Search results
- 1.0450973 - FZÚ 2016 PL eng A - Abstract
Zíková, Markéta - Hospodková, Alice - Pangrác, Jiří - Vyskočil, Jan - Hulicius, Eduard - Oswald, Jiří - Komninou, Ph. - Kioseoglou, J.
The metalorganic vapour phase epitaxy growth of AIII BV heterostructures observed by reflection anisotropy spectroscopy.
"Jaszowiec" International School and Conference on the Physics of Semiconductors /44./. Warsaw: Polish Academy of Sciences, 2015. s. 13-13.
["Jaszowiec" International School and Conference on the Physics of Semiconductors /44./. 20.06.2015-25.06.2015, Wisla]
R&D Projects: GA ČR GA13-15286S; GA MŠMT(CZ) LM2011026
Institutional support: RVO:68378271
Keywords : MOVPE * reflectance anisotropy spectroscopy * GaAs
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0252147 - 2.0450021 - FZÚ 2016 ZA eng A - Abstract
Hospodková, Alice - Pangrác, Jiří - Zíková, Markéta - Oswald, Jiří - Krčil, Pavel - Komninou, Ph. - Hulicius, Eduard
Preparation and measurements of MOVPE multiple InAs/GaAs/GaAsSb quantum dot structures for the telecom wavelength region emitted from 1.3 to 1.8 μm.
South African Conference on Photonic Materials /6./. Pretoria: SAIP, 2015 - (Botha, R.). s. 18-18
[South African Conference on Photonic Materials /6./. 04.05.2015-08.05.2015, Mabula Game Lodge]
Institutional support: RVO:68378271
Keywords : quantum dot * band alignment * InAs/GaAs * GaAsSb * MOVPE
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0251402 - 3.0433917 - FZÚ 2015 GR eng A - Abstract
Zíková, Markéta - Hospodková, Alice - Kubištová, Jana - Pangrác, Jiří - Komninou, Ph. - Kioseoglou, J. - Florini, N. - Drbohlav, Ivo
The effect of the lower and upper interface on properties of InAs/GaAs quantum dots.
iib2013 Book of Abstracts. Thessaloniki: Aristotle University of Thessaloniki, 2013 - (Komninou, P.)
[International Conference on Intergranular and Interphase Boundaries in Materials /14./. 23.06.2013-28.06.2013, Halkidiki]
R&D Projects: GA ČR GA13-15286S; GA MŠMT 7AMB12GR034
Institutional support: RVO:68378271
Keywords : interface * quantum dot * MOVPE
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0238106 - 4.0433914 - FZÚ 2015 CH eng A - Abstract
Zíková, Markéta - Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří - Krčil, Pavel - Hulicius, Eduard - Komninou, Ph. - Kioseoglou, J.
MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 µm.
International Conference on Metalorganic Vapor Phase Epitaxy /17./. Lausanne: École Polytechnique Fédérale de Lausanne, 2014 - (Kapon, E.; Rudra, A.). s. 14-14
[International Conference on Metalorganic Vapor Phase Epitaxy /17./. 13.07.2014-18.07.2014, Lausanne]
R&D Projects: GA ČR GA13-15286S
Institutional support: RVO:68378271
Keywords : InAs quantum dots * GaAsSb layer * photocurrent * long emission wavelength * MOVPE
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0238091 - 5.0433688 - FZÚ 2015 CH eng A - Abstract
Hospodková, Alice - Pangrác, Jiří - Vyskočil, Jan - Zíková, Markéta - Oswald, Jiří - Komninou, Ph. - Hulicius, Eduard
Growth of InAs/GaAs quantum dots covered by GaAsSb in multiple structures studied by reflectance anisotropy spectroscopy.
International Conference on Metalorganic Vapor Phase Epitaxy /17./. Lausanne: École Polytechnique Fédérale de Lausanne, 2014 - (Kapon, E.; Rudra, A.). s. 14-14
[International Conference on Metalorganic Vapor Phase Epitaxy /17./. 13.07.2014-18.07.2014, Lausanne]
R&D Projects: GA ČR(CZ) GP14-21285P; GA ČR GA13-15286S
Institutional support: RVO:68378271
Keywords : metalorganic vapor phase epitaxy * InAs/GaAs quantum dots * GaAsSb strain reducing layer * reflectance anisotropy
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0237854 - 6.0398725 - FZÚ 2014 CZ eng A - Abstract
Hulicius, Eduard - Komninou, Ph. - Gladkov, Petar - Karakostas, Th. - Pangrác, Jiří
Structural and photoluminescent properties of low temperature InAs buffer layer grown by MOVPE on GaAs substrates.
NANOCON 2013. 5th International Conference Proceedings. Ostrava: TANGER Ltd, 2013. s. 75-75. ISBN 978-80-87294-44-4.
[NANOCON 2013. International Conference /5./. 16.10.2013-18.10.2013, Brno]
R&D Projects: GA ČR GA13-15286S; GA MŠMT 7AMB12GR034; GA MŠMT(CZ) LM2011026
Institutional support: RVO:68378271 ; RVO:67985882
Keywords : InAs/GaAs heterostructures * MOVPE * structural properties * TEM characterization * PL characterization
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0226162