Search results
- 1.0571931 - FZÚ 2024 RIV CH eng J - Journal Article
Sládek, Juraj - Hlinomaz, Kryštof - Mirza, M. Inam - Levy, Yoann - Derrien, Thibault - Cimrman, Martin - Nagisetty, S.S. - Čermák, Jan - Stuchlíková, The-Ha - Stuchlík, Jiří - Bulgakova, Nadezhda M.
Highly regular LIPSS on thin molybdenum films: optimization and generic criteria.
Materials. Roč. 16, č. 7 (2023), č. článku 2883. E-ISSN 1996-1944
R&D Projects: GA MŠMT EF15_003/0000445; GA MŠMT EF15_006/0000674
Grant - others:OP VVV - BIATRI(XE) CZ.02.1.01/0.0/0.0/15_003/0000445; OP VVV - HiLASE-CoE(XE) CZ.02.1.01/0.0/0.0/15_006/0000674
Institutional support: RVO:68378271
Keywords : laser-induced periodic surface structures * highly regular LIPSS * thin film * molybdenum
OECD category: Optics (including laser optics and quantum optics)
Impact factor: 3.4, year: 2022
Method of publishing: Open access
Permanent Link: https://hdl.handle.net/11104/0342825File Download Size Commentary Version Access 0571931.pdf 0 1.9 MB CC Licence Publisher’s postprint open-access - 2.0539179 - FZÚ 2021 RIV GB eng J - Journal Article
Hývl, Matěj - Müller, Martin - Stuchlíková, The-Ha - Stuchlík, Jiří - Šilhavík, Martin - Kočka, Jan - Fejfar, Antonín - Červenka, Jiří
Nucleation and growth of metal-catalyzed silicon nanowires under plasma.
Nanotechnology. Roč. 31, č. 22 (2020), s. 1-11, č. článku 225601. ISSN 0957-4484. E-ISSN 1361-6528
R&D Projects: GA MŠMT LM2015087; GA MŠMT(CZ) EF16_019/0000760; GA ČR GA16-12355S
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : nanowire * silicon * growth mechanism * catalyst * plasma * PECVD * nucleation
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.874, year: 2020
Method of publishing: Limited access
https://doi.org/10.1088/1361-6528/ab76ef
Permanent Link: http://hdl.handle.net/11104/0316879 - 3.0539099 - FZÚ 2021 RIV FR eng J - Journal Article
Remeš, Zdeněk - Stuchlík, Jiří - Stuchlíková, The-Ha - Kupčík, Jaroslav - Mortet, Vincent - Taylor, Andrew - Ashcheulov, Petr - Volodin, V.A.
Electroluminescence of thin film p-i-n diodes based on a-SiC:H with integrated Ge nanoparticles star.
European Physical Journal-Applied Physics. Roč. 88, č. 3 (2020), s. 1-6, č. článku 30302. ISSN 1286-0042. E-ISSN 1286-0050
R&D Projects: GA MŠMT(CZ) EF16_019/0000760; GA ČR GC19-02858J
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : CVD * hydrogenated amorphous silicone carbide * Ge nanoparticles * thin film diodes * electroluminescence
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 0.993, year: 2020
Method of publishing: Limited access
https://doi.org/10.1051/epjap/2020190253
Permanent Link: http://hdl.handle.net/11104/0316845 - 4.0536230 - FZÚ 2021 RIV DE eng J - Journal Article
Stuchlíková, The-Ha - Stuchlík, Jiří - Remeš, Zdeněk - Taylor, Andrew - Mortet, Vincent - Ashcheulov, Petr - Gregora, Ivan - Krivyakin, G. - Volodin, V.
High-temperature PIN diodes based on amorphous hydrogenated silicon-carbon alloys and boron-doped diamond thin films.
Physica Status Solidi B. Roč. 257, č. 6 (2020), s. 1-6, č. článku 1900247. ISSN 0370-1972. E-ISSN 1521-3951
R&D Projects: GA MŠMT(CZ) EF16_019/0000760; GA ČR GC19-02858J
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : a-SiC:H * boron-doped diamond * fluorine-doped tin oxide * I-V characteristics * PIN diodes * BDD * FTO
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.710, year: 2020
Method of publishing: Limited access
https://doi.org/10.1002/pssb.201900247
Permanent Link: http://hdl.handle.net/11104/0314043 - 5.0521379 - FZÚ 2020 RIV US eng J - Journal Article
Šilhavík, Martin - Müller, Martin - Stuchlík, Jiří - Stuchlíková, The-Ha - Klementová, Mariana - Kočka, Jan - Fejfar, Antonín - Červenka, Jiří
Comparative study of catalyst-induced doping and metal incorporation in silicon nanowires.
Applied Physics Letters. Roč. 114, č. 13 (2019), s. 1-5, č. článku 132103. ISSN 0003-6951. E-ISSN 1077-3118
R&D Projects: GA MŠMT(CZ) EF16_019/0000760; GA ČR GA16-12355S
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : silicon nanowires * PECVD * catalyst doping
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.597, year: 2019
Method of publishing: Limited access
https://doi.org/10.1063/1.5086617
Permanent Link: http://hdl.handle.net/11104/0306012 - 6.0511336 - FZÚ 2020 RIV DE eng J - Journal Article
Remeš, Zdeněk - Stuchlík, Jiří - Stuchlíková, The-Ha - Dragounová, K. - Ashcheulov, Petr - Taylor, Andrew - Mortet, Vincent - Poruba, Aleš
Optoelectronic properties of hydrogenated amorphous substoichiometric silicon carbide with low carbon content deposited at high temperature on semi-transparent boron-doped diamond.
Physica Status Solidi A. Roč. 216, č. 21 (2019), s. 1-6, č. článku 1900241. ISSN 1862-6300. E-ISSN 1862-6319
R&D Projects: GA MŠMT(CZ) EF16_019/0000760; GA ČR GC19-02858J
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : silicon carbide * boron-doped diamond * diode * photothermal deflection spectroscopy * Raman spectroscopy * infrared spectroscopy * current-voltage characteristics
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.759, year: 2019
Method of publishing: Limited access
https://doi.org/10.1002/pssa.201900241
Permanent Link: http://hdl.handle.net/11104/0301632 - 7.0511026 - FZÚ 2020 RIV GB eng J - Journal Article
Stuchlíková, The-Ha - Remeš, Zdeněk - Mortet, Vincent - Taylor, Andrew - Ashcheulov, Petr - Stuchlík, Jiří - Volodin, V.A.
Electrical and optical characteristics of boron doped nanocrystalline diamond films.
Vacuum. Roč. 168, Oct (2019), s. 1-4, č. článku 108813. ISSN 0042-207X. E-ISSN 1879-2715
R&D Projects: GA MŠMT(CZ) EF16_019/0000760; GA ČR GA17-05259S; GA AV ČR(CZ) Fellowship J. E. Purkyně
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760; AV ČR(CZ) Fellowship J. E. Purkyně
Program: Fellowship J. E. Purkyně
Institutional support: RVO:68378271
Keywords : Raman spectroscopy * boron doped diamond * photothermal deflection spectroscopy
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 2.906, year: 2019
Method of publishing: Limited access
https://doi.org/10.1016/j.vacuum.2019.108813
Permanent Link: http://hdl.handle.net/11104/0301381 - 8.0496460 - FZÚ 2019 RIV GB eng J - Journal Article
Volodin, V.A. - Mortet, Vincent - Taylor, Andrew - Remeš, Zdeněk - Stuchlíková, The-Ha - Stuchlík, Jiří
Raman scattering in boron doped nanocrystalline diamond films: Manifestation of Fano interference and phonon confinement effect.
Solid State Communications. Roč. 276, Aug (2018), s. 33-36. ISSN 0038-1098. E-ISSN 1879-2766
R&D Projects: GA ČR GA17-05259S; GA AV ČR(CZ) Fellowship J. E. Purkyně; GA MŠMT(CZ) LTC17029
Grant - others:AV ČR(CZ) Fellowship J. E. Purkyně
Program: Fellowship J. E. Purkyně
Institutional support: RVO:68378271
Keywords : Raman scattering * Diamond * Fano interference
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.433, year: 2018
Permanent Link: http://hdl.handle.net/11104/0289331 - 9.0479788 - FZÚ 2018 RIV RU eng J - Journal Article
Krivyakin, G.K. - Volodin, V.A. - Shklyaev, A.A. - Mortet, Vincent - More Chevalier, Joris - Ashcheulov, Petr - Remeš, Zdeněk - Stuchlíková, The-Ha - Stuchlík, Jiří
Formation and study of p–i–n structures based on two-phase hydrogenated silicon with a germanium layer in the i-type region.
Semiconductors. Roč. 51, č. 10 (2017), s. 1370-1376. ISSN 1063-7826. E-ISSN 1090-6479
R&D Projects: GA ČR GA13-31783S
Grant - others:AV ČR(CZ) KONNECT-007
Program: Bilaterální spolupráce
Institutional support: RVO:68378271
Keywords : PIN * a-Si:H * Ge
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 0.672, year: 2017
Permanent Link: http://hdl.handle.net/11104/0275723 - 10.0467514 - FZÚ 2017 RIV RU eng J - Journal Article
Krivyakin, G.K. - Volodin, V. - Kochubei, S.A. - Kamaev, G.N. - Purkrt, Adam - Remeš, Zdeněk - Fajgar, Radek - Stuchlíková, The-Ha - Stuchlík, Jiří
Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing.
Semiconductors. Roč. 50, č. 7 (2016), s. 935-940. ISSN 1063-7826. E-ISSN 1090-6479
R&D Projects: GA MŠMT LH12236
Institutional support: RVO:68378271 ; RVO:67985858
Keywords : hydrogenated amorphous silicon * nanocrystals * laser annealing
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 0.602, year: 2016
Permanent Link: http://hdl.handle.net/11104/0265612