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  1. 1.
    0571425 - FZÚ 2024 RIV GB eng J - Journal Article
    Kim, H. - Kashir, Alireza - Jang, H. - Oh, S. - Yadav, M. - Lee, S. - Hwang, H.
    Two-step deposition of TiN capping electrodes to prevent degradation of ferroelectric properties in an in-situ crystallized TiN/Hf0.5Zr0.5O2/TiN device.
    Nano Express. Roč. 3, č. 1 (2022), č. článku 015004. E-ISSN 2632-959X
    Institutional support: RVO:68378271
    Keywords : capping layer effect * in situ crystallization * polarization value * deposition temperature * wake-up effect
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
    Impact factor: 3, year: 2022
    Method of publishing: Open access
    Permanent Link: https://hdl.handle.net/11104/0342651
    FileDownloadSizeCommentaryVersionAccess
    0571425.pdf03.4 MBCC licencePublisher’s postprintopen-access
     
     
  2. 2.
    0568238 - FZÚ 2023 RIV GB eng J - Journal Article
    Jang, H. - Kashir, Alireza - Oh, S. - Hwang, H.
    Improvement of endurance and switching speed in Hf1-xZrxO2 thin films using a nanolaminate structure.
    Nanotechnology. Roč. 33, č. 39 (2022), č. článku 395205. ISSN 0957-4484. E-ISSN 1361-6528
    Institutional support: RVO:68378271
    Keywords : Hf1-x ZrxO2 * nanolaminate * topological domain wall * switching barrier * coercive field * endurance * switching speed
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
    Impact factor: 3.5, year: 2022
    Method of publishing: Limited access
    https://doi.org/10.1088/1361-6528/ac79bb
    Permanent Link: https://hdl.handle.net/11104/0339569
     
     
  3. 3.
    0553457 - FZÚ 2023 RIV GB eng J - Journal Article
    Yadav, M. - Kashir, Alireza - Oh, S. - Nikam, R.D. - Kim, H. - Jang, H. - Hwang, H.
    High polarization and wake-up free ferroelectric characteristics in ultrathin Hf0.5Zr0.5O2 devices by control of oxygen-deficient layer.
    Nanotechnology. Roč. 33, č. 8 (2022), č. článku 085206. ISSN 0957-4484. E-ISSN 1361-6528
    Institutional support: RVO:68378271
    Keywords : interfacial layer * annealing temperature * remnant polarization * sub-5 nm HZO * wakeup free * TEM * XPS
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
    Impact factor: 3.5, year: 2022
    Method of publishing: Open access with time embargo
    https://doi.org/10.1088/1361-6528/ac3a38
    Permanent Link: http://hdl.handle.net/11104/0330727
    FileDownloadSizeCommentaryVersionAccess
    0553457AP.pdf11.1 MBAuthor’s postprintopen-access
     
     


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