Search results
- 1.0571425 - FZÚ 2024 RIV GB eng J - Journal Article
Kim, H. - Kashir, Alireza - Jang, H. - Oh, S. - Yadav, M. - Lee, S. - Hwang, H.
Two-step deposition of TiN capping electrodes to prevent degradation of ferroelectric properties in an in-situ crystallized TiN/Hf0.5Zr0.5O2/TiN device.
Nano Express. Roč. 3, č. 1 (2022), č. článku 015004. E-ISSN 2632-959X
Institutional support: RVO:68378271
Keywords : capping layer effect * in situ crystallization * polarization value * deposition temperature * wake-up effect
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3, year: 2022
Method of publishing: Open access
Permanent Link: https://hdl.handle.net/11104/0342651File Download Size Commentary Version Access 0571425.pdf 0 3.4 MB CC licence Publisher’s postprint open-access - 2.0553457 - FZÚ 2023 RIV GB eng J - Journal Article
Yadav, M. - Kashir, Alireza - Oh, S. - Nikam, R.D. - Kim, H. - Jang, H. - Hwang, H.
High polarization and wake-up free ferroelectric characteristics in ultrathin Hf0.5Zr0.5O2 devices by control of oxygen-deficient layer.
Nanotechnology. Roč. 33, č. 8 (2022), č. článku 085206. ISSN 0957-4484. E-ISSN 1361-6528
Institutional support: RVO:68378271
Keywords : interfacial layer * annealing temperature * remnant polarization * sub-5 nm HZO * wakeup free * TEM * XPS
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.5, year: 2022
Method of publishing: Open access with time embargo
https://doi.org/10.1088/1361-6528/ac3a38
Permanent Link: http://hdl.handle.net/11104/0330727File Download Size Commentary Version Access 0553457AP.pdf 1 1.1 MB Author’s postprint open-access - 3.0551091 - FZÚ 2022 RIV US eng J - Journal Article
Kashir, Alireza - Farahani, M.G. - Kamba, Stanislav - Yadav, M. - Hwang, H.
Hf1−xZrxO2/ZrO2 nanolaminate thin films as a high‑κ dielectric.
ACS Applied Electronic Materials. Roč. 3, č. 12 (2021), s. 5632-5640. E-ISSN 2637-6113
R&D Projects: GA MŠMT(CZ) EF16_019/0000760; GA ČR(CZ) GA21-06802S
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : ferroelectric * antiferroelectric * thin films * permittivity
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 4.494, year: 2021
Method of publishing: Limited access
https://doi.org/10.1021/acsaelm.1c01105
Permanent Link: http://hdl.handle.net/11104/0327442