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  1. 1.
    0575223 - FZÚ 2024 RIV GB eng J - Journal Article
    Miliaieva, Daria - Djoumessi, A.S. - Čermák, Jan - Kolářová, Kateřina - Schaal, M. - Otto, F. - Shagieva, Ekaterina - Romanyuk, Olexandr - Pangrác, Jiří - Kuliček, J. - Nádaždy, V. - Stehlík, Štěpán - Kromka, Alexander - Hoppe, H. - Rezek, B.
    Absolute energy levels in nanodiamonds of different origins and surface chemistries.
    Nanoscale Advances. Roč. 5, č. 17 (2023), s. 4402-4414. ISSN 2516-0230. E-ISSN 2516-0230
    R&D Projects: GA MŠMT LM2023051; GA ČR(CZ) GC20-20991J
    Institutional support: RVO:68378271
    Keywords : nanodiamonds * energy levels * surface chemistry
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
    Impact factor: 4.7, year: 2022
    Method of publishing: Open access
    Permanent Link: https://hdl.handle.net/11104/0345121
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    0575223.pdf01.8 MBCC licencePublisher’s postprintopen-access
     
     
  2. 2.
    0574605 - FZÚ 2024 RIV US eng J - Journal Article
    Hájek, František - Jarý, Vítězslav - Hubáček, Tomáš - Dominec, Filip - Hospodková, Alice - Kuldová, Karla - Oswald, Jiří - Pangrác, Jiří - Vaněk, Tomáš - Buryi, Maksym - Ledoux, G. - Dujardin, C.
    Donor-acceptor pairs recombination as the origin of the emission shift in InGaN/GaN scintillator heterostructures doped with Zn.
    ECS Journal of Solid State Science and Technology. Roč. 12, č. 6 (2023), č. článku 066004. ISSN 2162-8769. E-ISSN 2162-8777
    R&D Projects: GA ČR(CZ) GJ20-05497Y
    Institutional support: RVO:68378271
    Keywords : nitrides * scintillator * defects * luminescence
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
    Impact factor: 2.2, year: 2022
    Method of publishing: Open access
    Permanent Link: https://hdl.handle.net/11104/0346913
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    0574605.pdf02.3 MBlicence CC BY-NC-NDPublisher’s postprintopen-access
     
     
  3. 3.
    0572001 - FZÚ 2024 RIV US eng J - Journal Article
    Hospodková, Alice - Hájek, František - Hubáček, Tomáš - Gedeonová, Zuzana - Hubík, Pavel - Hývl, Matěj - Pangrác, Jiří - Dominec, Filip - Košutová, Tereza
    Electron transport properties in high electron mobility transistor structures improved by V-Pit formation on the AlGaN/GaN interface.
    ACS Applied Materials and Interfaces. Roč. 15, č. 15 (2023), s. 19646-19652. ISSN 1944-8244. E-ISSN 1944-8252
    R&D Projects: GA MŠMT(CZ) LTAIN19163; GA ČR(CZ) GF22-28001K; GA MŠMT LM2023051
    Institutional support: RVO:68378271
    Keywords : HEMT * GaN * AlGaN * metal-organic vapor phase epitaxy * dislocations * electron mobility
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
    Impact factor: 9.5, year: 2022
    Method of publishing: Open access
    Permanent Link: https://hdl.handle.net/11104/0342845
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    0572001.pdf04.8 MBCC LicencePublisher’s postprintopen-access
     
     
  4. 4.
    0570390 - FZÚ 2024 RIV NL eng J - Journal Article
    Hubáček, Tomáš - Kuldová, Karla - Gedeonová, Zuzana - Hájek, František - Košutová, Tereza - Banerjee, Swarnendu - Hubík, Pavel - Pangrác, Jiří - Vaněk, Tomáš - Hospodková, Alice
    Impact of Ge doping on MOVPE grown InGaN layers.
    Journal of Crystal Growth. Roč. 604, Feb (2023), č. článku 127043. ISSN 0022-0248. E-ISSN 1873-5002
    R&D Projects: GA MŠMT LM2018110; GA MŠMT(CZ) LTAIN19163; GA ČR(CZ) GJ20-05497Y
    Institutional support: RVO:68378271
    Keywords : germanium * MOVPE * InGaN * nitrides * photoluminescence * doping
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
    Impact factor: 1.8, year: 2022
    Method of publishing: Limited access
    https://doi.org/10.1016/j.jcrysgro.2022.127043
    Permanent Link: https://hdl.handle.net/11104/0341707
     
     
  5. 5.
    0569330 - FZÚ 2024 RIV NL eng J - Journal Article
    Hospodková, Alice - Hájek, František - Hubáček, Tomáš - Gedeonová, Zuzana - Hubík, Pavel - Mareš, Jiří J. - Pangrác, Jiří - Dominec, Filip - Kuldová, Karla - Hulicius, Eduard
    Electron mobility in GaN layers and HEMT structure optimized by MOVPE technological parameters.
    Journal of Crystal Growth. Roč. 605, March (2023), č. článku 127061. ISSN 0022-0248. E-ISSN 1873-5002
    R&D Projects: GA MŠMT LM2018110; GA MŠMT(CZ) LTAIN19163; GA ČR(CZ) GF22-28001K
    Institutional support: RVO:68378271
    Keywords : HEMT * GAN * metalorganic vapor phase epitaxy
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
    Impact factor: 1.8, year: 2022
    Method of publishing: Limited access
    https://doi.org/10.1016/j.jcrysgro.2022.127061
    Permanent Link: https://hdl.handle.net/11104/0342034
     
     
  6. 6.
    0562801 - FZÚ 2023 RIV CH eng J - Journal Article
    Hospodková, Alice - Čížek, J. - Hájek, František - Hubáček, Tomáš - Pangrác, Jiří - Dominec, Filip - Kuldová, Karla - Batysta, Jan - Liedke, M.O. - Hirschmann, E. - Butterling, M. - Wagner, A.
    Relation between Ga vacancies, photoluminescence, and growth conditions of MOVPE-prepared GaN layers.
    Materials. Roč. 15, č. 19 (2022), č. článku 6916. E-ISSN 1996-1944
    R&D Projects: GA MŠMT LM2018110; GA ČR(CZ) GF22-28001K; GA MŠMT(CZ) EF16_019/0000760
    Grant - others:AV ČR(CZ) PAN-20-19; OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
    Program: Bilaterální spolupráce
    Institutional support: RVO:68378271
    Keywords : GaN * defects * positron annihilation spectroscopy * photoluminescence * MOVPE
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
    Impact factor: 3.4, year: 2022
    Method of publishing: Open access
    Permanent Link: https://hdl.handle.net/11104/0334994
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    0562801.pdf04 MBCC licencePublisher’s postprintopen-access
     
     
  7. 7.
    0543533 - FZÚ 2022 RIV GB eng J - Journal Article
    Hájek, František - Hospodková, Alice - Hubík, Pavel - Gedeonová, Zuzana - Hubáček, Tomáš - Pangrác, Jiří - Kuldová, Karla
    Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design.
    Semiconductor Science and Technology. Roč. 36, č. 7 (2021), č. článku 075016. ISSN 0268-1242. E-ISSN 1361-6641
    R&D Projects: GA MŠMT LM2018110; GA MŠMT(CZ) LTAIN19163; GA MŠMT(CZ) EF16_019/0000760
    Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
    Institutional support: RVO:68378271
    Keywords : HEMT * GaN * metalorganic vapor phase epitaxy
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
    Impact factor: 2.048, year: 2021
    Method of publishing: Open access with time embargo
    Permanent Link: http://hdl.handle.net/11104/0320728
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    0543533.pdf11.1 MBAuthor’s postprintopen-access
     
     
  8. 8.
    0542805 - FZÚ 2022 RIV NL eng J - Journal Article
    Vaněk, Tomáš - Hájek, František - Dominec, Filip - Hubáček, Tomáš - Kuldová, Karla - Pangrác, Jiří - Košutová, Tereza - Kejzlar, P. - Bábor, P. - Lachowski, A. - Hospodková, Alice
    Luminescence redshift of thick InGaN/GaN heterostructures induced by the migration of surface adsorbed atoms.
    Journal of Crystal Growth. Roč. 565, July (2021), č. článku 126151. ISSN 0022-0248. E-ISSN 1873-5002
    R&D Projects: GA MŠMT(CZ) EF16_019/0000760; GA MŠMT LM2018110; GA TA ČR(CZ) FW03010298
    Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
    Institutional support: RVO:68378271
    Keywords : characterization * growth models * MOVPE * nitrides * scintillators
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
    Impact factor: 1.830, year: 2021
    Method of publishing: Open access with time embargo
    Permanent Link: http://hdl.handle.net/11104/0320191
    FileDownloadSizeCommentaryVersionAccess
    0542805.pdf01.1 MBAuthor’s postprintopen-access
     
     
  9. 9.
    0542725 - FZÚ 2022 RIV NL eng J - Journal Article
    Hájek, František - Hospodková, Alice - Hubáček, Tomáš - Oswald, Jiří - Pangrác, Jiří - Dominec, Filip - Horešovský, Robert - Kuldová, Karla
    Depth profile of acceptor concentration in InGaN/GaN multiple quantum wells.
    Journal of Luminescence. Roč. 236, Aug (2021), č. článku 118127. ISSN 0022-2313. E-ISSN 1872-7883
    R&D Projects: GA MŠMT(CZ) EF16_019/0000760; GA TA ČR(CZ) FW03010298
    Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
    Institutional support: RVO:68378271
    Keywords : nitrides * impurity * SIMS * InGaN/GaN
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
    Impact factor: 4.171, year: 2021
    Method of publishing: Open access with time embargo
    Permanent Link: http://hdl.handle.net/11104/0320090
    FileDownloadSizeCommentaryVersionAccess
    0542725.pdf41 MBAuthor’s postprintopen-access
     
     
  10. 10.
    0541737 - FZÚ 2022 RIV US eng J - Journal Article
    Stehlík, Štěpán - Henych, Jiří - Štenclová, Pavla - Král, Robert - Zemenová, Petra - Pangrác, Jiří - Vaňek, O. - Kromka, Alexander - Rezek, B.
    Size and nitrogen inhomogeneity in detonation and laser synthesized primary nanodiamond particles revealed via salt-assisted deaggregation.
    Carbon. Roč. 171, Jan (2021), s. 230-239. ISSN 0008-6223. E-ISSN 1873-3891
    R&D Projects: GA MŠMT(CZ) EF16_019/0000760; GA MŠMT LM2018110; GA ČR(CZ) GJ18-11711Y
    Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
    Institutional support: RVO:68378271 ; RVO:61388980
    Keywords : detonation nanodiamond * salt-assisted ultrasonic deaggregation * size distribution * colloidal solution * nitrogen * inhomogeneity * surface chemistry
    OECD category: Nano-materials (production and properties); Inorganic and nuclear chemistry (UACH-T)
    Impact factor: 11.307, year: 2021
    Method of publishing: Limited access
    https://doi.org/10.1016/j.carbon.2020.09.026
    Permanent Link: http://hdl.handle.net/11104/0319266
     
     

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