Search results

  1. 1.
    0585820 - FZÚ 2025 RIV GB eng J - Journal Article
    Popelář, Tomáš - Matějka, Filip - Kopenec, Jakub - Morselli, G. - Ceroni, P. - Kůsová, Kateřina
    Why do Si quantum dots with stronger fast emission have lower external photoluminescence quantum yield?
    Nanoscale Advances. Roč. 6, č. 10 (2024), s. 2644-2655. ISSN 2516-0230. E-ISSN 2516-0230
    R&D Projects: GA ČR(CZ) GA23-05837S
    Institutional support: RVO:68378271
    Keywords : silicon quantum dots * fast emission * photoluminescence dynamics * quantum yield
    OECD category: Nano-materials (production and properties)
    Impact factor: 4.7, year: 2022
    Method of publishing: Open access
    Permanent Link: https://hdl.handle.net/11104/0353492
    FileDownloadSizeCommentaryVersionAccess
    0585820.pdf03 MBCC LicencePublisher’s postprintopen-access
     
     
  2. 2.
    0577360 - FZÚ 2024 RIV US eng J - Journal Article
    Popelář, Tomáš - Galář, Pavel - Matějka, Filip - Morselli, G. - Ceroni, P. - Kůsová, Kateřina
    Universal radiative lifetimes in the long-lived luminescence of Si quantum dots.
    Journal of Physical Chemistry C. Roč. 127, č. 41 (2023), s. 20426-20437. ISSN 1932-7447. E-ISSN 1932-7455
    R&D Projects: GA ČR(CZ) GA23-05837S
    Institutional support: RVO:68378271
    Keywords : silicon quantum dots * internal quantum yield * photoluminescence lifetime
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
    Impact factor: 3.7, year: 2022
    Method of publishing: Open access
    Permanent Link: https://hdl.handle.net/11104/0348594
    FileDownloadSizeCommentaryVersionAccess
    0577360.pdf04.4 MBCC licencePublisher’s postprintopen-access
     
     
  3. 3.
    0541771 - FZÚ 2022 RIV US eng J - Journal Article
    Kůsová, Kateřina - Popelář, Tomáš - Pelant, Ivan - Morselli, G. - Angeloni, S. - Ceroni, P.
    Trap-state-induced Becquerel type of photoluminescence decay in DPA-activated silicon nanocrystals.
    Journal of Physical Chemistry C. Roč. 125, č. 3 (2021), s. 2055-2063. ISSN 1932-7447. E-ISSN 1932-7455
    R&D Projects: GA MŠMT(CZ) EF16_019/0000760; GA ČR(CZ) GA18-05552S
    Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
    Institutional support: RVO:68378271
    Keywords : surface modification * silicon nanocrystal * photoluminescence decay
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
    Impact factor: 4.177, year: 2021
    Method of publishing: Limited access
    https://doi.org/10.1021/acs.jpcc.0c09072
    Permanent Link: http://hdl.handle.net/11104/0319297
     
     


  This site uses cookies to make them easier to browse. Learn more about how we use cookies.