0477154 - FZÚ 2018 RIV US eng C - Conference Paper (international conference)
Hospodková, Alice - Pangrác, Jiří - Kuldová, Karla - Nikl, Martin - Pacherová, Oliva - Oswald, Jiří - Hubáček, Tomáš - Zíková, Markéta - Brůža, P. - Pánek, D. - Blažek, K. - Ledoux, G. - Dujardin, C. - Heuken, M. - Hulicius, EduardDevices based on InGaN/GaN multiple quantum well for scintillator and detector applications.
Fourth Conference on Sensors, MEMS, and Electro-Optic Systems. Bellingham: SPIE, 2017 - (du Plessis, M.), s. 1-15, č. článku 1003617. Proceedings of SPIE, 10036. ISBN 978-151060513-8. ISSN 0277-786X.
[South African Conference on Sensors, MEMS and Electro-Optical Systems (SMEOS) /4./. Skukuza (ZA), 18.09.2016-20.09.2016]
R&D Projects: GA MŠMT LM2015087; GA MŠMT LO1603; GA ČR GA16-15569S
EU Projects: European Commission(XE) CZ.2.16/3.1.00/24510; European Commission(XE) 690599 - ASCIMAT
Institutional support: RVO:68378271
Keywords : gallium nitride * indium gallium nitride * quantum wells * scintillators * sensors * luminescence * excitons * scintillation * radiation * resistance
OECD category: Condensed matter physics (including formerly solid state physics, supercond.)
Permanent Link: http://hdl.handle.net/11104/0273529
