Search results
- 1.0538098 - ÚFE 2021 RIV CH eng J - Journal Article
Tiagulskyi, Stanislav - Yatskiv, Roman - Faitová, Hana - Kučerová, Šárka - Roesel, David - Vaniš, Jan - Grym, Jan - Veselý, J.
Highly Rectifying Heterojunctions Formed by Annealed ZnO Nanorods on GaN Substrates.
Nanomaterials. Roč. 10, č. 3 (2020), č. článku 508. E-ISSN 2079-4991
R&D Projects: GA ČR(CZ) GA17-00546S; GA ČR(CZ) GA17-00355S
Institutional support: RVO:67985882
Keywords : ZnO nanorods * Nanoscale heterojunctions * Current-voltage characteristics
OECD category: Electrical and electronic engineering
Impact factor: 5.076, year: 2020
Method of publishing: Open access
https://doi.org/10.3390/nano10030508
Permanent Link: http://hdl.handle.net/11104/0315911File Download Size Commentary Version Access UFE 0538098.pdf 3 2 MB Other require - 2.0538001 - ÚFE 2021 RIV NL eng J - Journal Article
Tiagulskyi, Stanislav - Yatskiv, Roman - Faitová, Hana - Kučerová, Šárka - Vaniš, Jan - Grym, Jan
Electrical properties of nanoscale p-n heterojunctions formed between a single ZnO nanorod and GaN substrate.
Materials Science in Semiconductor Processing. Roč. 107, 1 March (2020), č. článku 104808. ISSN 1369-8001. E-ISSN 1873-4081
R&D Projects: GA ČR(CZ) GA17-00546S; GA ČR(CZ) GA17-00355S
Institutional support: RVO:67985882
Keywords : Current-voltage characteristics * Focused ion beam patterning * Nanoscale heterojunctions * ZnO nanorods
OECD category: Electrical and electronic engineering
Impact factor: 3.927, year: 2020
Method of publishing: Limited access
https://doi.org/10.1016/j.mssp.2019.104808
Permanent Link: http://hdl.handle.net/11104/0315834File Download Size Commentary Version Access UFE 0538001.pdf 0 1 MB Other require - 3.0537851 - ÚFE 2021 RIV US eng J - Journal Article
Yatskiv, Roman - Tiagulskyi, Stanislav - Grym, Jan
Influence of Crystallographic Orientation on Schottky Barrier Formation in Gallium Oxide.
Journal of Electronic Materials. Roč. 49, č. 9 (2020), s. 5133-5137. ISSN 0361-5235. E-ISSN 1543-186X
R&D Projects: GA ČR(CZ) GA17-00546S
Institutional support: RVO:67985882
Keywords : Gallium oxide * Schottky barrier diode * Graphite/beta-Ga2O3
OECD category: Electrical and electronic engineering
Impact factor: 1.938, year: 2020
Method of publishing: Limited access
https://doi.org/10.1007/s11664-020-07996-0
Permanent Link: http://hdl.handle.net/11104/0315682File Download Size Commentary Version Access UFE 0537851.pdf 1 428.8 KB Other require - 4.0507811 - ÚFE 2020 RIV DE eng J - Journal Article
Yatskiv, Roman - Tiagulskyi, Stanislav - Grym, Jan
Characterization of Graphite/ZnO Schottky Barriers Formed on Polar and Nonpolar ZnO Surfaces.
Physica Status Solidi A. Roč. 216, č. 2 (2019), č. článku 1800734. ISSN 1862-6300. E-ISSN 1862-6319
R&D Projects: GA ČR(CZ) GA17-00546S
Institutional support: RVO:67985882
Keywords : graphite * crystal polarity * equivalent circuit
OECD category: Electrical and electronic engineering
Impact factor: 1.759, year: 2019
Method of publishing: Limited access
https://onlinelibrary.wiley.com/doi/full/10.1002/pssa.201800734
Permanent Link: http://hdl.handle.net/11104/0298779File Download Size Commentary Version Access UFE 0507811.pdf 8 973.9 KB Other require - 5.0499951 - ÚFE 2020 RIV CH eng J - Journal Article
Bašinová, Nikola - Černohorský, Ondřej - Grym, Jan - Kučerová, Šárka - Faitová, Hana - Yatskiv, Roman - Vaniš, Jan - Veselý, J. - Maixner, J.
Highly Textured Seed Layers for the Growth of Vertically Oriented ZnO Nanorods.
Crystals. Roč. 9, č. 11 (2019), č. článku 566. ISSN 2073-4352. E-ISSN 2073-4352
R&D Projects: GA ČR(CZ) GA17-00355S
Institutional support: RVO:67985882
Keywords : Annealing * Nanorods * Preheating * Seed layer * Zinc oxide * Sol-gel
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 2.404, year: 2019
Method of publishing: Open access
https://www.mdpi.com/2073-4352/9/11/566
Permanent Link: http://hdl.handle.net/11104/0292134File Download Size Commentary Version Access UFE 0499951.pdf 3 7.8 MB Other require UFE 0499951.pdf 5 1 MB Other require - 6.0499943 - ÚFE 2019 RIV US eng J - Journal Article
Yatskiv, Roman - Grym, Jan
Influence of the Interaction Between Graphite and Polar Surfaces of ZnO on the Formation of Schottky Contact.
Journal of Electronic Materials. Roč. 47, č. 9 (2018), s. 5002-5006. ISSN 0361-5235. E-ISSN 1543-186X.
[17th Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP). Valladolid, 08.10.2018-12.10.2018]
R&D Projects: GA ČR(CZ) GA17-00546S; GA ČR(CZ) GA15-17044S
Institutional support: RVO:67985882
Keywords : metal-insulator-semiconductor * graphite-ZnO interfaces * Schottky contact
OECD category: Electrical and electronic engineering
Impact factor: 1.676, year: 2018
Permanent Link: http://hdl.handle.net/11104/0292125File Download Size Commentary Version Access UFE 0499943.pdf 1 318.1 KB Other require - 7.0499935 - ÚFE 2019 RIV US eng J - Journal Article
Tiagulskyi, Stanislav - Yatskiv, Roman - Grym, Jan
Electrical Characterization of Graphite/InP Schottky Diodes by I-V-T and C-V Methods.
Journal of Electronic Materials. Roč. 47, č. 9 (2018), s. 4950-4954. ISSN 0361-5235. E-ISSN 1543-186X.
[17th Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP). Valladolid, 08.10.2018-12.10.2018]
R&D Projects: GA ČR(CZ) GA17-00546S
Institutional support: RVO:67985882
Keywords : Carbon-based Schottky diodes * current–voltage measurements * capacitance–voltage measurements
OECD category: Electrical and electronic engineering
Impact factor: 1.676, year: 2018
Permanent Link: http://hdl.handle.net/11104/0292119File Download Size Commentary Version Access UFE 0499935.pdf 2 733.3 KB Other require - 8.0484810 - ÚFE 2019 RIV DE eng J - Journal Article
Yatskiv, Roman - Tiagulskyi, Stanislav - Grym, Jan - Černohorský, Ondřej
Electrical and Optical Properties of Rectifying ZnO Homojunctions Fabricated by Wet Chemistry Methods.
Physica Status Solidi A. Roč. 215, č. 2 (2018), č. článku 1700592. ISSN 1862-6300. E-ISSN 1862-6319
R&D Projects: GA ČR(CZ) GA17-00546S; GA ČR(CZ) GA15-17044S
Institutional support: RVO:67985882
Keywords : Rectifying ZnO homojunctions * Photoluminescence * N-type nanorods
OECD category: Electrical and electronic engineering
Impact factor: 1.606, year: 2018
Permanent Link: http://hdl.handle.net/11104/0279944File Download Size Commentary Version Access UFE 0484810.pdf 6 1.4 MB Other require - 9.0484796 - ÚFE 2018 RIV DE eng J - Journal Article
Yatskiv, Roman - Grym, Jan
Graphite/SiC junctions and their electrical characteristics.
Physica Status Solidi A. Roč. 214, č. 9 (2017), č. článku 1700143. ISSN 1862-6300. E-ISSN 1862-6319
R&D Projects: GA ČR(CZ) GA17-00546S
Institutional support: RVO:67985882
Keywords : Silicon carbide * Barrier homogeneities * Graphite
OECD category: Electrical and electronic engineering
Impact factor: 1.795, year: 2017
Permanent Link: http://hdl.handle.net/11104/0279938File Download Size Commentary Version Access UFE 0484796.pdf 4 681.7 KB Other require