Search results
- 1.0561007 - FZÚ 2023 RIV CZ eng C - Conference Paper (international conference)
Hulicius, Eduard - Hájek, František - Hospodková, Alice - Hubík, Pavel - Gedeonová, Zuzana - Hubáček, Tomáš - Pangrác, Jiří - Kuldová, Karla
General overview of GaN devices and transport properties of AlGaN/GaN HEMT structures - impact of dislocation density and improved design.
NANOCON 2021 - Conference proceedings. Ostrava: Tanger Ltd., 2021, s. 17-22. ISBN 978-80-88365-00-6. ISSN 2694-930X.
[International Conference on Nanomaterials - Research & Application /13./ NANOCON. Brno (CZ), 20.10.2021-22.10.2021]
R&D Projects: GA MŠMT LM2018110; GA MŠMT(CZ) LTAIN19163; GA MŠMT(CZ) EF16_019/0000760
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : GaN devices * HEMT * MOVPE epitaxy * dislocation
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
https://www.confer.cz/nanocon/2021/4309-general-over-view-of-gan-devices-and-transport-properties-of-algan-gan-hemt-structures-impact-of-dislocation-density-and-improved-design
Permanent Link: https://hdl.handle.net/11104/0333759 - 2.0560717 - FZÚ 2023 RIV US eng C - Conference Paper (international conference)
Dubecký, F. - Hubík, Pavel - Vanko, G. - Zaťko, B. - Boháček, P. - Sekáčová, M. - Šagátová, A. - Nečas, V.
Investigation of Mg contact on SI-GaAs.
Proceedings of the 13th International Conference on Advanced Semiconductor Devices And Microsystems. New York: IEEE, 2020 - (Vanko, G.; Izsák, T.), s. 147-151. ISBN 978-1-7281-9776-0.
[International Conference on Advanced Semiconductor Devices And Microsystems - (ASDAM) /13./. Smolenice (SK), 11.10.2020-14.10.2020]
Institutional support: RVO:68378271
Keywords : semi-insulating GaAs * contacts * magnesium * electron transport
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Permanent Link: https://hdl.handle.net/11104/0333572 - 3.0522082 - FZÚ 2020 RIV CZ eng C - Conference Paper (international conference)
Mortet, Vincent - Lambert, Nicolas - Hubík, Pavel - Soltani, A.
Model of carrier multiplication due to impurity impact ionization in boron-doped diamond.
NANOCON 2018 : Conference Proceedings of the International Conference on Nanomaterials - Research & Application /10./. Ostrava: Tanger Ltd., 2019 - (Shrbená, J.), s. 41-45. ISBN 978-80-87294-89-5.
[NANOCON 2018 -International Conference on Nanomaterials - Research and Application /10./. Brno (CZ), 17.10.2018-19.10.2018]
R&D Projects: GA ČR GA17-05259S; GA AV ČR(CZ) Fellowship J. E. Purkyně
Grant - others:AV ČR(CZ) Fellowship J. E. Purkyně
Program: Fellowship J. E. Purkyně
Institutional support: RVO:68378271
Keywords : Boron-doped diamond * semiconductor * carrier multiplication coefficient * impurity impact ionization
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
https://www.nanocon.eu/files/uploads/01/NANOCON2018%20-%20Conference%20Proceedings_content.pdf
Permanent Link: http://hdl.handle.net/11104/0306583 - 4.0521995 - FZÚ 2020 RIV US eng C - Conference Paper (international conference)
Dubecký, F. - Kindl, Dobroslav - Hubík, Pavel - Mičušík, M. - Boháček, P. - Zaťko, B. - Gombia, E. - Kováč, J. - Nečas, V.
Role of contacts in metal/semi-insulating GaAs/metal structures: Symmetrical geometry.
APCOM 2019. New York: American Institute of Physics Inc., 2019 - (Jamnicky, I.; Vajda, J.; Sitek, J.), s. 1-4, č. článku 020010. ISBN 9780735418738.
[International Conference on Applied Physics of Condensed Matter /25./. Štrbské Pleso (SK), 19.06.2019-21.06.2019]
Institutional support: RVO:68378271
Keywords : SI-GaAs * heterojunction * I-V characteristics * capacitance
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
https://printorders.aip.org/proceedings/2131
Permanent Link: http://hdl.handle.net/11104/0306535 - 5.0518038 - FZÚ 2020 RIV SG eng C - Conference Paper (international conference)
Krečmarová, M. - Vandenryt, T. - Gulka, M. - Burgeois, E. - Fekete, Ladislav - Hubík, Pavel - Thoelen, R. - Mortet, Vincent - Nesládek, M.
Microfluidic diamond biosensor using NV centre charge state detection.
World Congress on Medical Physics and Biomedical Engineering 2018. Singapore: Springer, 2019 - (Lhotská, L.; Súkupová, L.; Lacković, I.; Ibbott, G.), s. 27-31. IFMBE Proceedings, 68/3. ISBN 978-981-10-9022-6. ISSN 1680-0737.
[World Congress on Medical Physics and Biomedical Engineering 2018. Prague (CZ), 03.06.2018-08.06.2018]
R&D Projects: GA AV ČR(CZ) Fellowship J. E. Purkyně
Grant - others:AV ČR(CZ) Fellowship J. E. Purkyně
Program: Fellowship J. E. Purkyně
Institutional support: RVO:68378271
Keywords : nitrogen vacancy * diamond * microfluidics
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Permanent Link: http://hdl.handle.net/11104/0303285 - 6.0486629 - FZÚ 2018 RIV US eng C - Conference Paper (international conference)
Dubecký, F. - Vanko, G. - Kindl, Dobroslav - Hubík, Pavel - Gombia, E. - Boháček, P. - Sekáčová, M. - Zat'ko, B.
Investigation of metal contacts on semi-insulating GaAs: physics, technology and applications.
Proceedings of the 11th International Conference on Advanced Semiconductor Devices and Microsystems. New York: IEEE Inc., 2016 - (Haščík, Š.; Dzuba, J.; Vanko, G.), s. 219-222, č. článku 7805934. ISBN 978-1-5090-3083-5. ISSN 2475-2916.
[International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) /11./. Smolenice (SK), 13.11.2016-16.11.2016]
Institutional support: RVO:68378271
Keywords : radiation detectors * performance * metalization * MgO
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
http://ieeexplore.ieee.org/document/7805934/
Permanent Link: http://hdl.handle.net/11104/0281383 - 7.0464790 - FZÚ 2018 RIV CZ eng C - Conference Paper (international conference)
Mortet, Vincent - Fekete, Ladislav - Ashcheulov, Petr - Taylor, Andrew - Hubík, Pavel - Trémouilles, D. - Bedel-Pereira, E.
(100) substrate processing optimization for fabrication of smooth boron doped epitaxial diamond layer by PE CVD.
NANOCON 2014. 6th International conference proceedings. Ostrava: TANGER, 2015, s. 115-119. ISBN 978-80-87294-53-6.
[International Conference NANOCON /6./. Brno (CZ), 05.11.2014-07.11.2014]
R&D Projects: GA ČR GA13-31783S
Institutional support: RVO:68378271
Keywords : doping * PE CVD * diamond * surface treatment * thin film
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Permanent Link: http://hdl.handle.net/11104/0263568 - 8.0440049 - FZÚ 2015 RIV SK eng C - Conference Paper (international conference)
Dubecký, F. - Oswald, Jiří - Kindl, Dobroslav - Hubík, Pavel - Gombia, E. - Šagátová, A. - Boháček, P. - Sekáčová, M. - Nečas, V. - Mudroň, J.
Photocurrent spectroscopy of semi-insulating GaAs M-S-M diodes with a new contact metallization.
Proceedings of the 20th International Conference on Applied Physics of Condensed Matter. Bratislava: FEI STU, 2014 - (Vajda, J.; Jamnický, I.), s. 214-218. ISBN 978-80-227-4179-8.
[International Conference on Applied Physics of Condensed Matter /20./. Štrbské Pleso (SK), 25.06.2014-27.06.2014]
Institutional support: RVO:68378271
Keywords : current-voltage measurements * photocurrent spectroscopy * GaAs
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0243195 - 9.0439987 - FZÚ 2015 RIV SK eng C - Conference Paper (international conference)
Dubecký, F. - Zat'ko, B. - Vanko, G. - Hubík, Pavel - Oswald, Jiří - Kindl, Dobroslav - Gombia, E. - Kováč, J. - Šagátová, A. - Nečas, V.
M/SI-GaAs/M diode: Role of the metal contact in electrical transport, α-particle and photon detection.
ASDAM 2014- Conference Proceedings: The 10th International Conference on Advanced Semiconductor Devices and Microsystems. Bratislava: Slovak University of Technology, 2014 - (Breza, J.; Donoval, D.; Vavrinsky, E.), s. 49-52. ISBN 978-1-4799-5474-2.
[International Conference on Advanced Semiconductor Devices and Microsystems /10./. Smolenice (SK), 20.10.2014-22.10.2014]
Institutional support: RVO:68378271
Keywords : current-voltage measurements * GaAs * radiation detectors
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0243147 - 10.0425745 - FZÚ 2014 RIV US eng C - Conference Paper (international conference)
Dubecký, F. - Kováč, J. - Kováč jr., J. - Zat'ko, B. - Oswald, Jiří - Hubík, Pavel - Kindl, Dobroslav - Vanko, G. - Gombia, E. - Ferrari, C. - Boháček, P. - Šagátová, A. - Nečas, V. - Sekáčová, M.
4H-SiC and novel SI GaAs-based M-S-M radiation hard photodetectors applicable in UV, EUV and soft X-ray detection: Design, technology and performance testing.
Damage to VUV, EUV, and X-ray Optics IV; and EUV and X-ray Optics: Synergy between Laboratory and Space III. Bellingham: SPIE, 2013 - (Juha, L.; Bajt, S.; London, R.; Hudec, R.; Pína, L.). Proceedings of SPIE, 8777. ISBN 9780819495792.
[Damage to VUV, EUV, and X-ray Optics IV; and EUV and X-ray Optics: Synergy between Laboratory and Space III. Praha (CZ), 15.04.2013-18.04.2013]
Institutional support: RVO:68378271
Keywords : 4H-SiC * EUV * photocurrent spectroscopy * semi-insulating GaAs * UV * X-ray detector
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0231558