117, year: 2019
Method of publishing: Open access with time embargo
Permanent Link: http://hdl.handle.net/11104/0294704File Download Size Commentary Version Access 0502820.pdf 4 1.7 MB Author’s postprint open-access - 10.0502546 - ÚFCH JH 2020 RIV US eng J - Journal Article
Sampathkumar, Krishna - Androulidakis, Ch. - Koukaras, E. N. - Řáhová, Jaroslava - Drogowska, Karolina - Kalbáč, Martin - Vetushka, Aliaksi - Fejfar, Antonín - Galiotis, C. - Frank, Otakar
Sculpturing graphene wrinkle patterns into compliant substrates.
Carbon. Roč. 146, MAY 2019 (2019), s. 772-778. ISSN 0008-6223. E-ISSN 1873-3891
R&D Projects: GA ČR(CZ) GA17-18702S; GA MŠk(CZ) EF16_026/0008382
EU Projects: European Commission(XE) 696656 - GrapheneCore1
Institutional support: RVO:61388955 ; RVO:68378271
Keywords : graphene * wrinkle patterns * Chemical vapor deposition
OECD category: Physical chemistry; Condensed matter physics (including formerly solid state physics, supercond.) (FZU-D)
Impact factor: 8.821, year: 2019
Method of publishing: Limited access
Permanent Link: http://hdl.handle.net/11104/0294452File Download Size Commentary Version Access 0502546.pdf 4 1.9 MB Publisher’s postprint require