Search results
- 1.0505794 - FZÚ 2020 RIV NL eng J - Journal Article
Dominec, Filip - Hospodková, Alice - Hubáček, Tomáš - Zíková, Markéta - Pangrác, Jiří - Kuldová, Karla - Vetushka, Aliaksi - Hulicius, Eduard
Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties.
Journal of Crystal Growth. Roč. 507, Feb (2019), s. 246-250. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA MŠMT(CZ) LO1603; GA ČR GA16-15569S
EU Projects: European Commission(XE) 690599 - ASCIMAT
Institutional support: RVO:68378271
Keywords : low dimensional structures * V-pits * metalorganic vapor phase epitaxy * InGaN/GaN quantum wells * GaN buffer layer * scintillators
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.632, year: 2019
Method of publishing: Limited access
https://doi.org/10.1016/j.jcrysgro.2018.11.025
Permanent Link: http://hdl.handle.net/11104/0297183File Download Size Commentary Version Access 0505794.pdf 5 1.1 MB Author’s postprint open-access - 2.0502838 - FZÚ 2019 RIV NL eng J - Journal Article
Hubáček, Tomáš - Hospodková, Alice - Oswald, Jiří - Kuldová, Karla - Pangrác, Jiří - Zíková, Markéta - Hájek, František - Dominec, Filip - Florini, N. - Komninou, Ph. - Ledoux, G. - Dujardin, C.
Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface.
Journal of Crystal Growth. Roč. 507, Feb (2019), s. 310-315. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA MŠMT LM2015087; GA ČR(CZ) GA16-11769S; GA MŠMT(CZ) LO1603
EU Projects: European Commission(XE) 690599 - ASCIMAT
Institutional support: RVO:68378271
Keywords : interfaces * MOVPE * quantum wells * nitrides * scintillators
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.632, year: 2019
Method of publishing: Open access with time embargo
Permanent Link: http://hdl.handle.net/11104/0294724File Download Size Commentary Version Access 0502838.pdf 3 1.3 MB Author’s postprint open-access - 3.0502822 - FZÚ 2019 RIV NL eng J - Journal Article
Zíková, Markéta - Hospodková, Alice - Pangrác, Jiří - Hubáček, Tomáš - Oswald, Jiří - Kuldová, Karla - Hájek, František - Ledoux, G. - Dujardin, C.
Influence of Si doping of GaN layers surrounding InGaN quantum wells on structure photoluminescence properties.
Journal of Crystal Growth. Roč. 506, Jan (2019), s. 8-13. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA ČR(CZ) GA16-11769S; GA MŠMT(CZ) LO1603
EU Projects: European Commission(XE) 690599 - ASCIMAT
Institutional support: RVO:68378271
Keywords : low dimensional structures * MOVPE * InGaN/GaN quantum wells * luminescent defect band
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.632, year: 2019
Method of publishing: Open access with time embargo
Permanent Link: http://hdl.handle.net/11104/0294706File Download Size Commentary Version Access 0502822.pdf 4 1.5 MB Author’s postprint open-access - 4.0495805 - FZÚ 2019 RIV DE eng J - Journal Article
Rettig, O. - Scholz, J.P. - Steiger, N. - Bauer, S. - Hubáček, Tomáš - Zíková, Markéta - Li, Y. - Qi, H. - Biskupek, J. - Kaiser, U. - Thonke, K. - Scholz, F.
Investigation of Boron containing AlN and AlGaN layers grown by MOVPE.
Physica Status Solidi B. Roč. 255, č. 5 (2018), s. 1-9, č. článku 1700510. ISSN 0370-1972. E-ISSN 1521-3951
Institutional support: RVO:68378271
Keywords : boron nitrides * AIBN * AIBGaN * TEM * XRD * heterostructure
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.454, year: 2018
Permanent Link: http://hdl.handle.net/11104/0289786 - 5.0484348 - FZÚ 2018 RIV GB eng J - Journal Article
Hospodková, Alice - Vyskočil, Jan - Zíková, Markéta - Oswald, Jiří - Pangrác, Jiří - Petříček, Otto
GaAsSb-capped InAs QD type-II solar cell structures improvement by composition profiling of layers surrounding QD.
Materials Research Express. Roč. 4, č. 2 (2017), s. 1-8, č. článku 025502. E-ISSN 2053-1591
R&D Projects: GA ČR(CZ) GP14-21285P; GA MŠMT(CZ) LO1603
Institutional support: RVO:68378271
Keywords : GaAsSb * InAs * InGaAs * quantum dot * solar cells * MOVPE
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.151, year: 2017
Permanent Link: http://hdl.handle.net/11104/0279501 - 6.0476198 - FZÚ 2018 RIV US eng J - Journal Article
Hospodková, Alice - Oswald, Jiří - Zíková, Markéta - Pangrác, Jiří - Kuldová, Karla - Blažek, K. - Ledoux, G. - Dujardin, C. - Nikl, Martin
On the correlations between the excitonic luminescence efficiency and the QW numbers in multiple InGaN/GaN QW structure.
Journal of Applied Physics. Roč. 121, č. 21 (2017), 1-8, č. článku 214505. ISSN 0021-8979. E-ISSN 1089-7550
R&D Projects: GA MŠMT LO1603; GA ČR GA16-15569S
EU Projects: European Commission(XE) CZ.2.16/3.1.00/24510; European Commission(XE) 690599 - ASCIMAT
Institutional support: RVO:68378271
Keywords : InGaN/GaN heterostructure * scintillators * photoluminescence * cathodoluminescence
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 2.176, year: 2017
Permanent Link: http://hdl.handle.net/11104/0272721File Download Size Commentary Version Access 0476198.pdf 6 1.9 MB Publisher’s postprint open-access - 7.0474050 - FZÚ 2018 RIV NL eng J - Journal Article
Vyskočil, Jan - Hospodková, Alice - Petříček, Otto - Pangrác, Jiří - Zíková, Markéta - Oswald, Jiří - Vetushka, Aliaksi
GaAsSb/InAs/(In)GaAs type II quantum dots for solar cell applications.
Journal of Crystal Growth. Roč. 464, Apr (2017), s. 64-68. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA ČR(CZ) GP14-21285P; GA MŠMT LO1603
Institutional support: RVO:68378271
Keywords : InAs * GaAsSb * InGaAs * quantum dot * solar cells
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.742, year: 2017
Permanent Link: http://hdl.handle.net/11104/0271148 - 8.0474047 - FZÚ 2018 RIV NL eng J - Journal Article
Zíková, Markéta - Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří - Hulicius, Eduard
Comparison of MOVPE grown GaAs, InGaAs and GaAsSb covering layers for different InAs/GaAs quantum dot applications.
Journal of Crystal Growth. Roč. 464, Apr (2017), s. 59-63. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA MŠMT LO1603
Institutional support: RVO:68378271
Keywords : MOVPE * quantum dot * strain reducing layer * InAs * GaAsSb * InGaAs
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Impact factor: 1.742, year: 2017
Permanent Link: http://hdl.handle.net/11104/0271146 - 9.0469042 - FZÚ 2017 RIV US eng J - Journal Article
Mikhailova, M. P. - Veinger, A.I. - Kochman, I.V. - Semenikhin, P.V. - Kalinina, K.V. - Parfeniev, R.V. - Berezovets, V.A. - Safonchik, M.O. - Hospodková, Alice - Pangrác, Jiří - Zíková, Markéta - Hulicius, Eduard
Microwave radiation absorption and Shubnikov-de Haas oscillations in semimetal InAs/GaSb/AlSb composite quantum wells.
Journal of Nanophotonics. Roč. 10, č. 4 (2016), 1-8, č. článku 046013. ISSN 1934-2608
R&D Projects: GA ČR GA13-15286S; GA MŠMT LO1603
Institutional support: RVO:68378271
Keywords : Shubnikov-de Haas oscillations * microwave absorption * electron-paramagnetic resonance * composite quantum wells * InAs/GaSb/AlSb * MOVPE
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.325, year: 2016
Permanent Link: http://hdl.handle.net/11104/0266941 - 10.0459032 - FZÚ 2017 RIV US eng J - Journal Article
Klenovský, P. - Hemzal, D. - Steindl, P. - Zíková, Markéta - Křápek, V. - Humlíček, J.
Polarization anisotropy of the emission from type-II quantum dots.
Physical Review. B. Roč. 92, č. 24 (2015), 1-5, č. článku 241302. ISSN 1098-0121
Institutional support: RVO:68378271
Keywords : quantum dot * type II heterostructure * polarization anisotropy * III-V semiconductors
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 3.736, year: 2014
Permanent Link: http://hdl.handle.net/11104/0259302