0396817 - ÚFE 2014 RIV US eng C - Conference Paper (international conference)
Grym, Jan - Nohavica, Dušan - Gladkov, Petar - Vaniš, Jan - Hulicius, Eduard - Pangrác, Jiří - Pacherová, Oliva - Piksová, K.Strain accommodation within porous buffer layers in heteroepitaxial growth.
ASDAM 2012 - Conference Proceedings: The 9th International Conference on Advanced Semiconductor Devices and Microsystems. New York: IEEE, 2012 - (Hascik, S.; Osvald, J.), s. 235-238. ISBN 978-1-4673-1197-7.
[9th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM). Smolenice Castle (SK), 11.11.2012-15.11.2012]
R&D Projects: GA MŠMT 7AMB12GR034; GA ČR GAP108/10/0253
Institutional support: RVO:67985882 ; RVO:68378271
Keywords : Epitaxial growth * Gaas * Porous substrates
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering; JA - Electronics ; Optoelectronics, Electrical Engineering (FZU-D)
Permanent Link: http://hdl.handle.net/11104/0224518
