Search results

  1. 1.
    0433914 - FZÚ 2015 CH eng A - Abstract
    Zíková, Markéta - Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří - Krčil, Pavel - Hulicius, Eduard - Komninou, Ph. - Kioseoglou, J.
    MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 µm.
    International Conference on Metalorganic Vapor Phase Epitaxy /17./. Lausanne: École Polytechnique Fédérale de Lausanne, 2014 - (Kapon, E.; Rudra, A.). s. 14-14
    [International Conference on Metalorganic Vapor Phase Epitaxy /17./. 13.07.2014-18.07.2014, Lausanne]
    R&D Projects: GA ČR GA13-15286S
    Institutional support: RVO:68378271
    Keywords : InAs quantum dots * GaAsSb layer * photocurrent * long emission wavelength * MOVPE
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Permanent Link: http://hdl.handle.net/11104/0238091
     
     
  2. 2.
    0433689 - FZÚ 2015 CH eng A - Abstract
    Morávek, P. - Pangrác, Jiří - Fulem, M. - Hulicius, Eduard - Růžička, K.
    Vapor pressures of (3-dimethylaminopropyl)dimethylindium, (t-butylimino)bis(diethylamino)tantalum cyclopentadienylide, and (t-butylimido)tris(ethylmethylamino)tantalum.
    International Conference on Metalorganic Vapor Phase Epitaxy /17./. Lausanne: École Polytechnique Fédérale de Lausanne, 2014 - (Kapon, E.; Rudra, A.). s. 7-7
    [International Conference on Metalorganic Vapor Phase Epitaxy /17./. 13.07.2014-18.07.2014, Lausanne]
    Institutional support: RVO:68378271
    Keywords : metalorganic vapor phase epitaxy * vapor pressure * static method * indium precursors * tantalum precursors
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Permanent Link: http://hdl.handle.net/11104/0237855
     
     
  3. 3.
    0433688 - FZÚ 2015 CH eng A - Abstract
    Hospodková, Alice - Pangrác, Jiří - Vyskočil, Jan - Zíková, Markéta - Oswald, Jiří - Komninou, Ph. - Hulicius, Eduard
    Growth of InAs/GaAs quantum dots covered by GaAsSb in multiple structures studied by reflectance anisotropy spectroscopy.
    International Conference on Metalorganic Vapor Phase Epitaxy /17./. Lausanne: École Polytechnique Fédérale de Lausanne, 2014 - (Kapon, E.; Rudra, A.). s. 14-14
    [International Conference on Metalorganic Vapor Phase Epitaxy /17./. 13.07.2014-18.07.2014, Lausanne]
    R&D Projects: GA ČR(CZ) GP14-21285P; GA ČR GA13-15286S
    Institutional support: RVO:68378271
    Keywords : metalorganic vapor phase epitaxy * InAs/GaAs quantum dots * GaAsSb strain reducing layer * reflectance anisotropy
    Subject RIV: BM - Solid Matter Physics ; Magnetism
    Permanent Link: http://hdl.handle.net/11104/0237854
     
     
  4. 4.
    0433687 - FZÚ 2015 CH eng A - Abstract
    Vyskočil, Jan - Gladkov, Petar - Petříček, Otto - Hospodková, Alice - Pangrác, Jiří
    Growth and properties of AIII BV QD structures for intermediate band solar cells.
    International Conference on Metalorganic Vapor Phase Epitaxy /17./. Lausanne: École Polytechnique Fédérale de Lausanne, 2014 - (Kapon, E.; Rudra, A.). s. 7-7
    [International Conference on Metalorganic Vapor Phase Epitaxy /17./. 13.07.2014-18.07.2014, Lausanne]
    R&D Projects: GA ČR(CZ) GP14-21285P
    Institutional support: RVO:68378271 ; RVO:67985882
    Keywords : metalorganic vapor phase epitaxy * InAs/GaAs quantum dots * GaAsSb strain reducing layer * solar cells
    Permanent Link: http://hdl.handle.net/11104/0237896
     
     


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