Search results
- 1.0396713 - ÚFE 2014 RIV FR eng J - Journal Article
Grym, Jan - Nohavica, Dušan - Gladkov, Petar - Hulicius, Eduard - Pangrác, Jiří - Piksová, K.
Epitaxial growth on porous GaAs substrates.
Comptes Rendus Chimie. Roč. 16, č. 1 (2013), s. 59-64. ISSN 1631-0748. E-ISSN 1878-1543
R&D Projects: GA ČR GAP102/10/1201; GA ČR GAP108/10/0253
Institutional support: RVO:67985882 ; RVO:68378271
Keywords : Electrochemical etching * Porous semiconductors * Epitaxial growth * GaAs
Subject RIV: BH - Optics, Masers, Lasers; JA - Electronics ; Optoelectronics, Electrical Engineering (FZU-D)
Impact factor: 1.483, year: 2013
Permanent Link: http://hdl.handle.net/11104/0224448 - 2.0396370 - FZÚ 2014 RIV CH eng J - Journal Article
Hazdra, P. - Oswald, Jiří - Hospodková, Alice - Hulicius, Eduard - Pangrác, Jiří
Light emitting diodes with InAs/GaAsSb self-assembled quantum dot layer embedded in GaAs.
Thin Solid Films. Roč. 543, Sept (2013), 83-87. ISSN 0040-6090. E-ISSN 1879-2731
R&D Projects: GA ČR GAP102/10/1201; GA ČR GA202/09/0676
Institutional research plan: CEZ:AV0Z10100521
Keywords : quantum dots * electroluminescence * metalorganic vapor phase epitaxy * InAs * GaAsSb * light emitting diodes
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.867, year: 2013
Permanent Link: http://hdl.handle.net/11104/0224172 - 3.0393323 - ÚFE 2014 RIV NL eng J - Journal Article
Walachová, Jarmila - Zelinka, Jiří - Leshkov, Sergey - Šroubek, Filip - Pangrác, Jiří - Vaniš, Jan
Integral and local density of states of InAs quantum dots in GaAs/AlGaAs heterostructure observed by ballistic electron emission spectroscopy near one-electron ground state.
Physica E: Low-Dimensional Systems and Nanostructures. Roč. 48, č. 1 (2013), s. 61-65. ISSN 1386-9477. E-ISSN 1873-1759
R&D Projects: GA ČR GPP102/11/P824; GA ČR GAP102/10/1201
Institutional research plan: CEZ:AV0Z10100521
Institutional support: RVO:67985882 ; RVO:68378271 ; RVO:67985556
Keywords : quantum dots * scanning tunneling microscopy * ballistic transport
Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering
Impact factor: 1.856, year: 2013
Permanent Link: http://hdl.handle.net/11104/0222094File Download Size Commentary Version Access UFE 0393323.pdf 9 825.8 KB Other require - 4.0392283 - FZÚ 2014 RIV NL eng J - Journal Article
Hospodková, Alice - Zíková, Markéta - Pangrác, Jiří - Oswald, Jiří - Kuldová, Karla - Vyskočil, Jan - Hulicius, Eduard
Graded GaAsSb strain reducing layers covering InAs/GaAs quantum dots.
Journal of Crystal Growth. Roč. 370, MAY (2013), s. 303-306. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA ČR GAP102/10/1201
Institutional research plan: CEZ:AV0Z10100521
Keywords : band alignment * photoluminescence * strain reducing layer * quantum dot * MOVPE * InAs/GaAs
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.693, year: 2013
Permanent Link: http://hdl.handle.net/11104/0221191 - 5.0391944 - FZÚ 2014 RIV GB eng J - Journal Article
Hospodková, Alice - Zíková, Markéta - Pangrác, Jiří - Oswald, Jiří - Kubištová, Jana - Kuldová, Karla - Hazdra, P. - Hulicius, Eduard
Type I - type II band alignment of GaAsSb/InAs/GaAs quantum dot heterostructure influenced by dot size and strain reducing layer composition.
Journal of Physics D-Applied Physics. Roč. 46, č. 9 (2013), "095103-1"-"095103-9". ISSN 0022-3727. E-ISSN 1361-6463
R&D Projects: GA ČR GAP102/10/1201; GA MŠMT(CZ) LM2011026
Institutional support: RVO:68378271
Keywords : quantum dot * band alignment * InAs/GaAs * GaAsSb * MOVPE
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 2.521, year: 2013
http://iopscience.iop.org/0022-3727/46/9/095103/
Permanent Link: http://hdl.handle.net/11104/0220900 - 6.0383781 - FZÚ 2013 RIV GB eng J - Journal Article
Kuldová, Karla - Molas, M. - Borysiuk, J. - Babinski, A. - Výborný, Zdeněk - Pangrác, Jiří - Oswald, Jiří
Quantum confinement in MOVPE-grown structures with self-assembled InAs/GaAs quantum dots.
Journal of Physics: Conference Series. Roč. 245, č. 1 (2010), s. 1-5. ISSN 1742-6588. E-ISSN 1742-6596.
[Conference on Quantum Dots 2010. Nottingham, 26.08.2010-30.08.2010]
R&D Projects: GA ČR GAP102/10/1201; GA ČR GA202/09/0676
Institutional research plan: CEZ:AV0Z10100521
Keywords : photoluminescence * InAs/GaAs * quantum dots
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0213619 - 7.0383779 - FZÚ 2013 RIV GB eng J - Journal Article
Oswald, Jiří - Hazdra, P. - Kuldová, Karla - Hospodková, Alice - Hulicius, Eduard - Pangrác, Jiří - Vyskočil, Jan
Electro- and photoluminescence of InAs/GaAs quantum dot structures.
Journal of Physics: Conference Series. Roč. 245, č. 1 (2010), s. 1-5. ISSN 1742-6588. E-ISSN 1742-6596.
[Conference on Quantum Dots 2010. Nottingham, 26.08.2010-30.08.2010]
R&D Projects: GA ČR GAP102/10/1201; GA ČR GA202/09/0676
Institutional research plan: CEZ:AV0Z10100521
Keywords : electroluminescence * photoluminescence * spectroscopy * InAs QDs
Subject RIV: BM - Solid Matter Physics ; Magnetism
Permanent Link: http://hdl.handle.net/11104/0213617 - 8.0383762 - FZÚ 2013 RIV US eng J - Journal Article
Mikhailova, M. P. - Ivanov, E.V. - Danilov, L.V. - Kalinina, K.V. - Stoyanov, N. D. - Zegrya, G.G. - Yakovlev, Yu. P. - Hulicius, Eduard - Hospodková, Alice - Pangrác, Jiří - Zíková, Markéta
Superlinear electroluminescence due to impact ionization in GaSb-based heterostructures with deep Al(As)Sb/InAsSb/Al(As)Sb quantum wells.
Journal of Applied Physics. Roč. 112, č. 2 (2012), "023108-1"-"023108-10". ISSN 0021-8979. E-ISSN 1089-7550
R&D Projects: GA ČR GAP102/10/1201
Institutional research plan: CEZ:AV0Z10100521
Keywords : Auger recombination * photoluminescence * InAs
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 2.210, year: 2012
Permanent Link: http://hdl.handle.net/11104/0213603 - 9.0371379 - FZÚ 2012 RIV NL eng J - Journal Article
Hospodková, Alice - Pangrác, Jiří - Oswald, Jiří - Hazdra, P. - Kuldová, Karla - Vyskočil, Jan - Hulicius, Eduard
Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures.
Journal of Crystal Growth. Roč. 315, č. 1 (2011), 110-113. ISSN 0022-0248. E-ISSN 1873-5002
R&D Projects: GA ČR GAP102/10/1201; GA MŠMT LC510; GA ČR GA202/09/0676
Institutional research plan: CEZ:AV0Z10100521
Keywords : low dimensional structures * photoluminescence * electroluminescence * low-pressure MOVPE * InAs/GaAs quantum dots * semiconducting III–V materials
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.726, year: 2011
Permanent Link: http://hdl.handle.net/11104/0204912 - 10.0367915 - FZÚ 2012 RIV US eng J - Journal Article
Hazdra, P. - Oswald, Jiří - Komarnitskyy, V. - Kuldová, Karla - Hospodková, Alice - Hulicius, Eduard - Pangrác, Jiří
Self-assembled InAs/GaAs quantum dots covered by different strain reducing layers exhibiting strong photo- and electroluminescence in 1.3 and 1.55 μm bands.
Journal of Nanoscience and Nanotechnology. Roč. 11, č. 8 (2011), s. 6804-6809. ISSN 1533-4880
R&D Projects: GA ČR GAP102/10/1201; GA ČR GA202/09/0676
Institutional research plan: CEZ:AV0Z10100521
Keywords : quantum dots * MOVPE * InAs * GaAs * photoluminescence * electroluminescence
Subject RIV: BM - Solid Matter Physics ; Magnetism
Impact factor: 1.563, year: 2011
Permanent Link: http://hdl.handle.net/11104/0202422