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- 1.0440959 - FZÚ 2015 RIV SK eng C - Conference Paper (international conference)
Náhlík, J. - Šobáň, Zbyněk - Voves, J. - Jurka, Vlastimil - Vašek, Petr
SiC graphene FET with polydimethylglutharimide as a gate dielectric layer.
ASDAM 2014- Conference Proceedings: The 10th International Conference on Advanced Semiconductor Devices and Microsystems. Bratislava: Slovak University of Technology, 2014 - (Breza, J.; Donoval, D.; Vavrinsky, E.), s. 33-36. ISBN 978-1-4799-5474-2.
[International Conference on Advanced Semiconductor Devices and Microsystems /10./. Smolenice (SK), 20.10.2014-22.10.2014]
R&D Projects: GA ČR(CZ) GAP108/11/0894
Institutional support: RVO:68378271
Keywords : FET * SiC * graphene
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0244030