Search results
- 1.0376501 - ÚFE 2013 CZ eng A - Abstract
Grym, Jan - Nohavica, Dušan - Jarchovský, Zdeněk - Piksová, K.
Electron Microscopy of Porous Semiconductors.
Mikroskopie 2011. Praha: Československá mikroskopická společnost, 2011 - (Frank, L.; Hozák, P.). s. 44-44
[Mikroskopie 2011. 17.02.2011-18.02.2011, Nové Město na Moravě]
R&D Projects: GA ČR GAP108/10/0253
Institutional research plan: CEZ:AV0Z20670512
Keywords : electron microscopy * porous semiconductors * semiconductor technology
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Permanent Link: http://hdl.handle.net/11104/0208882 - 2.0373132 - FZÚ 2012 US eng A - Abstract
Hospodková, Alice - Pangrác, Jiří - Vyskočil, Jan - Oswald, Jiří - Hazdra, P. - Kuldová, Karla - Hulicius, Eduard - Caha, O.
InAs/GaAs QD capping in kinetically or diffusion limited growth regime.
IC-MOVPE XV. Warrendale: TMS, 2010. s. 44.
[International Metal Organic Vapor Phase Epitaxy Conference /15./. 23.05.2010-28.05.2010, Hyatt Regency Lake Tahoe]
R&D Projects: GA ČR GAP102/10/1201; GA ČR GAP108/10/0253; GA MŠMT LC510; GA ČR GA202/09/0676
Institutional research plan: CEZ:AV0Z10100521
Keywords : InAs/GaAs quantum dot * MOVPE
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0206287 - 3.0371049 - FZÚ 2012 CZ eng A - Abstract
Hulicius, Eduard - Hospodková, Alice - Pangrác, Jiří - Ziková, M. - Vyskočil, Jan - Oswald, Jiří - Kuldová, Karla
Controlling of MOVPE InAs/GaAs quantum dot properties for device application.
NANOCON 2011. Conference Proceedings. Ostrava: Tanger Ltd, 2011. s. 23. ISBN 978-80-87294-23-9.
[NANOCON 2011. International Conference /3./. 21.09.2011-23.09.2011, Brno]
R&D Projects: GA ČR GAP102/10/1201; GA ČR GAP108/10/0253; GA ČR GA202/09/0676
Institutional research plan: CEZ:AV0Z10100521
Keywords : InAs/GaAs quantum dots * M0VPE
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0204684