Search results

  1. 1.
    0376501 - ÚFE 2013 CZ eng A - Abstract
    Grym, Jan - Nohavica, Dušan - Jarchovský, Zdeněk - Piksová, K.
    Electron Microscopy of Porous Semiconductors.
    Mikroskopie 2011. Praha: Československá mikroskopická společnost, 2011 - (Frank, L.; Hozák, P.). s. 44-44
    [Mikroskopie 2011. 17.02.2011-18.02.2011, Nové Město na Moravě]
    R&D Projects: GA ČR GAP108/10/0253
    Institutional research plan: CEZ:AV0Z20670512
    Keywords : electron microscopy * porous semiconductors * semiconductor technology
    Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
    Permanent Link: http://hdl.handle.net/11104/0208882
     
     
  2. 2.
    0304201 - URE-Y 20030073 ES eng A - Abstract
    Procházková, Olga - Zavadil, Jiří - Grym, Jan - Žďánský, Karel
    Novel approaches to LPE preparation of high quality of InP semiconductor layers for radiation detectors.
    Badajoz: FORMATEX, 2003. Book of Abstracts 1st International Meeting on Applied Physics. s. 201
    [APHYS-2003 /1./. 13.10.2003-18.10.2003, Badajoz]
    R&D Projects: GA ČR GA102/03/0379; GA AV ČR KSK1010104 Projekt 04/01:4043
    Institutional research plan: CEZ:AV0Z2067918
    Keywords : rare earth compounds * photoluminescence * Hall effect
    Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
    Permanent Link: http://hdl.handle.net/11104/0114342
     
     
  3. 3.
    0304080 - URE-Y 20020135 CZ eng A - Abstract
    Grym, Jan - Procházková, Olga
    Role of liquid phase epitaxy in preparation of semiconductor materials for radiation detectors.
    Prague: Czech Technical University, 2002. Poster 2002. Book of Exteded Abstracts. s. PE13.1-PE13.2
    [International Student Conference on Electrical Engineering Poster 2002 /6./. 23.05.2002-23.05.2002, Prague]
    R&D Projects: GA AV ČR KSK1010104 Projekt 04/01:4043; GA MŠMT 300106513
    Institutional research plan: CEZ:AV0Z2067918
    Keywords : rare earth elements * liquid phase epitaxial growth * III-V semiconductors
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Permanent Link: http://hdl.handle.net/11104/0114224
     
     
  4. 4.
    0304013 - URE-Y 20020082 HU eng A - Abstract
    Procházková, Olga - Zavadil, Jiří - Žďánský, Karel - Grym, Jan
    Correlation of Pr, Dy and Tb addition with physical properties of InP layers prepared by LPE.
    Budapest: Rese, 2002. Book of Abstracts EXMATEC'2002. s. 149
    [EXMATEC 2002 - International Workshop on Expert Evaluation & Control of Compounds Semiconductor Materials & Technologies /6./. 26.05.2002-29.05.2002, Budapest]
    R&D Projects: GA AV ČR KSK1010104 Projekt 04/01:4043
    Institutional research plan: CEZ:AV0Z2067918
    Keywords : rare earth compounds * semiconductors * liqiud phase epitaxy
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Permanent Link: http://hdl.handle.net/11104/0114157
     
     
  5. 5.
    0303982 - URE-Y 20020008 PL eng A - Abstract
    Grym, Jan - Procházková, Olga
    Modification of propertis of InP-based semiconductor materials by REE.
    Warsaw: Zaklad Graficzny UW, 2002. XXXI International School on the Physics of Semiconducting Compounds Jaszowiec 2002. Program & Abstracts. s. 63
    [International School on the Physics of Semiconducting Compounds Jaszowiec /31./. 07.06.2002-14.06.2002, Jaszowiec]
    R&D Projects: GA AV ČR KSK1010104 Projekt 04/01:4043
    Institutional research plan: CEZ:AV0Z2067918
    Keywords : semiconductor materials * rare earth elements * epitaxial growth * liquid phase epitaxial growth * III-V semiconductors
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Permanent Link: http://hdl.handle.net/11104/0114126
     
     
  6. 6.
    0303870 - URE-Y 20010052 PL eng A - Abstract
    Grym, Jan - Procházková, Olga - Zavadil, Jiří - Žďánský, Karel
    The comparison of the influence of Pr, Nd and Tb on the characteristics of InP epitaxial layers.
    Warsaw: Polish Academy of Sciences, Institute of Physics, 2001. Jaszowiec 2001. s. 59
    [International School on the Physics of Semiconducting Compounds /30./. 01.06.2001-08.06.2001, Ustron-Jaszowiec]
    R&D Projects: GA ČR GA102/99/0341; GA AV ČR KSK1010601 Projekt 7/96/K:4073
    Institutional research plan: CEZ:AV0Z2067918
    Keywords : liquid phase epitaxial growth * rare earth compounds * III-V semiconductors
    Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
    Permanent Link: http://hdl.handle.net/11104/0114054
     
     
  7. 7.
    0303869 - URE-Y 20010050 CZ eng A - Abstract
    Grym, Jan - Procházková, Olga - Zavadil, Jiří - Žďánský, Karel
    Role of rare earth elements in growth process of InP LPE layers.
    Prague: Czech Technical University, 2001. Poster 2001. Book of Extended Abstract. s. NS16.1-NS16.2
    [International Student Conference on Electrical Engineering /5./. 24.05.2001, Prague]
    R&D Projects: GA ČR GA102/99/0341; GA AV ČR KSK1010601 Projekt 7/96/K:4073
    Institutional research plan: CEZ:AV0Z2067918
    Keywords : liquid phase epitaxial growth * rare earth compounds * III-V semiconductors
    Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
    Permanent Link: http://hdl.handle.net/11104/0114053
     
     
  8. 8.
    0303825 - URE-Y 20010051 SK eng A - Abstract
    Grym, Jan - Procházková, Olga - Žďánský, Karel - Zavadil, Jiří
    Novel approaches to LPE preparation of InP-based semiconductor layers.
    [Bratislava]: [STU], 2001. ISBN 80-85330-90-3. DMS-RE 2001 Development of Materials Science in Research and Education. - (Koman, M.; Mikloš, D.). s. 41-42
    [Development of Materials Science in Research and Education - DMS-RE 2001 /11./. 09.09.2001-13.09.2001, Kežmarské Žĺaby]
    R&D Projects: GA ČR GA102/99/0341; GA AV ČR KSK1010601 Projekt 7/96/K:4073
    Institutional research plan: CEZ:AV0Z2067918
    Keywords : liquid phase epitaxial growth * rare earth compounds * III-V semiconductors
    Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
    Permanent Link: http://hdl.handle.net/11104/0114009
     
     
  9. 9.
    0303821 - URE-Y 20010079 IT eng A - Abstract
    Procházková, Olga - Zavadil, Jiří - Žďánský, Karel - Grym, Jan
    Preparation of InP-based semiconductor materials with low density of defects: effect of Nd, Tb and Yb addition.
    [Parma]: [Instituto CNRMASPEC], 2001. DRIP IX - 9th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors. Program and abstracts. s. 37
    [DRIP /9./. 24.09.2001-28.09.2001, Rimini]
    R&D Projects: GA ČR GA102/99/0341
    Institutional research plan: CEZ:AV0Z2067918
    Keywords : liquid phase epitaxial growth * rare earth metals * semiconductor materials
    Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
    Permanent Link: http://hdl.handle.net/11104/0114005
     
     
  10. 10.
    0105946 - URE-Y 20040102 PL eng A - Abstract
    Procházková, Olga - Grym, Jan - Zavadil, Jiří
    Preparation of high quality InP thin layers by modification of microchannel luquid phase epitaxial technique.
    International Symposium on 50th Anniversary of the Death of Prof. Dr. Jan Czochralski. Toruň: Polish Society for Crystal Growth, 2003. s. 1.
    [International Symposium on 50th Anniversary of the Death of Prof. Dr. Jan Czochralski. 26.04.2003-27.04.2003, Toruň and Kcynia]
    R&D Projects: GA ČR(CZ) GA102/03/0379; GA AV ČR(CZ) KSK1010104
    Keywords : rare earth compounds * photoluminescence * Hall effect
    Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
    Permanent Link: http://hdl.handle.net/11104/0013134
     
     

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