Search results
- 1.0396817 - ÚFE 2014 RIV US eng C - Conference Paper (international conference)
Grym, Jan - Nohavica, Dušan - Gladkov, Petar - Vaniš, Jan - Hulicius, Eduard - Pangrác, Jiří - Pacherová, Oliva - Piksová, K.
Strain accommodation within porous buffer layers in heteroepitaxial growth.
ASDAM 2012 - Conference Proceedings: The 9th International Conference on Advanced Semiconductor Devices and Microsystems. New York: IEEE, 2012 - (Hascik, S.; Osvald, J.), s. 235-238. ISBN 978-1-4673-1197-7.
[9th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM). Smolenice Castle (SK), 11.11.2012-15.11.2012]
R&D Projects: GA MŠMT 7AMB12GR034; GA ČR GAP108/10/0253
Institutional support: RVO:67985882 ; RVO:68378271
Keywords : Epitaxial growth * Gaas * Porous substrates
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering; JA - Electronics ; Optoelectronics, Electrical Engineering (FZU-D)
Permanent Link: http://hdl.handle.net/11104/0224518 - 2.0387722 - ÚFE 2013 RIV CZ eng C - Conference Paper (international conference)
Nohavica, Dušan - Grym, Jan - Gladkov, Petar - Hamplová, Marie
LOW SUPERSATURATION OVERGROWTH OF NANOPOROUS GaAs SUBSTRATES.
NANOCON 2012, 4th International Conference Proceedings. Ostrava: TANGER Ltd, 2012. ISBN 978-80-87294-32-1.
[NANOCON 2012. International Conference /4./. Brno (CZ), 23.10.2012-25.10.2012]
R&D Projects: GA ČR GAP108/10/0253
Institutional support: RVO:67985882
Keywords : Porous III-V semiconductors * Electrochemical etching * Pores conversion
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0216684 - 3.0374726 - ÚFE 2012 PL eng C - Conference Paper (international conference)
Nohavica, Dušan - Grym, Jan - Gladkov, Petar - Hulicius, Eduard - Pangrác, Jiří
III-V semiconductors grown on porous substrates.
EWMOVPE XIV-European Workshop on Metalorganic Vapor Phase Epitaxy. Wroclaw: Technická univerzita, 2011 - (Pražmowska, J.), s. 71-74. ISBN 978-83-7493-599-9.
[European Workshop on Metalorganic Vapor Phase Epitaxy /14./. Wrocław (PL), 05.06.2011-08.06.2011]
R&D Projects: GA ČR GAP108/10/0253
Institutional research plan: CEZ:AV0Z20670512; CEZ:AV0Z10100521
Keywords : porous semiconductors * heterotransitions * electrochemical etching of metals
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0006909 - 4.0374724 - ÚFE 2013 RIV CZ eng C - Conference Paper (international conference)
Nohavica, Dušan - Grym, Jan - Gladkov, Petar - Hulicius, Eduard - Pangrác, Jiří
Applications of porous III-V semiconductors in heteroepitaxial growth and in preparation of nanocomposite structures.
NANOCON 2011, Conference Proceedings, 3 rd International Conference. Brno: TANGER Ltd., Ostrava, 2011, s. 150-154. ISBN 978-80-87294-27-7.
[NANOCON 2011. International Conference /3./. Brno (CZ), 21.09.2011-23.09.2011]
R&D Projects: GA ČR GAP108/10/0253
Institutional research plan: CEZ:AV0Z20670512; CEZ:AV0Z10100521
Keywords : porous semiconductors * heterotransitions * electrochemical etching of metals
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0216241 - 5.0372415 - FZÚ 2012 DE eng C - Conference Paper (international conference)
Grym, Jan - Nohavica, Dušan - Gladkov, Petar - Hulicius, Eduard - Pangrác, Jiří
Mid-infrared light emitting diodes and high-speed photodiodes based on type II heterostructures with deep AlSb/InAsSb/AlSb quantum wells in an active region.
Compound Semiconductor Week. 38th International Symposium on Compound Semiconductors - ISCS 2011. Berlin: N, 2011, s. 62-63. ISBN N.
[International Symposium on Compound Semiconductors/38./ - ISCS-2011. Berlin (DE), 22.05.2011-26.05.2011]
R&D Projects: GA ČR GAP108/10/0253
Institutional research plan: CEZ:AV0Z20670512; CEZ:AV0Z10100521
Keywords : porous structures * epitaxial growth * nanopores
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0205738