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0519846 - FZÚ 2020 RIV cze P - Patent Document
Hospodková, Alice - Hubáček, Tomáš
Způsob výroby epitaxní struktury s InGaN kvantovými jamami.
[Method of producing an epitaxial structure with InGaN quantum wells.]
2019. Owner: Fyzikální ústav AV ČR, v. v. i. Date of the patent acceptance: 18.09.2019. Patent Number: 308024
R&D Projects: GA TA ČR TH02010580
Institutional support: RVO:68378271
Keywords : InGaN/GaN heterostructure * scintillators * detectors
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
https://isdv.upv.cz/doc/FullFiles/Patents/FullDocuments/308/308024.pdf
Permanent Link: http://hdl.handle.net/11104/0304831