Search results
- 1.0502838 - FZÚ 2019 RIV NL eng J - Journal Article
Hubáček, Tomáš - Hospodková, Alice - Oswald, Jiří - Kuldová, Karla - Pangrác, Jiří - Zíková, Markéta - Hájek, František - Dominec, Filip - Florini, N. - Komninou, Ph. - Ledoux, G. - Dujardin, C.
Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface.
Journal of Crystal Growth. Roč. 507, Feb (2019), s. 310-315. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA MŠMT LM2015087; GA ČR(CZ) GA16-11769S; GA MŠMT(CZ) LO1603
EU Projects: European Commission(XE) 690599 - ASCIMAT
Institutional support: RVO:68378271
Keywords : interfaces * MOVPE * quantum wells * nitrides * scintillators
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.632, year: 2019
Method of publishing: Open access with time embargo
Permanent Link: http://hdl.handle.net/11104/0294724File Download Size Commentary Version Access 0502838.pdf 3 1.3 MB Author’s postprint open-access - 2.0448593 - FZÚ 2016 RIV NL eng J - Journal Article
Zíková, Markéta - Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří - Krčil, Pavel - Hulicius, Eduard - Komninou, Ph. - Kioseoglou, J.
MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 µm.
Journal of Crystal Growth. Roč. 414, Mar (2015), 167-171. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA ČR GA13-15286S; GA MŠMT(CZ) LM2011026
Institutional support: RVO:68378271
Keywords : long emission wavelength * photocurrent * InAs quantum dots * MOVPE * GaAsSb layer
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.462, year: 2015
Permanent Link: http://hdl.handle.net/11104/0250242 - 3.0447828 - FZÚ 2016 RIV NL eng J - Journal Article
Hospodková, Alice - Pangrác, Jiří - Vyskočil, Jan - Zíková, Markéta - Oswald, Jiří - Komninou, Ph. - Hulicius, Eduard
Growth of InAs/GaAs quantum dots covered by GaAsSb in multiple structures studied by reflectance anisotropy spectroscopy.
Journal of Crystal Growth. Roč. 414, Mar (2015), s. 156-160. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA ČR(CZ) GP14-21285P; GA ČR GA13-15286S; GA MŠMT(CZ) LM2011026
Institutional support: RVO:68378271
Keywords : MOVPE * InAs/GaAs MQD * GaAsSb SRL * RAS
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.462, year: 2015
Permanent Link: http://hdl.handle.net/11104/0249602 - 4.0431319 - FZÚ 2015 RIV NL eng J - Journal Article
Dimitrakopulos, G.P. - Bazioti, C. - Grym, Jan - Gladkov, Petar - Hulicius, Eduard - Pangrác, Jiří - Pacherová, Oliva - Komninou, Ph.
Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates.
Applied Surface Science. Roč. 306, Jul (2014), s. 89-93. ISSN 0169-4332. E-ISSN 1873-5584
R&D Projects: GA MŠMT 7AMB12GR034
Institutional support: RVO:68378271 ; RVO:67985882
Keywords : compound semiconductors * InGaAs * porous substrate * misfit dislocations * strain
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 2.711, year: 2014
Permanent Link: http://hdl.handle.net/11104/0235904File Download Size Commentary Version Access UFE 0431319.pdf 7 1.5 MB Other require - 5.0431316 - FZÚ 2015 RIV NL eng J - Journal Article
Hospodková, Alice - Pangrác, Jiří - Zíková, Markéta - Oswald, Jiří - Vyskočil, Jan - Komninou, Ph. - Kioseoglou, J. - Florini, N. - Hulicius, Eduard
Effect of the lower and upper interfaces on the quality of InAs/GaAs quantum dots.
Applied Surface Science. Roč. 301, SI (2014), 173-177. ISSN 0169-4332. E-ISSN 1873-5584
R&D Projects: GA ČR GA13-15286S; GA MŠMT(CZ) LM2011026; GA MŠMT 7AMB12GR034
Institutional support: RVO:68378271
Keywords : quantum dots * InAs * GaAs * GaAsSb * reflectance anisotropy spectroscopy
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 2.711, year: 2014
Permanent Link: http://hdl.handle.net/11104/0235894 - 6.0428559 - ÚFE 2015 RIV GB eng J - Journal Article
Yatskiv, Roman - Grym, Jan - Brus, V.V. - Černohorský, Ondřej - Maryanchuk, P.D. - Bazioti, C. - Dimitrakopulos, G.P. - Komninou, Ph.
Transport properties of metal-semiconductor junctions on n-type InP prepared by electrophoretic deposition of Pt nanoparticles.
Semiconductor Science and Technology. Roč. 29, č. 4 (2014), Article number 045017. ISSN 0268-1242. E-ISSN 1361-6641
R&D Projects: GA MŠMT LD12014
Institutional support: RVO:67985882
Keywords : electrophoretic deposition * Pt nanoparticles * Schottky diodes
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 2.190, year: 2014
Permanent Link: http://hdl.handle.net/11104/0233890File Download Size Commentary Version Access UFE 0428559.pdf 8 996 KB Other require - 7.0428421 - ÚFE 2015 RIV NL eng J - Journal Article
Komninou, Ph. - Gladkov, Petar - Karakostas, Th. - Pangrác, Jiří - Pacherová, Oliva - Vaniš, Jan - Hulicius, Eduard
Structural and photoluminescent properties of low temperature InAs buffer layer grown by MOVPE on GaAs substrates.
Journal of Crystal Growth. -, č. 396 (2014), s. 54-60. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA MŠMT 7AMB12GR034; GA ČR GA13-15286S
Institutional support: RVO:67985882 ; RVO:68378271
Keywords : Structuralproperties * MOVPE * PLcharacterization
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering; BM - Solid Matter Physics ; Magnetism (FZU-D)
Impact factor: 1.698, year: 2014
Permanent Link: http://hdl.handle.net/11104/0233786File Download Size Commentary Version Access UFE 0428421.pdf 9 1.7 MB Other require - 8.0399146 - FZÚ 2014 RIV US eng J - Journal Article
Hospodková, Alice - Oswald, Jiří - Pangrác, Jiří - Zíková, Markéta - Kubištová, Jana - Komninou, Ph. - Kioseoglou, J. - Kuldová, Karla - Hulicius, Eduard
Combined vertically correlated InAs and GaAsSb quantum dots separated by triangular GaAsSb barrier.
Journal of Applied Physics. Roč. 114, č. 17 (2013), "174305-1"-"174305-5". ISSN 0021-8979. E-ISSN 1089-7550
R&D Projects: GA ČR GA13-15286S; GA MŠMT 7AMB12GR034; GA MŠMT(CZ) LM2011026
Institutional support: RVO:68378271
Keywords : quantum dots * metal-organic vapor phase epitaxy * InAs * GaAs * GaAsSb
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 2.185, year: 2013
Permanent Link: http://hdl.handle.net/11104/0226500 - 9.0396578 - ÚFE 2014 RIV NL eng J - Journal Article
Lotsari, A. - Das, A. - Kehagias, Th. - Kotsar, Y. - Monroy, E. - Karakostas, Th. - Gladkov, Petar - Komninou, Ph. - Dimitrakopulos, G.P.
Morphology and origin of V-defects in semipolar (11-22) InGaN.
Journal of Crystal Growth. Roč. 339, č. 1 (2012), s. 1-7. ISSN 0022-0248. E-ISSN 1873-5002
Institutional support: RVO:67985882
Keywords : Crystal structure * Molecular beam epitaxy * Semiconducting indium compounds
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 1.552, year: 2012
Permanent Link: http://hdl.handle.net/11104/0224367 - 10.0325803 - ÚFE 2010 RIV DE eng J - Journal Article
Nohavica, Dušan - Gladkov, Petar - Jarchovský, Zdeněk - Zelinka, Jiří - Komninou, Ph. - Delimitis, A. - Kehagias, Th. - Karakostas, Th.
Micropore modification in InP.
[Modifikace mikroporů v InP.]
Physica Status Solidi A. Roč. 205, č. 11 (2008), s. 2577-2580. ISSN 1862-6300. E-ISSN 1862-6319
Institutional research plan: CEZ:AV0Z20670512
Keywords : Porous semiconductors * semiconductors epitaxial layers
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 1.205, year: 2008
Permanent Link: http://hdl.handle.net/11104/0173102