Search results
- 1.0479789 - FZÚ 2018 RIV RU eng J - Journal Article
Mikhailova, M. P. - Berezovets, V.A. - Parfeniev, R.V. - Danilov, L.V. - Safonchik, M.O. - Hospodková, Alice - Pangrác, Jiří - Hulicius, Eduard
Vertical transport in type-II Heterojunctions with InAs/GaSb/AlSb composite quantum wells in a high magnetic field.
Semiconductors. Roč. 51, č. 10 (2017), s. 1343-1349. ISSN 1063-7826. E-ISSN 1090-6479
R&D Projects: GA MŠMT LM2015087; GA MŠMT LO1603
Institutional support: RVO:68378271
Keywords : InAs * GaSb * composite QW * magnetic properties
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 0.672, year: 2017
Permanent Link: http://hdl.handle.net/11104/0275726 - 2.0479788 - FZÚ 2018 RIV RU eng J - Journal Article
Krivyakin, G.K. - Volodin, V.A. - Shklyaev, A.A. - Mortet, Vincent - More Chevalier, Joris - Ashcheulov, Petr - Remeš, Zdeněk - Stuchlíková, The-Ha - Stuchlík, Jiří
Formation and study of p–i–n structures based on two-phase hydrogenated silicon with a germanium layer in the i-type region.
Semiconductors. Roč. 51, č. 10 (2017), s. 1370-1376. ISSN 1063-7826. E-ISSN 1090-6479
R&D Projects: GA ČR GA13-31783S
Grant - others:AV ČR(CZ) KONNECT-007
Program: Bilaterální spolupráce
Institutional support: RVO:68378271
Keywords : PIN * a-Si:H * Ge
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 0.672, year: 2017
Permanent Link: http://hdl.handle.net/11104/0275723 - 3.0467514 - FZÚ 2017 RIV RU eng J - Journal Article
Krivyakin, G.K. - Volodin, V. - Kochubei, S.A. - Kamaev, G.N. - Purkrt, Adam - Remeš, Zdeněk - Fajgar, Radek - Stuchlíková, The-Ha - Stuchlík, Jiří
Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing.
Semiconductors. Roč. 50, č. 7 (2016), s. 935-940. ISSN 1063-7826. E-ISSN 1090-6479
R&D Projects: GA MŠMT LH12236
Institutional support: RVO:68378271 ; RVO:67985858
Keywords : hydrogenated amorphous silicon * nanocrystals * laser annealing
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 0.602, year: 2016
Permanent Link: http://hdl.handle.net/11104/0265612 - 4.0448576 - FZÚ 2016 RIV RU eng J - Journal Article
Bagraev, N.T. - Danilovskii, E.Yu. - Gets, D.S. - Kalabukhova, E.N. - Klyachkin, L.E. - Koudryavtsev, A.A. - Malyarenko, A.M. - Mashkov, V.A. - Savchenko, Dariia - Shanina, B.D.
Silicon vacancy-related centers in non-irradiated 6H-SiC nanostructur.
Semiconductors. Roč. 49, č. 5 (2015), 649-657. ISSN 1063-7826. E-ISSN 1090-6479
R&D Projects: GA ČR GP13-06697P; GA MŠMT(CZ) LM2011029
Grant - others:SAFMAT(XE) CZ.2.16/3.1.00/22132
Institutional support: RVO:68378271
Keywords : electron spin resonance * 6H-SiC nanostructures * silicon vacancy related centers * NV centers
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 0.701, year: 2015
Permanent Link: http://hdl.handle.net/11104/0250232 - 5.0435666 - FZÚ 2015 RIV RU eng J - Journal Article
Bagraev, N.T. - Gets, D.S. - Kalabukhova, E.N. - Klyachkin, L.E. - Malyarenko, A.M. - Mashkov, V.A. - Savchenko, Dariia - Shanina, B.D.
Electrically-detected electron paramagnetic resonance of point centers in 6H-SiC nanostructures.
Semiconductors. Roč. 48, č. 11 (2014), s. 1467-1480. ISSN 1063-7826. E-ISSN 1090-6479
R&D Projects: GA MŠMT(CZ) LM2011029
Grant - others:SAFMAT(XE) CZ.2.16/3.1.00/22132
Institutional support: RVO:68378271
Keywords : electron paramagnetic resonance * electrically- detected electron paramagnetic resonance * 6H -SiC nanostructures * nitrogen-vacancy defect * point defect
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 0.739, year: 2014
Permanent Link: http://hdl.handle.net/11104/0239487 - 6.0395842 - FZÚ 2014 RIV RU eng J - Journal Article
Mikhailova, M. P. - Andreev, I.A. - Ivanov, E.V. - Konovalov, G.G. - Grebentschikova, E.A. - Yakovlev, Yu. P. - Hulicius, Eduard - Hospodková, Alice - Pangrác, Jiří
Photoelectric and luminescence properties of GaSb-based nanoheterostructures with a deep Al(As)Sb/InAsSb/Al(As)Sb quantum well grown by metalorganic vapor-phase epitaxy.
Semiconductors. Roč. 47, č. 8 (2013), 1037-1042. ISSN 1063-7826. E-ISSN 1090-6479
R&D Projects: GA ČR GA13-15286S
Institutional support: RVO:68378271
Keywords : GaSb * MOVPE * photodetector
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 0.705, year: 2013
Permanent Link: http://hdl.handle.net/11104/0223736 - 7.0342123 - FZÚ 2011 RIV RU eng J - Journal Article
Mikhailova, M. P. - Ivanov, E.V. - Moiseev, K. D. - Yakovlev, Yu. P. - Hulicius, Eduard - Hospodková, Alice - Pangrác, Jiří - Šimeček, Tomislav
Electroluminescence in p-InAs/AlSb/InAsSb/AlSb/p(n)-GaSb type II heterostructures with deep quantum wells at the interface.
Semiconductors. Roč. 44, č. 1 (2010), 66-71. ISSN 1063-7826. E-ISSN 1090-6479
Institutional research plan: CEZ:AV0Z10100521
Keywords : electroluninescence * MOVPE * GaSb * InAs * quantum well
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 0.603, year: 2010
Permanent Link: http://hdl.handle.net/11104/0184942 - 8.0181411 - UFCH-W 20020078 RIV US eng J - Journal Article
Imenkov, A. N. - Kolchanova, N. M. - Kubát, Pavel - Civiš, Svatopluk - Yakovlev, Yu. P.
Spectral Line Width of the Current-Tunable Lasers on the Base of InAsSbP at Low Temperature.
Semiconductors. Roč. 36, č. 5 (2002), s. 592-598. ISSN 1063-7826. E-ISSN 1090-6479
R&D Projects: GA AV ČR IAA4040708
Institutional research plan: CEZ:AV0Z4040901
Keywords : semiconductor laser
Subject RIV: CF - Physical ; Theoretical Chemistry
Impact factor: 0.674, year: 2002
Permanent Link: http://hdl.handle.net/11104/0077985 - 9.0181284 - UFCH-W 20010206 RIV US eng J - Journal Article
Imenkov, A. N. - Kolčanova, N. M. - Kubát, Pavel - Moiseev, K. D. - Civiš, Svatopluk - Jakovlev, Yu. P.
Current-Tunable lasers with a Narrow Emission Line Operating at 3.3 ćm.
Semiconductors. Roč. 35, č. 3 (2001), s. 360-364. ISSN 1063-7826. E-ISSN 1090-6479
R&D Projects: GA AV ČR IAA4040104
Institutional research plan: CEZ:AV0Z4040901
Keywords : semiconductors lasers * heterostructure lasers
Subject RIV: CF - Physical ; Theoretical Chemistry
Impact factor: 0.575, year: 2001
Permanent Link: http://hdl.handle.net/11104/0077866 - 10.0181014 - UFCH-W 20000281 RIV US eng J - Journal Article
Imenkov, A. N. - Kolchanova, N. M. - Kubát, Pavel - Civiš, Svatopluk - Yakovlev, Yu. P.
Emission-line Broadening of Current Tunable InAsSbP/InAsSb/InAsSbP Heterostructure Lasers.
Semiconductors. Roč. 34, č. 12 (2000), s. 1406-1409. ISSN 1063-7826. E-ISSN 1090-6479
R&D Projects: GA AV ČR IAA4040708
Institutional research plan: CEZ:AV0Z4040901; CEZ:A54/98:Z4-040-9-ii
Keywords : line broadening * laser
Subject RIV: CF - Physical ; Theoretical Chemistry
Impact factor: 0.598, year: 2000
Permanent Link: http://hdl.handle.net/11104/0077623