Search results
- 1.0585344 - FZÚ 2025 RIV CZ cze J - Journal Article
Vaněk, Tomáš - Hospodková, Alice - Blažek, K. - Hulicius, Eduard
Hybridní scintilační detektor, založený na vícenásobných kvantových jámách InGaN/GaN, připravených metodou MOVPE s vrstvami scintilátoru BGO.
[A hybrid detector based on MOVPE-grown InGaN/GaN multiple quantum wells with BGO scintillator layers.]
Československý časopis pro fyziku. Roč. 74, č. 1 (2024), s. 13-17. ISSN 0009-0700
R&D Projects: GA MŠMT(CZ) LTAIN19163; GA MŠMT(CZ) EF16_019/0000760
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Research Infrastructure: CzechNanoLab - 90110
Institutional support: RVO:68378271
Keywords : scintilátory * BGO * GaN * MOVPE * InGaN/GaN
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Method of publishing: Limited access
https://ccf.fzu.cz/
Permanent Link: https://hdl.handle.net/11104/0353063 - 2.0572001 - FZÚ 2024 RIV US eng J - Journal Article
Hospodková, Alice - Hájek, František - Hubáček, Tomáš - Gedeonová, Zuzana - Hubík, Pavel - Hývl, Matěj - Pangrác, Jiří - Dominec, Filip - Košutová, Tereza
Electron transport properties in high electron mobility transistor structures improved by V-Pit formation on the AlGaN/GaN interface.
ACS Applied Materials and Interfaces. Roč. 15, č. 15 (2023), s. 19646-19652. ISSN 1944-8244. E-ISSN 1944-8252
R&D Projects: GA MŠMT(CZ) LTAIN19163; GA ČR(CZ) GF22-28001K; GA MŠMT LM2023051
Institutional support: RVO:68378271
Keywords : HEMT * GaN * AlGaN * metal-organic vapor phase epitaxy * dislocations * electron mobility
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 9.5, year: 2022
Method of publishing: Open access
Permanent Link: https://hdl.handle.net/11104/0342845File Download Size Commentary Version Access 0572001.pdf 0 4.8 MB CC Licence Publisher’s postprint open-access - 3.0570390 - FZÚ 2024 RIV NL eng J - Journal Article
Hubáček, Tomáš - Kuldová, Karla - Gedeonová, Zuzana - Hájek, František - Košutová, Tereza - Banerjee, Swarnendu - Hubík, Pavel - Pangrác, Jiří - Vaněk, Tomáš - Hospodková, Alice
Impact of Ge doping on MOVPE grown InGaN layers.
Journal of Crystal Growth. Roč. 604, Feb (2023), č. článku 127043. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA MŠMT LM2018110; GA MŠMT(CZ) LTAIN19163; GA ČR(CZ) GJ20-05497Y
Institutional support: RVO:68378271
Keywords : germanium * MOVPE * InGaN * nitrides * photoluminescence * doping
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.8, year: 2022
Method of publishing: Limited access
https://doi.org/10.1016/j.jcrysgro.2022.127043
Permanent Link: https://hdl.handle.net/11104/0341707 - 4.0569330 - FZÚ 2024 RIV NL eng J - Journal Article
Hospodková, Alice - Hájek, František - Hubáček, Tomáš - Gedeonová, Zuzana - Hubík, Pavel - Mareš, Jiří J. - Pangrác, Jiří - Dominec, Filip - Kuldová, Karla - Hulicius, Eduard
Electron mobility in GaN layers and HEMT structure optimized by MOVPE technological parameters.
Journal of Crystal Growth. Roč. 605, March (2023), č. článku 127061. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA MŠMT LM2018110; GA MŠMT(CZ) LTAIN19163; GA ČR(CZ) GF22-28001K
Institutional support: RVO:68378271
Keywords : HEMT * GAN * metalorganic vapor phase epitaxy
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.8, year: 2022
Method of publishing: Limited access
https://doi.org/10.1016/j.jcrysgro.2022.127061
Permanent Link: https://hdl.handle.net/11104/0342034 - 5.0556260 - FZÚ 2023 RIV GB eng J - Journal Article
Stránská Matějová, J. - Hospodková, Alice - Košutová, T. - Hubáček, Tomáš - Hývl, Matěj - Holý, V.
V-pits formation in InGaN/GaN: influence of threading dislocations and indium content.
Journal of Physics D-Applied Physics. Roč. 55, č. 25 (2022), č. článku 255101. ISSN 0022-3727. E-ISSN 1361-6463
R&D Projects: GA MŠMT(CZ) LTAIN19163; GA MŠMT EF16_026/0008382
Grant - others:OP VVV - CARAT CZ.02.1.01/0.0/0.0/16_026/0008382
Research Infrastructure: CzechNanoLab - 90110
Institutional support: RVO:68378271
Keywords : V-pits * InGaN/GaN * dislocations * x-ray diffraction * diffuse scattering * XRD * RSM
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.4, year: 2022
Method of publishing: Open access with time embargo
https://doi.org/10.1088/1361-6463/ac5c1a
Permanent Link: http://hdl.handle.net/11104/0330551File Download Size Commentary Version Access 0556260.pdf 4 11.9 MB Author’s postprint open-access - 6.0543533 - FZÚ 2022 RIV GB eng J - Journal Article
Hájek, František - Hospodková, Alice - Hubík, Pavel - Gedeonová, Zuzana - Hubáček, Tomáš - Pangrác, Jiří - Kuldová, Karla
Transport properties of AlGaN/GaN HEMT structures with back barrier: impact of dislocation density and improved design.
Semiconductor Science and Technology. Roč. 36, č. 7 (2021), č. článku 075016. ISSN 0268-1242. E-ISSN 1361-6641
R&D Projects: GA MŠMT LM2018110; GA MŠMT(CZ) LTAIN19163; GA MŠMT(CZ) EF16_019/0000760
Grant - others:OP VVV - SOLID21(XE) CZ.02.1.01/0.0/0.0/16_019/0000760
Institutional support: RVO:68378271
Keywords : HEMT * GaN * metalorganic vapor phase epitaxy
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 2.048, year: 2021
Method of publishing: Open access with time embargo
Permanent Link: http://hdl.handle.net/11104/0320728File Download Size Commentary Version Access 0543533.pdf 1 1.1 MB Author’s postprint open-access