Search results
- 1.0433914 - FZÚ 2015 CH eng A - Abstract
Zíková, Markéta - Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří - Krčil, Pavel - Hulicius, Eduard - Komninou, Ph. - Kioseoglou, J.
MOVPE prepared InAs/GaAs quantum dots covered by GaAsSb layer with long wavelength emission at 1.8 µm.
International Conference on Metalorganic Vapor Phase Epitaxy /17./. Lausanne: École Polytechnique Fédérale de Lausanne, 2014 - (Kapon, E.; Rudra, A.). s. 14-14
[International Conference on Metalorganic Vapor Phase Epitaxy /17./. 13.07.2014-18.07.2014, Lausanne]
R&D Projects: GA ČR GA13-15286S
Institutional support: RVO:68378271
Keywords : InAs quantum dots * GaAsSb layer * photocurrent * long emission wavelength * MOVPE
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0238091 - 2.0433689 - FZÚ 2015 CH eng A - Abstract
Morávek, P. - Pangrác, Jiří - Fulem, M. - Hulicius, Eduard - Růžička, K.
Vapor pressures of (3-dimethylaminopropyl)dimethylindium, (t-butylimino)bis(diethylamino)tantalum cyclopentadienylide, and (t-butylimido)tris(ethylmethylamino)tantalum.
International Conference on Metalorganic Vapor Phase Epitaxy /17./. Lausanne: École Polytechnique Fédérale de Lausanne, 2014 - (Kapon, E.; Rudra, A.). s. 7-7
[International Conference on Metalorganic Vapor Phase Epitaxy /17./. 13.07.2014-18.07.2014, Lausanne]
Institutional support: RVO:68378271
Keywords : metalorganic vapor phase epitaxy * vapor pressure * static method * indium precursors * tantalum precursors
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0237855 - 3.0433688 - FZÚ 2015 CH eng A - Abstract
Hospodková, Alice - Pangrác, Jiří - Vyskočil, Jan - Zíková, Markéta - Oswald, Jiří - Komninou, Ph. - Hulicius, Eduard
Growth of InAs/GaAs quantum dots covered by GaAsSb in multiple structures studied by reflectance anisotropy spectroscopy.
International Conference on Metalorganic Vapor Phase Epitaxy /17./. Lausanne: École Polytechnique Fédérale de Lausanne, 2014 - (Kapon, E.; Rudra, A.). s. 14-14
[International Conference on Metalorganic Vapor Phase Epitaxy /17./. 13.07.2014-18.07.2014, Lausanne]
R&D Projects: GA ČR(CZ) GP14-21285P; GA ČR GA13-15286S
Institutional support: RVO:68378271
Keywords : metalorganic vapor phase epitaxy * InAs/GaAs quantum dots * GaAsSb strain reducing layer * reflectance anisotropy
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0237854 - 4.0433687 - FZÚ 2015 CH eng A - Abstract
Vyskočil, Jan - Gladkov, Petar - Petříček, Otto - Hospodková, Alice - Pangrác, Jiří
Growth and properties of AIII BV QD structures for intermediate band solar cells.
International Conference on Metalorganic Vapor Phase Epitaxy /17./. Lausanne: École Polytechnique Fédérale de Lausanne, 2014 - (Kapon, E.; Rudra, A.). s. 7-7
[International Conference on Metalorganic Vapor Phase Epitaxy /17./. 13.07.2014-18.07.2014, Lausanne]
R&D Projects: GA ČR(CZ) GP14-21285P
Institutional support: RVO:68378271 ; RVO:67985882
Keywords : metalorganic vapor phase epitaxy * InAs/GaAs quantum dots * GaAsSb strain reducing layer * solar cells
Permanent Link: http://hdl.handle.net/11104/0237896