Search results
- 1.0396713 - ÚFE 2014 RIV FR eng J - Journal Article
Grym, Jan - Nohavica, Dušan - Gladkov, Petar - Hulicius, Eduard - Pangrác, Jiří - Piksová, K.
Epitaxial growth on porous GaAs substrates.
Comptes Rendus Chimie. Roč. 16, č. 1 (2013), s. 59-64. ISSN 1631-0748. E-ISSN 1878-1543
R&D Projects: GA ČR GAP102/10/1201; GA ČR GAP108/10/0253
Institutional support: RVO:67985882 ; RVO:68378271
Keywords : Electrochemical etching * Porous semiconductors * Epitaxial growth * GaAs
Subject RIV: BH - Optics, Masers, Lasers; JA - Electronics ; Optoelectronics, Electrical Engineering (FZU-D)
Impact factor: 1.483, year: 2013
Permanent Link: http://hdl.handle.net/11104/0224448 - 2.0387856 - ÚFE 2013 RIV GB eng J - Journal Article
Nohavica, Dušan - Grym, Jan - Gladkov, Petar - Hulicius, Eduard - Pangrác, Jiří - Jarchovský, Zdeněk
Thermal conversion and epitaxial overgrowth of nanopores etched in InP and GaAs.
International Journal of Nanotechnology. Roč. 9, 8-9 (2012), s. 732-745. ISSN 1475-7435. E-ISSN 1741-8151
R&D Projects: GA ČR GAP108/10/0253
Institutional support: RVO:67985882 ; RVO:68378271
Keywords : growth * nanoporus
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering; BM - Solid Matter Physics ; Magnetism (FZU-D)
Impact factor: 1.087, year: 2012
Permanent Link: http://hdl.handle.net/11104/0216887 - 3.0387641 - ÚFE 2013 RIV DE eng J - Journal Article
Grym, Jan - Nohavica, Dušan - Vaniš, Jan - Piksová, K.
Preparation of nanoporous GaAs substrates for epitaxial growth.
Physica Status Solidi C. Roč. 9, č. 7 (2012), s. 1531-1533. ISSN 1862-6351.
[16th International Semiconducting and Insulating Materials Conference (SIMC-XVI). Stockholm, 19.06.2011-23.06.2011]
R&D Projects: GA ČR GAP108/10/0253
Institutional support: RVO:67985882
Keywords : semiconductor technology * porous semiconductors * epitaxial growth
Subject RIV: JJ - Other Materials
Permanent Link: http://hdl.handle.net/11104/0220314 - 4.0368042 - ÚFE 2012 RIV NL eng J - Journal Article
Nohavica, Dušan - Gladkov, Petar - Grym, Jan - Jarchovský, Zdeněk
Laser assisted electrochemical preparation of micro and nanopores in GaxIn1-xP.
Journal of Nanoparticle Research. Roč. 13, č. 11 (2011), s. 5873-5877. ISSN 1388-0764. E-ISSN 1572-896X
R&D Projects: GA ČR GAP108/10/0253
Institutional research plan: CEZ:AV0Z20670512
Keywords : Anodizace * GaInP * Nanopory
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 3.287, year: 2011
Permanent Link: http://hdl.handle.net/11104/0202513 - 5.0359526 - FZÚ 2012 RIV NL eng J - Journal Article
Hospodková, Alice - Pangrác, Jiří - Vyskočil, Jan - Oswald, Jiří - Vetushka, Aliaksi - Caha, O. - Hazdra, P. - Kuldová, Karla - Hulicius, Eduard
InAs/GaAs quantum dot capping in kinetically limited MOVPE growth regime.
Journal of Crystal Growth. Roč. 317, č. 1 (2011), s. 39-42. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA ČR GAP102/10/1201; GA ČR GAP108/10/0253; GA MŠMT LC510; GA ČR GA202/09/0676
Institutional research plan: CEZ:AV0Z10100521
Keywords : low dimensional structures * photoluminescence * low-pressure MOVPE * InAs/GaAs quantum dots * semiconducting III–V materials
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.726, year: 2011
Permanent Link: http://hdl.handle.net/11104/0197302