Search results
- 1.0431319 - FZÚ 2015 RIV NL eng J - Journal Article
Dimitrakopulos, G.P. - Bazioti, C. - Grym, Jan - Gladkov, Petar - Hulicius, Eduard - Pangrác, Jiří - Pacherová, Oliva - Komninou, Ph.
Misfit dislocation reduction in InGaAs epilayers grown on porous GaAs substrates.
Applied Surface Science. Roč. 306, Jul (2014), s. 89-93. ISSN 0169-4332. E-ISSN 1873-5584
R&D Projects: GA MŠMT 7AMB12GR034
Institutional support: RVO:68378271 ; RVO:67985882
Keywords : compound semiconductors * InGaAs * porous substrate * misfit dislocations * strain
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 2.711, year: 2014
Permanent Link: http://hdl.handle.net/11104/0235904File Download Size Commentary Version Access UFE 0431319.pdf 7 1.5 MB Other require - 2.0431316 - FZÚ 2015 RIV NL eng J - Journal Article
Hospodková, Alice - Pangrác, Jiří - Zíková, Markéta - Oswald, Jiří - Vyskočil, Jan - Komninou, Ph. - Kioseoglou, J. - Florini, N. - Hulicius, Eduard
Effect of the lower and upper interfaces on the quality of InAs/GaAs quantum dots.
Applied Surface Science. Roč. 301, SI (2014), 173-177. ISSN 0169-4332. E-ISSN 1873-5584
R&D Projects: GA ČR GA13-15286S; GA MŠMT(CZ) LM2011026; GA MŠMT 7AMB12GR034
Institutional support: RVO:68378271
Keywords : quantum dots * InAs * GaAs * GaAsSb * reflectance anisotropy spectroscopy
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 2.711, year: 2014
Permanent Link: http://hdl.handle.net/11104/0235894 - 3.0428421 - ÚFE 2015 RIV NL eng J - Journal Article
Komninou, Ph. - Gladkov, Petar - Karakostas, Th. - Pangrác, Jiří - Pacherová, Oliva - Vaniš, Jan - Hulicius, Eduard
Structural and photoluminescent properties of low temperature InAs buffer layer grown by MOVPE on GaAs substrates.
Journal of Crystal Growth. -, č. 396 (2014), s. 54-60. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA MŠMT 7AMB12GR034; GA ČR GA13-15286S
Institutional support: RVO:67985882 ; RVO:68378271
Keywords : Structuralproperties * MOVPE * PLcharacterization
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering; BM - Solid Matter Physics ; Magnetism (FZU-D)
Impact factor: 1.698, year: 2014
Permanent Link: http://hdl.handle.net/11104/0233786File Download Size Commentary Version Access UFE 0428421.pdf 9 1.7 MB Other require - 4.0399146 - FZÚ 2014 RIV US eng J - Journal Article
Hospodková, Alice - Oswald, Jiří - Pangrác, Jiří - Zíková, Markéta - Kubištová, Jana - Komninou, Ph. - Kioseoglou, J. - Kuldová, Karla - Hulicius, Eduard
Combined vertically correlated InAs and GaAsSb quantum dots separated by triangular GaAsSb barrier.
Journal of Applied Physics. Roč. 114, č. 17 (2013), "174305-1"-"174305-5". ISSN 0021-8979. E-ISSN 1089-7550
R&D Projects: GA ČR GA13-15286S; GA MŠMT 7AMB12GR034; GA MŠMT(CZ) LM2011026
Institutional support: RVO:68378271
Keywords : quantum dots * metal-organic vapor phase epitaxy * InAs * GaAs * GaAsSb
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 2.185, year: 2013
Permanent Link: http://hdl.handle.net/11104/0226500