Search results
- 1.0428559 - ÚFE 2015 RIV GB eng J - Journal Article
Yatskiv, Roman - Grym, Jan - Brus, V.V. - Černohorský, Ondřej - Maryanchuk, P.D. - Bazioti, C. - Dimitrakopulos, G.P. - Komninou, Ph.
Transport properties of metal-semiconductor junctions on n-type InP prepared by electrophoretic deposition of Pt nanoparticles.
Semiconductor Science and Technology. Roč. 29, č. 4 (2014), Article number 045017. ISSN 0268-1242. E-ISSN 1361-6641
R&D Projects: GA MŠMT LD12014
Institutional support: RVO:67985882
Keywords : electrophoretic deposition * Pt nanoparticles * Schottky diodes
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 2.190, year: 2014
Permanent Link: http://hdl.handle.net/11104/0233890File Download Size Commentary Version Access UFE 0428559.pdf 8 996 KB Other require - 2.0421941 - ÚFE 2014 RIV GB eng J - Journal Article
Kosyachenko, L.A. - Yatskiv, Roman - Yurtsenyuk, N.S. - Maslyanchuk, O.L. - Grym, Jan
Graphite/CdMnTe Schottky diodes and their electrical characteristics.
Semiconductor Science and Technology. Roč. 29, č. 1 (2014), 015006. ISSN 0268-1242. E-ISSN 1361-6641
R&D Projects: GA MŠMT LD12014
Institutional support: RVO:67985882
Keywords : gamma-rey detectors * growth * recombination
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 2.190, year: 2014
Permanent Link: http://hdl.handle.net/11104/0228209File Download Size Commentary Version Access UFE 0421941.pdf 22 527 KB Other require - 3.0395141 - ÚFE 2014 RIV GB eng J - Journal Article
Grym, Jan - Yatskiv, Roman
Schottky barriers based on metal nanoparticles deposited on InP epitaxial layers.
Semiconductor Science and Technology. Roč. 28, č. 4 (2013). ISSN 0268-1242. E-ISSN 1361-6641
R&D Projects: GA MŠMT LD12014
Institutional support: RVO:67985882
Keywords : Colloidal graphite * Epitaxial growth * Schottky barrier diodes
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 2.206, year: 2013
Permanent Link: http://hdl.handle.net/11104/0223262 - 4.0395132 - ÚFE 2014 RIV GB eng J - Journal Article
Yatskiv, Roman - Grym, Jan
Thermal stability study of semimetal graphite n-InP and n-GaN Schottky diodes.
Semiconductor Science and Technology. Roč. 28, č. 5 (2013). ISSN 0268-1242. E-ISSN 1361-6641
R&D Projects: GA MŠMT LD12014
Institutional support: RVO:67985882
Keywords : Gallium nitride * Schottky barrier diodes * Graphite
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 2.206, year: 2013
Permanent Link: http://hdl.handle.net/11104/0223260File Download Size Commentary Version Access UFE 0395132.pdf 12 508.5 KB Other require - 5.0387288 - ÚFE 2013 RIV US eng J - Journal Article
Yatskiv, Roman - Grym, Jan
Temperature-dependent properties of semimetal graphite-ZnO Schottky diodes.
Applied Physics Letters. Roč. 101, č. 16 (2012), s. 1621061-1621063. ISSN 0003-6951. E-ISSN 1077-3118
R&D Projects: GA MŠMT(CZ) OC10021; GA MŠMT LD12014
Institutional support: RVO:67985882
Keywords : Schottky diodes * ZnO * Richardson constant
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 3.794, year: 2012
Permanent Link: http://hdl.handle.net/11104/0220244File Download Size Commentary Version Access UFE 0387288.pdf 6 230.9 KB Other require - 6.0387285 - ÚFE 2013 RIV GB eng J - Journal Article
Yatskiv, Roman - Grym, Jan
Particle detectors based on InP Schottky diodes.
Journal of Instrumentation. Roč. 10, č. 7 (2012), C100051-C100055. ISSN 1748-0221. E-ISSN 1748-0221
R&D Projects: GA MŠMT(CZ) OC10021; GA MŠMT LD12014
Institutional support: RVO:67985882
Keywords : Particle detector * High purity InP layer * Schottky diode
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 1.656, year: 2012
Permanent Link: http://hdl.handle.net/11104/0220242