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Records found: 8  
Your query: Author Sysno/Doc.kind = "^cav_un_auth 0398130 zj^"
    1.
    0585874 - FZÚ 2025 RIV NL eng J - Journal Article
    Hazdra, P. - Laposa, A. - Šobáň, Zbyněk - Alam, Mahebub - Povolný, V. - Mortet, Vincent
    Vertical Schottky diode on (113) oriented homoepitaxial diamond.
    Diamond and Related Materials. Roč. 146, June (2024), č. článku 111180. ISSN 0925-9635. E-ISSN 1879-0062
    R&D Projects: GA ČR(CZ) GA20-11140S; GA MŠMT(CZ) EF16_019/0000760; GA MŠMT LM2023051
    Institutional support: RVO:68378271
    Keywords : diamond * Schottky diode * vertical * boron doped
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
    Impact factor: 4.1, year: 2022
    Permanent Link: https://hdl.handle.net/11104/0353872
     
     
    2.
    0585191 - FZÚ 2025 RIV US eng J - Journal Article
    Alam, Mahebub - Hubík, Pavel - Gedeonová, Zuzana - Fekete, Ladislav - Kopeček, Jaromír - Taylor, Andrew - Mortet, Vincent
    Thick crack-free {113} epitaxial boron-doped diamond layers for power electronics—Deposition with nitrogen addition and high microwave power.
    Applied Physics Letters. Roč. 124, April (2024), č. článku 161904. ISSN 0003-6951. E-ISSN 1077-3118
    R&D Projects: GA MŠMT(CZ) EF16_019/0000760; GA ČR(CZ) GA20-11140S
    Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
    Institutional support: RVO:68378271
    Keywords : diamond * boron doping * thick
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
    Impact factor: 4, year: 2022
    Permanent Link: https://hdl.handle.net/11104/0353691
     
     
    3.
    0578139 - FZÚ 2024 RIV US eng J - Journal Article
    Hazdra, P. - Laposa, A. - Šobáň, Z. - Kroutil, J. - Lambert, Nicolas - Povolný, V. - Taylor, Andrew - Mortet, Vincent
    Pseudo-vertical Schottky diode with Ruthenium contacts on (113) boron-doped homoepitaxial diamond layers.
    Physica Status Solidi A. Roč. 220, č. 23 (2023), č. článku 2300508. ISSN 1862-6300. E-ISSN 1862-6319
    R&D Projects: GA MŠMT(CZ) EF16_019/0000760; GA ČR(CZ) GA20-11140S
    Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
    Research Infrastructure: CzechNanoLab II - 90251
    Institutional support: RVO:68378271
    Keywords : boron-doped diamond (BDD) * pseudo-vertical Schottky barrier diodes (pVSBDs) * ruthenium (Ru) ohmic contact * ruthenium (Ru) Schottky contact
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
    Impact factor: 2, year: 2022
    Method of publishing: Limited access
    https://doi.org/10.1002/pssa.202300508
    Permanent Link: https://hdl.handle.net/11104/0348945
     
     
    4.
    0574634 - FZÚ 2024 RIV US eng J - Journal Article
    Sobaszek, M. - Brzhezinskaya, M. - Olejnik, A. - Mortet, V. - Alam, M. - Sawczak, M. - Ficek, M. - Gazda, M. - Weiss, Zdeněk - Bogdanowicz, R.
    Highly occupied surface states at deuterium-grown boron-doped diamond interfaces for efficient photoelectrochemistry.
    Small. Roč. 19, č. 26 (2023), č. článku 2208265. ISSN 1613-6810. E-ISSN 1613-6829
    R&D Projects: GA ČR(CZ) GA20-11140S
    Institutional support: RVO:68378271
    Keywords : core-level spectroscopies * deuterium-based plasma * density functional theory (DFT) calculations * polycrystalline diamonds * Raman spectroscopy
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
    Impact factor: 13.3, year: 2022
    Method of publishing: Open access
    Permanent Link: https://hdl.handle.net/11104/0347693
    FileDownloadSizeCommentaryVersionAccess
    0574634.pdf03.7 MBCC licencePublisher’s postprintopen-access
     
     
    5.
    0557316 - FZÚ 2023 RIV CH eng J - Journal Article
    Hazdra, P. - Laposa, A. - Šobáň, Zbyněk - Taylor, Andrew - Lambert, Nicolas - Povolný, V. - Kroutil, J. - Gedeonová, Zuzana - Hubík, Pavel - Mortet, Vincent
    Pseudo-vertical Mo/Au Schottky diodes on {113} oriented boron doped homoepitaxial diamond layers.
    Diamond and Related Materials. Roč. 126, June (2022), č. článku 109088. ISSN 0925-9635. E-ISSN 1879-0062
    R&D Projects: GA ČR(CZ) GA20-11140S; GA MŠMT(CZ) EF16_019/0000760; GA MŠMT LM2018110
    Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
    Institutional support: RVO:68378271
    Keywords : diamond * Schottky diodes * boron-doping * molybdenum
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
    Impact factor: 4.1, year: 2022
    Method of publishing: Limited access
    https://doi.org/10.1016/j.diamond.2022.109088
    Permanent Link: http://hdl.handle.net/11104/0331353
     
     
    6.
    0556262 - FZÚ 2023 RIV CH eng J - Journal Article
    Mortet, Vincent - Taylor, Andrew - Davydova, Marina - Jiránek, J. - Fekete, Ladislav - Klimša, Ladislav - Šimek, Daniel - Lambert, Nicolas - Sedláková, Silvia - Kopeček, Jaromír - Hazdra, P.
    Effect of substrate crystalline orientation on boron-doped homoepitaxial diamond growth.
    Diamond and Related Materials. Roč. 122, Feb (2022), č. článku 108887. ISSN 0925-9635. E-ISSN 1879-0062
    R&D Projects: GA ČR(CZ) GA20-11140S; GA MŠMT(CZ) EF16_019/0000760
    Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
    Research Infrastructure: CzechNanoLab - 90110
    Institutional support: RVO:68378271
    Keywords : diamond boron-doping * substrate crystallographic orientation * plasma-enhanced chemical vapor deposition
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
    Impact factor: 4.1, year: 2022
    Method of publishing: Limited access
    https://doi.org/10.1016/j.diamond.2022.108887
    Permanent Link: http://hdl.handle.net/11104/0330553
     
     
    7.
    0556036 - FZÚ 2023 RIV CH eng J - Journal Article
    Hazdra, P. - Laposa, A. - Šobáň, Zbyněk - Voves, J. - Lambert, Nicolas - Davydova, Marina - Povolný, V. - Taylor, Andrew - Mortet, Vincent
    Low-resistance ohmic contacts on boron-doped {113} oriented homoepitaxial diamond layers.
    Diamond and Related Materials. Roč. 121, Jan (2022), č. článku 108797. ISSN 0925-9635. E-ISSN 1879-0062
    R&D Projects: GA ČR(CZ) GA20-11140S; GA MŠMT(CZ) EF16_019/0000760
    Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
    Research Infrastructure: CzechNanoLab - 90110
    Institutional support: RVO:68378271
    Keywords : diamond contacts * boron-doping * chemical vapor deposition * contact resistance
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
    Impact factor: 4.1, year: 2022
    Method of publishing: Limited access
    https://doi.org/10.1016/j.diamond.2021.108797
    Permanent Link: http://hdl.handle.net/11104/0330411
     
     
    8.
    0541744 - FZÚ 2022 RIV CH eng J - Journal Article
    Mortet, Vincent - Taylor, Andrew - Lambert, Nicolas - Gedeonová, Zuzana - Fekete, Ladislav - Lorinčík, J. - Klimša, Ladislav - Kopeček, Jaromír - Hubík, Pavel - Šobáň, Zbyněk - Laposa, A. - Davydova, Marina - Voves, J. - Pošta, A. - Povolný, V. - Hazdra, P.
    Properties of boron-doped (113) oriented homoepitaxial diamond layers.
    Diamond and Related Materials. Roč. 111, Jan (2021), č. článku 108223. ISSN 0925-9635. E-ISSN 1879-0062
    R&D Projects: GA MŠMT(CZ) EF16_019/0000760; GA MŠMT LM2018110; GA ČR(CZ) GA20-11140S; GA ČR GA17-05259S
    Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
    Institutional support: RVO:68378271
    Keywords : boron-doped diamond * electrical properties * (113) oriented epitaxial diamond
    OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
    Impact factor: 3.806, year: 2021
    Method of publishing: Limited access
    https://doi.org/10.1016/j.diamond.2020.108223
    Permanent Link: http://hdl.handle.net/11104/0319277
     
     


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