Search results
- 1.0562514 - ÚFE 2023 RIV NL eng J - Journal Article
Tiagulskyi, Stanislav - Yatskiv, Roman - Faitová, Hana - Černohorský, Ondřej - Vaniš, Jan - Grym, Jan
Focused ion beam assisted prototyping of graphene/ZnO devices on Zn-polar and O-polar faces of ZnO bulk crystals.
Physica E: Low-Dimensional Systems and Nanostructures. Roč. 136, February (2022), č. článku 115006. ISSN 1386-9477. E-ISSN 1873-1759
R&D Projects: GA ČR(CZ) GA20-24366S
Institutional support: RVO:67985882
Keywords : Schottky barrier * Graphene * Nanomanipulator * FIB * Surface polarity * ZnO
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 3.3, year: 2022
Method of publishing: Limited access
https://doi.org/10.1016/j.physe.2021.115006
Permanent Link: https://hdl.handle.net/11104/0334836 - 2.0538098 - ÚFE 2021 RIV CH eng J - Journal Article
Tiagulskyi, Stanislav - Yatskiv, Roman - Faitová, Hana - Kučerová, Šárka - Roesel, David - Vaniš, Jan - Grym, Jan - Veselý, J.
Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates.
Nanomaterials. Roč. 10, č. 3 (2020), č. článku 508. E-ISSN 2079-4991
R&D Projects: GA ČR(CZ) GA17-00546S; GA ČR(CZ) GA17-00355S
Institutional support: RVO:67985882
Keywords : ZnO nanorods * Nanoscale heterojunctions * Current-voltage characteristics
OECD category: Electrical and electronic engineering
Impact factor: 5.076, year: 2020
Method of publishing: Open access
https://doi.org/10.3390/nano10030508
Permanent Link: http://hdl.handle.net/11104/0315911File Download Size Commentary Version Access UFE 0538098.pdf 3 2 MB Other require - 3.0538001 - ÚFE 2021 RIV NL eng J - Journal Article
Tiagulskyi, Stanislav - Yatskiv, Roman - Faitová, Hana - Kučerová, Šárka - Vaniš, Jan - Grym, Jan
Electrical properties of nanoscale p-n heterojunctions formed between a single ZnO nanorod and GaN substrate.
Materials Science in Semiconductor Processing. Roč. 107, 1 March (2020), č. článku 104808. ISSN 1369-8001. E-ISSN 1873-4081
R&D Projects: GA ČR(CZ) GA17-00546S; GA ČR(CZ) GA17-00355S
Institutional support: RVO:67985882
Keywords : Current-voltage characteristics * Focused ion beam patterning * Nanoscale heterojunctions * ZnO nanorods
OECD category: Electrical and electronic engineering
Impact factor: 3.927, year: 2020
Method of publishing: Limited access
https://doi.org/10.1016/j.mssp.2019.104808
Permanent Link: http://hdl.handle.net/11104/0315834File Download Size Commentary Version Access UFE 0538001.pdf 0 1 MB Other require - 4.0537415 - ÚFE 2021 RIV US eng J - Journal Article
Černohorský, Ondřej - Grym, Jan - Faitová, Hana - Bašinová, Nikola - Kučerová, Šárka - Yatskiv, Roman - Veselý, J.
Modeling of Solution Growth of ZnO Hexagonal Nanorod Arrays in Batch Reactors.
Crystal Growth & Design. Roč. 20, č. 5 (2020), s. 3347-3357. ISSN 1528-7483. E-ISSN 1528-7505
R&D Projects: GA ČR(CZ) GA17-00355S
Institutional support: RVO:67985882
Keywords : Mechanism * Kinetics * Deposition
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 4.076, year: 2020
Method of publishing: Limited access
https://doi.org/10.1021/acs.cgd.0c00144
Permanent Link: http://hdl.handle.net/11104/0315129File Download Size Commentary Version Access UFE 0537415.pdf 9 7.5 MB Other open-access - 5.0499951 - ÚFE 2020 RIV CH eng J - Journal Article
Bašinová, Nikola - Černohorský, Ondřej - Grym, Jan - Kučerová, Šárka - Faitová, Hana - Yatskiv, Roman - Vaniš, Jan - Veselý, J. - Maixner, J.
Highly Textured Seed Layers for the Growth of Vertically Oriented ZnO Nanorods.
Crystals. Roč. 9, č. 11 (2019), č. článku 566. ISSN 2073-4352. E-ISSN 2073-4352
R&D Projects: GA ČR(CZ) GA17-00355S
Institutional support: RVO:67985882
Keywords : Annealing * Nanorods * Preheating * Seed layer * Zinc oxide * Sol-gel
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 2.404, year: 2019
Method of publishing: Open access
https://www.mdpi.com/2073-4352/9/11/566
Permanent Link: http://hdl.handle.net/11104/0292134File Download Size Commentary Version Access UFE 0499951.pdf 3 7.8 MB Other require UFE 0499951.pdf 5 1 MB Other require