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- 1.0485615 - FZÚ 2018 RIV US eng C - Conference Paper (international conference)
Supplie, O. - Brückner, S. - Romanyuk, Olexandr - May, M.M. - Döscher, H. - Kleinschmidt, P. - Stange, A. - Dobrich, A. - Höhn, C. - Lewerenz, H.J. - Grosse, F. - Hannappel, T.
An experimental-theoretical atomic-scale study–In situ analysis of III-Von Si(100) growth for hybrid solar cells.
IEEE Photovoltaic Specialist Conference (PVSC) /40./. New York: IEEE, 2014, s. 2797-2799. ISBN 978-1-4799-4398-2. ISSN 0160-8371.
[40th IEEE Photovoltaic Specialists Conference (PVSC). Denver (US), 08.06.2014-13.06.2014]
Institutional support: RVO:68378271
Keywords : III-V-on-silicon * in situ * MOVPE / MOCVD * interfaces
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
http://ieeexplore.ieee.org/document/6925510/?arnumber=6925510&abstractAccess=no&userType=inst
Permanent Link: http://hdl.handle.net/11104/0280620