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- 1.0536206 - FZÚ 2021 RIV NL eng J - Journal Article
Romanyuk, Olexandr - Gordeev, Ivan - Paszuk, A. - Supplie, O. - Stoeckmann, J.P. - Houdková, Jana - Ukraintsev, Egor - Bartoš, Igor - Jiříček, Petr - Hannappel, T.
GaP/Si(001) interface study by XPS in combination with Ar gas cluster ion beam sputtering.
Applied Surface Science. Roč. 514, Jun (2020), s. 1-8, č. článku 145903. ISSN 0169-4332. E-ISSN 1873-5584
R&D Projects: GA MŠMT(CZ) EF16_019/0000760; GA MŠMT(CZ) LM2015088; GA ČR GC18-06970J
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : GaP/Si heterostructure * buried interface analysis * XPS * depth profiling * gas cluster ion beam sputtering * interface core level shifts
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 6.707, year: 2020
Method of publishing: Limited access
https://doi.org/10.1016/j.apsusc.2020.145903
Permanent Link: http://hdl.handle.net/11104/0314015